JPH0292658U - - Google Patents

Info

Publication number
JPH0292658U
JPH0292658U JP169589U JP169589U JPH0292658U JP H0292658 U JPH0292658 U JP H0292658U JP 169589 U JP169589 U JP 169589U JP 169589 U JP169589 U JP 169589U JP H0292658 U JPH0292658 U JP H0292658U
Authority
JP
Japan
Prior art keywords
ion implantation
magnetic field
semiconductor substrate
generating means
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP169589U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP169589U priority Critical patent/JPH0292658U/ja
Publication of JPH0292658U publication Critical patent/JPH0292658U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
第1図は本考案の一実施例を示す説明図、第2
図は半導体基板と磁石(磁場発生手段)との位置
関係を示す正面図である。 1……半導体基板、2……基板支持体、3……
円筒体、4……マスク、5……サプレツシヨン電
極、6……電源、7……電流計、8……真空槽、
9……磁石(磁場発生手段)。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板にイオンを注入するイオン注入装置
    において、前記半導体基板のイオン注入側の面に
    平行な磁場を、そのイオン注入側の面の近傍に発
    生させる磁場発生手段を設けたことを特徴とする
    イオン注入装置。
JP169589U 1989-01-11 1989-01-11 Pending JPH0292658U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP169589U JPH0292658U (ja) 1989-01-11 1989-01-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP169589U JPH0292658U (ja) 1989-01-11 1989-01-11

Publications (1)

Publication Number Publication Date
JPH0292658U true JPH0292658U (ja) 1990-07-23

Family

ID=31201806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP169589U Pending JPH0292658U (ja) 1989-01-11 1989-01-11

Country Status (1)

Country Link
JP (1) JPH0292658U (ja)

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