JPH0265336U - - Google Patents
Info
- Publication number
- JPH0265336U JPH0265336U JP14449688U JP14449688U JPH0265336U JP H0265336 U JPH0265336 U JP H0265336U JP 14449688 U JP14449688 U JP 14449688U JP 14449688 U JP14449688 U JP 14449688U JP H0265336 U JPH0265336 U JP H0265336U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- extending
- drain
- source
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の一実施例の概略斜視図、第２
図は本考案の他の実施例の概略斜視図、第３図は
従来例の概略斜視図である。
２……半導体基板、３ａ，３ｂ，３０ａ，３０
ｂ……ソース、４，４０……ドレイン、５ａ，５
ｂ，５０ａ，５０ｂ……ゲート、６，６０，６ａ
，６ｂ……ゲートパツド、９……導電部、１０ａ
，１０ｂ……抵抗測定用パツド（導電部）。
Fig. 1 is a schematic perspective view of one embodiment of the present invention;
The figure is a schematic perspective view of another embodiment of the present invention, and FIG. 3 is a schematic perspective view of a conventional example. 2...Semiconductor substrate, 3a, 3b, 30a , 30
b...Source, 4,4 0 ...Drain, 5a,5
b, 5 0 a, 5 0 b...gate, 6, 6 0 , 6a
, 6b...gate pad, 9...conductive part, 10a
, 10b...Resistance measurement pad (conductive part).
Claims (1)
トが形成され、前記ゲートは、ゲートパツドから
延出して前記ソースとドレインとの間に延在し、
その延出先端部が途切れてなる電界効果トランジ
スタにおいて、 前記ゲートの前記延出先端部には、該ゲートの
抵抗を測定できるように導電部が形成されたこと
を特徴とする電界効果トランジスタ。[Claims for Utility Model Registration] A source, a drain, and a gate are formed on a semiconductor substrate, the gate extending from a gate pad and extending between the source and drain,
A field effect transistor having a discontinuous extending tip, wherein a conductive portion is formed at the extending tip of the gate so that the resistance of the gate can be measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14449688U JPH0265336U (en) | 1988-11-05 | 1988-11-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14449688U JPH0265336U (en) | 1988-11-05 | 1988-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0265336U true JPH0265336U (en) | 1990-05-16 |
Family
ID=31412257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14449688U Pending JPH0265336U (en) | 1988-11-05 | 1988-11-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0265336U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108679A (en) * | 2004-10-01 | 2006-04-20 | Internatl Rectifier Corp | Group iii nitride semiconductor device with current detection electrode |
-
1988
- 1988-11-05 JP JP14449688U patent/JPH0265336U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108679A (en) * | 2004-10-01 | 2006-04-20 | Internatl Rectifier Corp | Group iii nitride semiconductor device with current detection electrode |