JP2012256916A - 複数領域のヒータを大気から隔離する方法 - Google Patents
複数領域のヒータを大気から隔離する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims abstract description 46
- 238000010438 heat treatment Methods 0.000 claims abstract description 44
- 239000011261 inert gas Substances 0.000 claims abstract description 24
- 238000010926 purge Methods 0.000 claims abstract description 21
- 238000013022 venting Methods 0.000 claims abstract description 5
- 238000007872 degassing Methods 0.000 claims abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 20
- 239000012530 fluid Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 41
- 239000007789 gas Substances 0.000 description 25
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000755 6061-T6 aluminium alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】ウェハを処理する方法であって、加熱ディスク116から基部まで広がり、加熱ディスクに接続された少なくとも一つの加熱エレメント112を囲んでいる内容積を有するヒータを含む反応チャンバ108内でウェハを処理するステップ、内容積は反応チャンバから内容積を隔離する密封を有し;ヒータで反応チャンバを加熱するステップ;ヒータ内容積の内部に不活性ガスをパージするステップ;内容積から反応チャンバの外側まで不活性ガスを排出するためヒータ内容積に接続されたガス抜きポートで不活性ガスをガス抜きするステップ;を含む、方法。
【選択図】図1
Description
この発明はプロセス チャンバ用の加熱機構に関し、特に化学的気相堆積チャンバ用の加熱機構に関する。
化学的気相堆積(CVD)は、基板上に各種の薄膜を堆積させるプロセスであり、個々の集積回路デバイスを形成するため、例えば半導体ウェハ(ウェハ)のプロセッシングのような、半導体ベースの集積回路の製造に広く使用されている。代表的なCVDプロセッシングにあっては、単一又は複数のウェハが堆積又は反応チャンバ内に置かれ、反応体ガスがチャンバ内に導入され、これが加熱面で分解し、反応して単一又は複数のウェハ上に薄膜を形成する。
本発明は、一般に半導体ウェハ処理反応チャンバに使用する複数抵抗型ヒータ(ヒータ)の内部から反応ガスを除去する方法と装置に関する。ウェハのプロセッシングには腐蝕性薬品を高温で使用する必要があり、この環境に耐えねばならないヒータ構成部品は現在、セラミック材である窒化アルミニウム(AlN)から製造される。
Claims (15)
- ウェハを処理する方法であって、
加熱ディスクから基部まで広がり、加熱ディスクに接続された少なくとも一つの加熱エレメントを囲んでいる内容積を有するヒータを含む反応チャンバ内でウェハを処理するステップ、内容積は反応チャンバから内容積を隔離する密封を有し;
ヒータで反応チャンバを加熱するステップ;
ヒータ内容積の内部に不活性ガスをパージするステップ;
内容積から反応チャンバの外側まで不活性ガスを排出するためヒータ内容積に接続されたガス抜きポートで不活性ガスをガス抜きするステップ;
を含む、方法。 - 不活性ガスが窒素であり、窒素が周囲温度における窒素ガスと液体窒素から蒸発する窒素ガスとの混合物である、請求項1に記載の方法。
- 20〜40psiの圧力範囲にある不活性ガスでパージする、請求項1に記載の方法。
- 50〜100ccmの流量範囲における不活性ガスでパージする、請求項1に記載の方法。
- 加熱ディスクから基部まで広がり、加熱ディスクに接続された少なくとも一つの加熱エレメントを囲んでいる内容積を有するヒータが内部に配されている反応チャンバと、内容積は反応チャンバから内容積を隔離する密封を有し;
反応チャンバの内部でヒータに接続されるウェハを支持する手段と;
ヒータの内容積を通って一定流量の不活性ガスを維持する手段と;
を含む、ウェハ処理装置。 - 更に、ヒータの内容積の内部に、ある圧力で不活性ガスを維持する手段を含む、請求項5に記載の装置。
- 更に、内容積から反応チャンバの外側まで不活性ガスを排出するためヒータ内容積に接続されたガス抜きポートを含む、請求項5に記載の装置。
- 更に、内容積に真空を適用する真空ポートを含む、請求項5に記載の装置。
- 更に、真空ポートに接続される真空源と並置された真空遮断弁を含む、請求項8に記載の装置。
- 内部にヒータを含有するウェハ反応チャンバを含み、該ヒータが、
反応チャンバの内部でウェハを支持するためヒータに接続される表面;
加熱ディスクから基部まで広がり、加熱ディスクに接続された少なくとも一つの加熱エレメントを囲んでいる内容積、内容積は反応チャンバから内容積を隔離する密封を有し;
内容積に亘る流体を流す流体入口ポート;
ヒータ内容積に接続され、内容積からウェハ反応チャンバの外側まで流体を排出するため配置される流体ガス抜きポート;
を有する、ウェハ処理装置。 - ヒータが更に、
複数のヒータ用ロッドに接続する一組の電気接続部;
流体入口ポート;
流体ガス抜きポート;
を有するコネクタアセンブリを含む、請求項10に記載の装置。 - 流体ガス抜きポートが緩やかな寸法公差により提供される、請求項11に記載の装置。
- 更に、内容積に真空を適用する真空ポートと;
真空ポートに接続される真空源と並置された真空遮断弁と;
を含む、請求項10に記載の装置。 - 更に、ヒータ内容積と並置された真空ゲージを備えた、請求項10に記載の装置。
- 更に、700℃より高い反応チャンバ温度で真空を適用する手段と;
真空をモニタする手段と;
真空を連続的に適用する手段と;
を含む、請求項13に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/611,942 | 2000-07-07 | ||
US09/611,942 US6652655B1 (en) | 2000-07-07 | 2000-07-07 | Method to isolate multi zone heater from atmosphere |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002508834A Division JP2004503107A (ja) | 2000-07-07 | 2001-06-22 | 複数領域のヒータを大気から隔離する方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012256916A true JP2012256916A (ja) | 2012-12-27 |
JP5597229B2 JP5597229B2 (ja) | 2014-10-01 |
Family
ID=24451025
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002508834A Withdrawn JP2004503107A (ja) | 2000-07-07 | 2001-06-22 | 複数領域のヒータを大気から隔離する方法 |
JP2012172047A Expired - Fee Related JP5597229B2 (ja) | 2000-07-07 | 2012-08-02 | ウェハを処理する方法、及び、ウェハ処理装置 |
Family Applications Before (1)
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JP2002508834A Withdrawn JP2004503107A (ja) | 2000-07-07 | 2001-06-22 | 複数領域のヒータを大気から隔離する方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6652655B1 (ja) |
EP (1) | EP1299573A2 (ja) |
JP (2) | JP2004503107A (ja) |
KR (1) | KR100820527B1 (ja) |
WO (1) | WO2002005321A2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6617553B2 (en) * | 1999-05-19 | 2003-09-09 | Applied Materials, Inc. | Multi-zone resistive heater |
DE10239083B4 (de) * | 2002-08-26 | 2009-09-03 | Schott Ag | Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung |
US7015426B2 (en) * | 2003-02-11 | 2006-03-21 | Genus, Inc. | Purged heater-susceptor for an ALD/CVD reactor |
US20080314320A1 (en) * | 2005-02-04 | 2008-12-25 | Component Re-Engineering Company, Inc. | Chamber Mount for High Temperature Application of AIN Heaters |
US8709162B2 (en) * | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
US7842135B2 (en) * | 2006-01-09 | 2010-11-30 | Aixtron Ag | Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire |
KR101560138B1 (ko) * | 2008-06-24 | 2015-10-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 저온 pecvd 애플리케이션을 위한 받침대 히터 |
US20100177454A1 (en) * | 2009-01-09 | 2010-07-15 | Component Re-Engineering Company, Inc. | Electrostatic chuck with dielectric inserts |
JP5570938B2 (ja) * | 2009-12-11 | 2014-08-13 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP6107327B2 (ja) * | 2013-03-29 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜装置及びガス供給装置並びに成膜方法 |
US20150194326A1 (en) * | 2014-01-07 | 2015-07-09 | Applied Materials, Inc. | Pecvd ceramic heater with wide range of operating temperatures |
US10497606B2 (en) * | 2015-02-09 | 2019-12-03 | Applied Materials, Inc. | Dual-zone heater for plasma processing |
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JPH03128668U (ja) * | 1990-04-06 | 1991-12-25 | ||
JPH0778766A (ja) * | 1993-06-24 | 1995-03-20 | Tokyo Electron Ltd | ガス処理装置 |
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DE1619998B2 (de) | 1967-04-07 | 1976-07-29 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum thermischen behandeln von scheibenfoermigen halbleiterkoerpern |
US4777022A (en) | 1984-08-28 | 1988-10-11 | Stephen I. Boldish | Epitaxial heater apparatus and process |
JPS63297567A (ja) * | 1987-05-28 | 1988-12-05 | Shimadzu Corp | プラズマcvd装置 |
US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
JPH01319930A (ja) * | 1988-06-21 | 1989-12-26 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
JPH0519949Y2 (ja) * | 1990-02-09 | 1993-05-25 | ||
US5091208A (en) * | 1990-03-05 | 1992-02-25 | Wayne State University | Novel susceptor for use in chemical vapor deposition apparatus and its method of use |
US5094885A (en) | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
TW221318B (ja) | 1990-07-31 | 1994-02-21 | Tokyo Electron Co Ltd | |
WO1997031389A1 (fr) * | 1996-02-23 | 1997-08-28 | Tokyo Electron Limited | Dispositif de traitement thermique |
US5994678A (en) | 1997-02-12 | 1999-11-30 | Applied Materials, Inc. | Apparatus for ceramic pedestal and metal shaft assembly |
US6372048B1 (en) * | 1997-06-09 | 2002-04-16 | Tokyo Electron Limited | Gas processing apparatus for object to be processed |
-
2000
- 2000-07-07 US US09/611,942 patent/US6652655B1/en not_active Expired - Fee Related
-
2001
- 2001-06-22 KR KR1020037000176A patent/KR100820527B1/ko active IP Right Grant
- 2001-06-22 WO PCT/US2001/020095 patent/WO2002005321A2/en active Application Filing
- 2001-06-22 JP JP2002508834A patent/JP2004503107A/ja not_active Withdrawn
- 2001-06-22 EP EP01948659A patent/EP1299573A2/en not_active Withdrawn
-
2012
- 2012-08-02 JP JP2012172047A patent/JP5597229B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03128668U (ja) * | 1990-04-06 | 1991-12-25 | ||
JPH0778766A (ja) * | 1993-06-24 | 1995-03-20 | Tokyo Electron Ltd | ガス処理装置 |
Also Published As
Publication number | Publication date |
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JP5597229B2 (ja) | 2014-10-01 |
JP2004503107A (ja) | 2004-01-29 |
EP1299573A2 (en) | 2003-04-09 |
US6652655B1 (en) | 2003-11-25 |
KR20030063335A (ko) | 2003-07-28 |
WO2002005321A2 (en) | 2002-01-17 |
WO2002005321A3 (en) | 2002-06-06 |
KR100820527B1 (ko) | 2008-04-07 |
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