JPH0294466A - ダブルキャパシターとその製造方法 - Google Patents
ダブルキャパシターとその製造方法Info
- Publication number
- JPH0294466A JPH0294466A JP1140214A JP14021489A JPH0294466A JP H0294466 A JPH0294466 A JP H0294466A JP 1140214 A JP1140214 A JP 1140214A JP 14021489 A JP14021489 A JP 14021489A JP H0294466 A JPH0294466 A JP H0294466A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- capacitor
- double
- common ground
- nonconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000004020 conductor Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000000615 nonconductor Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 21
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000009825 accumulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR12002 | 1988-09-16 | ||
| KR1019880012002A KR910006446B1 (ko) | 1988-09-16 | 1988-09-16 | 반도체 장치의 캐패시터 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0294466A true JPH0294466A (ja) | 1990-04-05 |
Family
ID=19277799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1140214A Pending JPH0294466A (ja) | 1988-09-16 | 1989-05-31 | ダブルキャパシターとその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0294466A (ko) |
| KR (1) | KR910006446B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648695A (en) * | 1994-09-30 | 1997-07-15 | Asmo Co., Ltd. | Brush apparatus for electric rotating machine |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5294782A (en) * | 1976-02-05 | 1977-08-09 | Nec Corp | Insulation gate type ic |
| JPS5643729A (en) * | 1979-09-18 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Formation of fine pattern |
| JPS6156445A (ja) * | 1984-08-28 | 1986-03-22 | Toshiba Corp | 半導体装置 |
| JPS62118560A (ja) * | 1985-10-24 | 1987-05-29 | ゼネラル・エレクトリツク・カンパニイ | アナログ集積回路装置に適した耐火金属コンデンサ構造 |
| JPS62185325A (ja) * | 1986-01-31 | 1987-08-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | リフト・オフ法 |
-
1988
- 1988-09-16 KR KR1019880012002A patent/KR910006446B1/ko not_active IP Right Cessation
-
1989
- 1989-05-31 JP JP1140214A patent/JPH0294466A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5294782A (en) * | 1976-02-05 | 1977-08-09 | Nec Corp | Insulation gate type ic |
| JPS5643729A (en) * | 1979-09-18 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Formation of fine pattern |
| JPS6156445A (ja) * | 1984-08-28 | 1986-03-22 | Toshiba Corp | 半導体装置 |
| JPS62118560A (ja) * | 1985-10-24 | 1987-05-29 | ゼネラル・エレクトリツク・カンパニイ | アナログ集積回路装置に適した耐火金属コンデンサ構造 |
| JPS62185325A (ja) * | 1986-01-31 | 1987-08-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | リフト・オフ法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648695A (en) * | 1994-09-30 | 1997-07-15 | Asmo Co., Ltd. | Brush apparatus for electric rotating machine |
Also Published As
| Publication number | Publication date |
|---|---|
| KR910006446B1 (ko) | 1991-08-24 |
| KR900005594A (ko) | 1990-04-14 |
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