JPH0312769B2 - - Google Patents

Info

Publication number
JPH0312769B2
JPH0312769B2 JP59000523A JP52384A JPH0312769B2 JP H0312769 B2 JPH0312769 B2 JP H0312769B2 JP 59000523 A JP59000523 A JP 59000523A JP 52384 A JP52384 A JP 52384A JP H0312769 B2 JPH0312769 B2 JP H0312769B2
Authority
JP
Japan
Prior art keywords
layer
inas
alxga
asysb
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59000523A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60144979A (ja
Inventor
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59000523A priority Critical patent/JPS60144979A/ja
Publication of JPS60144979A publication Critical patent/JPS60144979A/ja
Publication of JPH0312769B2 publication Critical patent/JPH0312769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59000523A 1984-01-07 1984-01-07 半導体デバイス Granted JPS60144979A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59000523A JPS60144979A (ja) 1984-01-07 1984-01-07 半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59000523A JPS60144979A (ja) 1984-01-07 1984-01-07 半導体デバイス

Publications (2)

Publication Number Publication Date
JPS60144979A JPS60144979A (ja) 1985-07-31
JPH0312769B2 true JPH0312769B2 (enEXAMPLES) 1991-02-21

Family

ID=11476125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59000523A Granted JPS60144979A (ja) 1984-01-07 1984-01-07 半導体デバイス

Country Status (1)

Country Link
JP (1) JPS60144979A (enEXAMPLES)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022014530A1 (ja) 2020-07-13 2022-01-20 日油株式会社 無線起爆システム及び無線起爆システム用中継装置及び無線起爆システムを用いた無線起爆方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4827320A (en) * 1986-09-19 1989-05-02 University Of Illinois Semiconductor device with strained InGaAs layer
US4987462A (en) * 1987-01-06 1991-01-22 Texas Instruments Incorporated Power MISFET
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor
JP2539268B2 (ja) * 1989-07-12 1996-10-02 富士通株式会社 半導体装置
EP0531550B1 (en) * 1991-03-28 1997-12-29 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
JP3173080B2 (ja) * 1991-12-05 2001-06-04 日本電気株式会社 電界効果トランジスタ
JP3224437B2 (ja) * 1992-11-30 2001-10-29 富士通株式会社 Ｉｉｉ−ｖ族化合物半導体装置
CN103137477B (zh) * 2013-02-27 2016-01-13 中国科学院半导体研究所 在Si基上制备InP基HEMT的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022014530A1 (ja) 2020-07-13 2022-01-20 日油株式会社 無線起爆システム及び無線起爆システム用中継装置及び無線起爆システムを用いた無線起爆方法

Also Published As

Publication number Publication date
JPS60144979A (ja) 1985-07-31

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term