JPH0310556U - - Google Patents
Info
- Publication number
- JPH0310556U JPH0310556U JP7133289U JP7133289U JPH0310556U JP H0310556 U JPH0310556 U JP H0310556U JP 7133289 U JP7133289 U JP 7133289U JP 7133289 U JP7133289 U JP 7133289U JP H0310556 U JPH0310556 U JP H0310556U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- guard ring
- impurity region
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7133289U JPH0310556U (lt) | 1989-06-19 | 1989-06-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7133289U JPH0310556U (lt) | 1989-06-19 | 1989-06-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0310556U true JPH0310556U (lt) | 1991-01-31 |
Family
ID=31608263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7133289U Pending JPH0310556U (lt) | 1989-06-19 | 1989-06-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0310556U (lt) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000183350A (ja) * | 1998-12-09 | 2000-06-30 | Stmicroelectronics Srl | 高電圧半導体デバイス用集積エッジ構造の製造方法及び該集積エッジ構造 |
JP2009187994A (ja) * | 2008-02-04 | 2009-08-20 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2011029393A (ja) * | 2009-07-24 | 2011-02-10 | Sanken Electric Co Ltd | 半導体装置 |
-
1989
- 1989-06-19 JP JP7133289U patent/JPH0310556U/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000183350A (ja) * | 1998-12-09 | 2000-06-30 | Stmicroelectronics Srl | 高電圧半導体デバイス用集積エッジ構造の製造方法及び該集積エッジ構造 |
JP4597293B2 (ja) * | 1998-12-09 | 2010-12-15 | エスティーマイクロエレクトロニクス エス.アール.エル. | 高電圧半導体デバイス用集積エッジ構造の製造方法及び該集積エッジ構造 |
JP2009187994A (ja) * | 2008-02-04 | 2009-08-20 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2011029393A (ja) * | 2009-07-24 | 2011-02-10 | Sanken Electric Co Ltd | 半導体装置 |
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