JPH0263277B2 - - Google Patents

Info

Publication number
JPH0263277B2
JPH0263277B2 JP57006009A JP600982A JPH0263277B2 JP H0263277 B2 JPH0263277 B2 JP H0263277B2 JP 57006009 A JP57006009 A JP 57006009A JP 600982 A JP600982 A JP 600982A JP H0263277 B2 JPH0263277 B2 JP H0263277B2
Authority
JP
Japan
Prior art keywords
data
control signal
mosfet
ram
input buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57006009A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125291A (ja
Inventor
Kyobumi Uchibori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57006009A priority Critical patent/JPS58125291A/ja
Publication of JPS58125291A publication Critical patent/JPS58125291A/ja
Publication of JPH0263277B2 publication Critical patent/JPH0263277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

Landscapes

  • Static Random-Access Memory (AREA)
JP57006009A 1982-01-20 1982-01-20 Ｍｏｓスタテイツク型ｒａｍ Granted JPS58125291A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57006009A JPS58125291A (ja) 1982-01-20 1982-01-20 Ｍｏｓスタテイツク型ｒａｍ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57006009A JPS58125291A (ja) 1982-01-20 1982-01-20 Ｍｏｓスタテイツク型ｒａｍ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3294149A Division JP2631925B2 (ja) 1991-11-11 1991-11-11 Ｍｏｓ型ｒａｍ

Publications (2)

Publication Number Publication Date
JPS58125291A JPS58125291A (ja) 1983-07-26
JPH0263277B2 true JPH0263277B2 (enrdf_load_stackoverflow) 1990-12-27

Family

ID=11626715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57006009A Granted JPS58125291A (ja) 1982-01-20 1982-01-20 Ｍｏｓスタテイツク型ｒａｍ

Country Status (1)

Country Link
JP (1) JPS58125291A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103585A (ja) * 1983-11-11 1985-06-07 Nec Corp Ｃｍｏｓメモリ回路
JPH0795395B2 (ja) * 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
EP0404013B1 (en) * 1989-06-19 1995-12-13 Nec Corporation Semiconductor memory device with an improved write control circuit
JP3057710B2 (ja) * 1990-04-27 2000-07-04 日本電気株式会社 半導体メモリ装置
JPH07122996B2 (ja) * 1991-02-13 1995-12-25 株式会社日立製作所 半導体集積回路
KR940007639B1 (ko) * 1991-07-23 1994-08-22 삼성전자 주식회사 분할된 입출력 라인을 갖는 데이타 전송회로

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS5437544A (en) * 1977-08-29 1979-03-20 Sharp Corp Mos static random access memory
JPS5835783A (ja) * 1981-08-24 1983-03-02 Fujitsu Ltd 半導体メモリ

Also Published As

Publication number Publication date
JPS58125291A (ja) 1983-07-26

Similar Documents

Publication Publication Date Title
KR970011133B1 (ko) 반도체 메모리
US6930941B2 (en) Semiconductor memory device having potential amplitude of global bit line pair restricted to partial swing
JPH0479080B2 (enrdf_load_stackoverflow)
JPH10208484A (ja) 半導体記憶装置のデータ読出回路及び半導体記憶装置
US20040047404A1 (en) Semiconductor memory device having repeaters located at the global input/output line
US4992983A (en) Semiconductor memory device with an improved write control circuit
JP3277108B2 (ja) Ｄｒａｍアレイ
JPH0263277B2 (enrdf_load_stackoverflow)
JP2786420B2 (ja) データリード／ライト方法及びその装置
JP2892697B2 (ja) 半導体記憶装置
JP2631925B2 (ja) Ｍｏｓ型ｒａｍ
JP2689032B2 (ja) 半導体装置
JPH06195977A (ja) 半導体記憶装置
JPH0550077B2 (enrdf_load_stackoverflow)
JPS62102498A (ja) スタテイツク型ランダムアクセスメモリのメモリセル電源制御回路
JP2892552B2 (ja) 半導体記憶装置
JP2696087B2 (ja) 半導体記憶装置
JP3135255B2 (ja) デコーダ回路及び半導体記憶装置
JP2549235B2 (ja) 半導体記憶装置
JP2736249B2 (ja) 半導体記憶装置
JP3277884B2 (ja) メモリ読み出し書き込み回路および半導体記憶装置
JPH0746497B2 (ja) 半導体記憶装置
JPH07230694A (ja) 半導体記憶装置
JPH0449197B2 (enrdf_load_stackoverflow)
JPH05128857A (ja) 半導体記憶装置