JPH028463B2 - - Google Patents

Info

Publication number
JPH028463B2
JPH028463B2 JP62297362A JP29736287A JPH028463B2 JP H028463 B2 JPH028463 B2 JP H028463B2 JP 62297362 A JP62297362 A JP 62297362A JP 29736287 A JP29736287 A JP 29736287A JP H028463 B2 JPH028463 B2 JP H028463B2
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
mosi
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62297362A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63265448A (ja
Inventor
Tooru Mochizuki
Takanari Tsujimaru
Kenji Shibata
Takama Mizoguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP29736287A priority Critical patent/JPS63265448A/ja
Publication of JPS63265448A publication Critical patent/JPS63265448A/ja
Publication of JPH028463B2 publication Critical patent/JPH028463B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP29736287A 1987-11-27 1987-11-27 Ｍｏｓ型半導体装置の製造方法 Granted JPS63265448A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29736287A JPS63265448A (ja) 1987-11-27 1987-11-27 Ｍｏｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29736287A JPS63265448A (ja) 1987-11-27 1987-11-27 Ｍｏｓ型半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15684577A Division JPS5488783A (en) 1977-12-26 1977-12-26 Semiconductor

Publications (2)

Publication Number Publication Date
JPS63265448A JPS63265448A (ja) 1988-11-01
JPH028463B2 true JPH028463B2 (en, 2012) 1990-02-23

Family

ID=17845516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29736287A Granted JPS63265448A (ja) 1987-11-27 1987-11-27 Ｍｏｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63265448A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114241A (en) * 1998-06-29 2000-09-05 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device capable of reducing contact resistance
US6277738B1 (en) 1999-06-23 2001-08-21 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device capable of reducing contact resistance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN143383B (en, 2012) * 1974-06-13 1977-11-12 Rca Corp
JPS5131189A (ja) * 1974-09-11 1976-03-17 Sony Corp Handotaisochi
JPS5132957A (ja) * 1974-09-13 1976-03-19 Matsushita Electric Ind Co Ltd Insatsuhaisenban

Also Published As

Publication number Publication date
JPS63265448A (ja) 1988-11-01

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