JPH0262953B2 - - Google Patents

Info

Publication number
JPH0262953B2
JPH0262953B2 JP60145364A JP14536485A JPH0262953B2 JP H0262953 B2 JPH0262953 B2 JP H0262953B2 JP 60145364 A JP60145364 A JP 60145364A JP 14536485 A JP14536485 A JP 14536485A JP H0262953 B2 JPH0262953 B2 JP H0262953B2
Authority
JP
Japan
Prior art keywords
light
glass substrate
receiving plate
photoelectric conversion
curved surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60145364A
Other languages
English (en)
Other versions
JPS625671A (ja
Inventor
Yasuo Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60145364A priority Critical patent/JPS625671A/ja
Priority to US06/878,118 priority patent/US4686321A/en
Publication of JPS625671A publication Critical patent/JPS625671A/ja
Priority to US07/057,021 priority patent/US4795500A/en
Publication of JPH0262953B2 publication Critical patent/JPH0262953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10761—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10807—Making laminated safety glass or glazing; Apparatus therefor
    • B32B17/10889—Making laminated safety glass or glazing; Apparatus therefor shaping the sheets, e.g. by using a mould
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1028—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by bending, drawing or stretch forming sheet to assume shape of configured lamina while in contact therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 本発明は光エネルギを直接電気エネルギに変換
する光起電力装置の製造方法に関し、本発明によ
り製造された光起電力装置は例えば自動車のサン
ルーフに取り付けられる。
(ロ) 従来の技術 光エネルギを直接電気エネルギに変換する光起
電力装置、所謂太陽電池は無尽蔵な太陽光を主た
るエネルギ源としているために、エネルギ資源の
枯渇が問題となる中で脚光を浴びている。太陽は
晴天時に約1kW／m2のエネルギを地表に与えて
おり、太陽電池の光エネルギを電気エネルギに変
換する光電変換効率が例えば10％と仮定すると、
有効受光面積が10cm×10cmの太陽電池を用いたと
しても1Wしか発電しないために、有効受光面積
の大面積化が要求される。
この様な要求を満たすべく特公昭53−37718号
公報に開示された如き、シリコン化合物ガスを原
料ガスとするプラズマCVD法により得られるア
モルフアスシリコン膜を光電変換動作する光活性
層とする太陽電池が開発された。即ち、アモルフ
アスシリコン膜はシリコン化合物ガスを原料ガス
とし、そのガスをプラズマ分解することによつて
容易に得られるために大面積化に好都合である。
また最近では低圧水銀ランプを利用した光CVD
法によつてもアモルフアスシリコン太陽電池が試
作されている。
然し乍ら、斯るプラズマCVD法や光CVD法に
より大面積の太陽電池が得られるようになりつつ
あるものの、光活性層が膜状を呈する以上その光
活性層を支持する基板は不可欠な存在であり、そ
の基板の支持面が曲面であると、膜厚均一な光活
性層を得ることは難しく、最大の光電変換効率を
呈する最適膜厚が得られない。また仮に膜厚が均
一な光活性層が形成できたとしても、斯る光活性
層は光電変換素子を構成する電極膜を所定形状に
微細にパターニングすることも極めて困難であ
る。
実開昭60−52640号公報に開示された先行技術
によれば、予め膜状の光電変換素子を平坦な状態
のフレキシブル基板に形成せしめた後、斯るフレ
キシブル基板をその柔軟性を利用して支持板の曲
面に接着することにより対処する方法を提案して
いる。
ところが斯るフレキシブル基板を光電変換素子
の支持基板とすると、今度はその柔軟性が災いし
て製造途中、特に加熱工程に於いて平坦面に形成
される光電変換素子の構成膜とフレキシブル基板
との熱膨張係数の差等に起因して僅かに湾曲（カ
ール）したり、また外部からの圧力付加により容
易に変形するために光電変換素子を破壊する危惧
を有する。更には、ガラス基板を支持基板とする
光起電力装置は、既に電卓、時計等の民生用小型
電子機器の電源のみならず太陽光発電としても実
用化されているものの、フレキシブル基板を支持
基板とした光起電力装置は、プロセスが煩雑とな
るためにプロセスコストが高価になるにも拘ず光
電変換効率等の特性が低く、屋外仕様、即ち耐候
性の点で問題を含んでおり、殆んど実用化される
に至つていない。
(ハ) 発明が解決しようとする問題点 本発明は上述の如く種々の問題点を有するフレ
キシブル基板を光電変換素子の支持基板とするこ
となく、透光性受光板の曲面に光電変換素子を配
置した光起電力装置の製造方法を提供することを
目的としている。
(ニ) 問題点を解決するための手段 本発明光起電力装置の製造方法は、互いに平行
な平坦面を有する透光性のガラス基板を用意し、
その一方の平坦面に膜状の光電変換素子を形成し
た後、上記ガラス基板を接着シートを挾んで該ガ
ラス基板よりも機械的強度の大きい透光性受光板
の曲面に対峙せしめ、これらを減圧状態下に保持
し、上記ガラス基板を湾曲せしめて上記受光板の
曲面に上記接着シートを挾んで当接せしめたこと
を特徴とする。
(ホ) 作用 上述の如く膜状の光電変換素子を予め透光性の
ガラス基板の平坦面に形成した後、その平坦なガ
ラス基板を透光性受光板の曲面に対峙せしめ、そ
れらを減圧状態下に保持することによつて、上記
受光板に比して機械的強度の小さいガラス基板が
該受光板の曲面に沿つて湾曲する。
(ヘ) 実施例 第１図は本発明製造方法を説明するための分解
断面図、第２図は完成状態の断面図第３図は完成
状態の要部拡大断面図であつて、１は互いに平行
な平坦面１ａ，１ｂを有し予め一方の平坦面１ｂ
に膜状の光電変換素子２，２…が形成された透光
性のガラス基板で、該ガラス基板１は通常の窓用
の所謂青板ガラス（ソーダ石灰ガラス）からな
り、例えば0.2mm〜2.0mm程度の板厚を備えてい
る。３は第１図に於いて接着シート４ａを挾んで
その一方の曲面３ｂが対峙した透光性受光板で、
平面にして40cm〜90cm×80cm〜180cm程度の面積
を備え、その周囲や全体に50mm〜105mm程度の曲
率半径を持つ曲面３ａ，３ｂが形成された例えば
自動車用のサンルーフ或いはムーンルーフであ
り、上記ガラス基板１よりも機械的強度が大きく
なるべく材料や板厚が選択されている。上述の如
く透光性受光板３の好ましい実施例である自動車
用のサンルーフ或いはムーンルーフにあつては強
化ガラスやポリカーボネート、アクリル等から曲
面状に成型されている。５は上記受光板３の他方
の主面３ａを受光面とした場合、ガラス基板１の
一方の主面１ｂに支持された光電変換素子２，２
…の背面側を保護する保護フイルムで、該保護フ
イルム５も第１図に示す如く接着シート４ｂを挾
んでガラス基板１の一方の主面１ｂと対峙する。
６は光電変換素子２，２…の光電変換出力、即ち
光起電力を外部に導出するための端子ボツクス
で、一対のリード線７ａ，７ｂが延出している。
而して、第１図に示した如く透光性受光板３の
凹状曲面３ｂ側に、その曲面３ｂ側に位置する接
着シート４ａが先ずその曲面３ｂに沿つて敷設せ
しめられる。次いで、ガラス基板１が受光板３の
凹状曲面３ｂに積み重ねられるが、ガラス基板１
は柔軟性を備えていないために、その平坦面１ａ
は受光板３の凹状曲面３ｂに沿つて敷設された接
着シート４ａと当接することなくその曲率に応じ
た空隙を形成した状態で対峙することとなる。そ
して、光電変換素子２，２…が形成されたガラス
基板１の一方の主面１ａ上に接着シート４ｂ及び
保護フイルム５が順次積層され、端子ボツクス６
が光電変換素子２，２…と電気的に結線される。
この様にして電気的結線が終了すると、これら
積層体を柔軟な袋状体に収納し、該袋状体の開孔
部分から内部を10Torr以下の減圧状態に保持す
べく排気する。斯る排気が進行すると、袋状体の
内部はその外周方向から大気圧による圧迫を受け
るために、機械的強度の小さいガラス基板１が受
光板３の凹状曲面３ｂとの間に形成した空隙を縮
減すべく湾曲変形し、最終的に上記受光板３の凹
状曲面３ｂとガラス基板１は接着シート４ａを挾
んで綿密に当接する。
この時、上記接着シート４ａ，４ｂが常温状態
に於いて接着性を有するものにあつては受光板
３、ガラス基板１及び保護フイルム５が接着固定
されるものの、屈折率が受光板３とガラス基板１
のそれとほぼ等しいポリビニルブチラール
（PVB）やエチレンビニルアセテート（EVA）
にあつては加熱工程が施される。斯るPVB及び
EVA共に厚み0.1mm〜数mm程度のシート状のもの
が例えば米国デユポン社から市販されており、購
入時白濁していると雖も上述の如く10Torr以下
の減圧状態を保持しつつ、約100℃〜150℃の加熱
工程を５分〜20分程度施すことにより、上記
PVBやEVAを溶融脱気し、その後冷却すれば上
記受光板３、ガラス基板１及び保護フイルム５が
透明となつたPVB或いはEVAの接着シート４
ａ，４ｂを介して一体的に結合される。
本発明光起電力装置の製造方法に於ける光電変
換素子２，２…の好適な実施例は、第３図に拡大
して示す如くガラス基板１の一方の主面１ｂ側か
ら酸化スズ、酸化インジウムスズに代表される透
光性導電酸化物（TCO）の第１電極膜８と、そ
の内部に膜面に平行な半導体接合を備えたシリコ
ン化合物ガスを原料ガスとするプラズマCVD法
や光CVD法により形成されたアモルフアスシリ
コン系の半導体光活性層９と、アルミニウム、
銀、TCO／銀等の第２電極膜１０と、の積層体
からなり、それら光電変換素子２，２…は一定間
隔を隔てて整列配置されると共に、それらの隣接
間隔部に於いて相隣り合う第１電極膜８と第２電
極膜１０とが電気的に結合されている。
(ト) 発明の効果 本発明光起電力装置の製造方法は以上の説明か
ら明らかな如く、膜状の光電変換素子を予め透光
性の平坦面に形成した後、その平坦なガラス基板
を透光性受光板の曲面に対峙せしめ、それらを減
圧状態下に保持することによつて、上記受光板に
比して機械的強度の小さいガラス基板は該受光板
の曲面に沿つて湾曲し、ガラス基板と受光板は両
者の間に介在せしめられていた接着シートにより
一体的に結合することができるので、電気的特
性、耐候性、製造歩留まり、プロセスコスト等で
優れ既に実用化されている平坦なガラス基板を膜
状光電変換素子の支持基板として用いることがで
き、実用化が極めて難しかつた曲面を持つ光起電
力装置の製造を容易に実現せしめることができ
る。
【図面の簡単な説明】
第１図は本発明製造方法を説明するための分解
断面図、第２図は本発明製造方法によつて製造さ
れた光起電力装置の断面図、第３図は第２図の要
部拡大断面図、を夫々示している。 １……透光性ガラス基板、１ａ，１ｂ……平坦
面、２……膜状光電変換素子、３……透光性受光
板、３ａ，３ｂ……曲面、４ａ，４ｂ……接着シ
ート、５……保護フイルム。

Claims (1)

    【特許請求の範囲】
  1. １ 互いに平行な平坦面を有する透光性のガラス
    基板を用意し、その一方の平坦面に膜状の光電変
    換素子を形成した後、上記ガラス基板を接着シー
    トを挾んで該ガラス基板よりも機械的強度の大き
    い透光性受光板の曲面に対峙せしめ、これらを減
    圧状態下に保持し、上記ガラス基板を湾曲せしめ
    て上記受光板の曲面に上記接着シートを挾んで当
    接せしめたことを特徴とする光起電力装置の製造
    方法。
JP60145364A 1985-07-02 1985-07-02 光起電力装置の製造方法 Granted JPS625671A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60145364A JPS625671A (ja) 1985-07-02 1985-07-02 光起電力装置の製造方法
US06/878,118 US4686321A (en) 1985-07-02 1986-06-25 Photovoltaic device and method of manufacturing thereof
US07/057,021 US4795500A (en) 1985-07-02 1987-06-01 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60145364A JPS625671A (ja) 1985-07-02 1985-07-02 光起電力装置の製造方法

Publications (2)

Publication Number Publication Date
JPS625671A JPS625671A (ja) 1987-01-12
JPH0262953B2 true JPH0262953B2 (ja) 1990-12-27

Family

ID=15383496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60145364A Granted JPS625671A (ja) 1985-07-02 1985-07-02 光起電力装置の製造方法

Country Status (2)

Country Link
US (1) US4686321A (ja)
JP (1) JPS625671A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0441559U (ja) * 1990-08-01 1992-04-08

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795500A (en) * 1985-07-02 1989-01-03 Sanyo Electric Co., Ltd. Photovoltaic device
JPS62186447U (ja) * 1986-05-19 1987-11-27
US7864151B1 (en) 1986-07-07 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
JPH058180Y2 (ja) * 1987-02-12 1993-03-02
US5059254A (en) * 1988-05-24 1991-10-22 Asahi Glass Company Ltd. Solar cell substrate and solar panel for automobile
DE69001937T2 (de) * 1989-03-31 1994-02-03 Asahi Glass Co Ltd Elektrisch beheizbare Windschutzscheibe.
JP2500974Y2 (ja) * 1990-01-11 1996-06-12 日本板硝子株式会社 中間物内蔵型合わせガラス
DE4105389C1 (ja) * 1991-02-21 1992-06-11 Webasto-Schade Gmbh, 8031 Oberpfaffenhofen, De
US5252139A (en) * 1991-02-21 1993-10-12 Solems S.A. Photovoltaic thin layers panel structure
FR2673327B1 (fr) * 1991-02-21 1993-12-24 Solems Dispositif et cellule photovoltauique formes sur une plaque courbee et pouvant presenter une transparence partielle.
US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
US5507880A (en) * 1992-06-08 1996-04-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous solar module having improved passivation
US5460660A (en) * 1993-07-21 1995-10-24 Photon Energy, Inc. Apparatus for encapsulating a photovoltaic module
US5508205A (en) * 1994-03-29 1996-04-16 Amoco/Enron Solar Method of making and utilizing partially cured photovoltaic assemblies
US6215060B1 (en) * 1997-04-21 2001-04-10 Canon Kabushiki Kaisha Method for manufacturing a solar cell module
AU768216B2 (en) * 1997-04-21 2003-12-04 Canon Kabushiki Kaisha Solar cell module and method for manufacturing same
US6160215A (en) 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
DE10062712A1 (de) * 2000-12-15 2002-06-20 Boehringer Ingelheim Pharma Neue Arzneimittelkompositionen auf der Basis von Anticholinergika und Corticosteroiden
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
MY144264A (en) * 2001-11-29 2011-08-29 Transform Solar Pty Ltd Semiconductur texturing process
AU2004204637B8 (en) * 2003-01-10 2009-05-21 Kaneka Corporation Transparent thin-film solar cell module and its manufacturing method
ITMI20040253A1 (it) * 2004-02-16 2004-05-16 Curvet S P A Modulo fotovoltaico curvo processo produttivo e relativa vetrara isolante termicamente ed acusticamente
CN100361318C (zh) * 2005-10-21 2008-01-09 李毅 一种太阳能电池天窗及其制造方法
CN101363266A (zh) * 2007-08-09 2009-02-11 鸿富锦精密工业（深圳）有限公司 太阳能屋
TWI379425B (en) * 2007-12-13 2012-12-11 Nexpower Technology Corp Translucent solar cell and manufacturing method thereof
CN102132419B (zh) * 2009-01-29 2012-12-26 京瓷株式会社 光电转换元件及光电转换模块
AU2010201980A1 (en) * 2009-05-21 2010-12-09 Suntech Power Co., Ltd. Thin film solar module
TWI463680B (zh) * 2009-06-22 2014-12-01 Nexpower Technology Corp Transparent thin film solar cells
GB2472608B (en) * 2009-08-12 2013-09-04 M Solv Ltd Method and Apparatus for making a solar panel that is partially transparent
TW201210036A (en) * 2010-08-25 2012-03-01 An Ching New Energy Machinery & Equipment Co Ltd Enhanced intelligent thin film solar cell for temperature-oriented infrared light transmittance function
US8834664B2 (en) 2010-10-22 2014-09-16 Guardian Industries Corp. Photovoltaic modules for use in vehicle roofs, and/or methods of making the same
WO2012073868A1 (ja) * 2010-11-30 2012-06-07 三洋電機株式会社 光電変換装置及びその製造方法
US20130008500A1 (en) * 2011-07-06 2013-01-10 Changzhou Almaden Co., Ltd. Physical tempered glass, solar cover plate, solar backsheet and solar panel
DE102011081081A1 (de) * 2011-08-17 2013-02-21 Robert Bosch Gmbh Solarmodul
DE112013002119T5 (de) * 2012-04-18 2014-12-31 Guardian Industries Corp. Verbesserte photovoltaische Module zur Verwendung in Fahrzeugdächern und/oder Verfahren zu ihrer Herstellung
KR20150013668A (ko) * 2012-06-05 2015-02-05 쌩-고벵 글래스 프랑스 일체형 광전지 모듈을 갖는 루프 패널
CN203013752U (zh) * 2012-06-21 2013-06-19 长春光景科技有限公司 一种柔性太阳能电池组件
EP2913921B1 (en) * 2013-04-10 2017-03-01 Panasonic Intellectual Property Management Co., Ltd. Solar cell apparatus
CN103258881B (zh) * 2013-05-07 2015-11-11 宁波山迪光能技术有限公司 薄膜太阳能电池板及其制备方法
KR101643236B1 (ko) * 2015-02-27 2016-07-29 주식회사 무한 박막형 태양전지를 이용한 구조물
JP6668823B2 (ja) * 2015-04-08 2020-03-18 Ａｇｃ株式会社 合わせ板
FR3073322B1 (fr) * 2017-11-07 2021-12-03 Commissariat Energie Atomique Procede de realisation d'au moins un circuit electronique courbe

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565719A (en) * 1967-05-17 1971-02-23 Nasa Solar panel fabrication
JPS52640A (en) * 1975-06-12 1977-01-06 Saito Chiyouichi Production of fluidity seed fungus of edible mushroom
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
JPS59217378A (ja) * 1983-05-25 1984-12-07 Semiconductor Energy Lab Co Ltd 光電変換装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0441559U (ja) * 1990-08-01 1992-04-08

Also Published As

Publication number Publication date
JPS625671A (ja) 1987-01-12
US4686321A (en) 1987-08-11

Similar Documents

Publication Publication Date Title
JPH0262953B2 (ja)
TWI413266B (zh) 太陽能電池模組
EP1973171B1 (en) Solar cell module
KR101245458B1 (ko) 태양 전지 모듈
US6320115B1 (en) Semicondonductor device and a process for the production thereof
US5679176A (en) Group of solar cell elements, and solar cell module and production method thereof
JPH11312820A (ja) 太陽電池モジュール及びその製造方法
JP3288876B2 (ja) 太陽電池モジュール及びその製造方法
US20030005954A1 (en) Solar cell module and method of manufacturing the same
WO2014180281A1 (zh) 薄膜太阳能电池板及其制备方法
KR102360087B1 (ko) 컬러필름 적용 태양광 모듈 및 이의 제조방법
US20040182432A1 (en) Photovoltaic module subassembly and photovoltaic module with sealed insulating glass
US20120031465A1 (en) Solar module in an insulating glass composite method for production and use
WO2014180282A1 (zh) 太阳能汽车天窗及其制作方法
JP3609572B2 (ja) 太陽電池モジュールの製造方法
JP5507034B2 (ja) 太陽電池モジュール及びその製造方法
JP2002043594A (ja) 光透過型薄膜太陽電池モジュール
JPH09116182A (ja) 太陽電池モジュール及び太陽電池モジュールの製造方法
JP3363367B2 (ja) 太陽電池モジュール用カバーガラス構造
JP2001244486A (ja) 太陽電池モジュール
JP4330241B2 (ja) 太陽電池モジュール
JP2002111014A (ja) 太陽光発電プラスチックモジュール
JP2007201315A (ja) 太陽電池モジュールの製造方法及びその製造装置
JPH09331079A (ja) フレームレス太陽電池モジュール
CN210073875U (zh) 太阳能幕墙组件及太阳能幕墙

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term