JPH026237B2 - - Google Patents
Info
- Publication number
- JPH026237B2 JPH026237B2 JP57037381A JP3738182A JPH026237B2 JP H026237 B2 JPH026237 B2 JP H026237B2 JP 57037381 A JP57037381 A JP 57037381A JP 3738182 A JP3738182 A JP 3738182A JP H026237 B2 JPH026237 B2 JP H026237B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- semiconductor element
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57037381A JPS58154286A (ja) | 1982-03-10 | 1982-03-10 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57037381A JPS58154286A (ja) | 1982-03-10 | 1982-03-10 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58154286A JPS58154286A (ja) | 1983-09-13 |
JPH026237B2 true JPH026237B2 (it) | 1990-02-08 |
Family
ID=12495941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57037381A Granted JPS58154286A (ja) | 1982-03-10 | 1982-03-10 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58154286A (it) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0285943U (it) * | 1988-12-22 | 1990-07-06 | ||
JPH03291452A (ja) * | 1990-04-04 | 1991-12-20 | Rinnai Corp | 湯張り装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5936263U (ja) * | 1982-08-30 | 1984-03-07 | 日本電気株式会社 | 半導体装置 |
JPS60201382A (ja) * | 1984-03-26 | 1985-10-11 | ロ−ム株式会社 | 発光表示装置 |
JPS60251654A (ja) * | 1984-05-28 | 1985-12-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6169169A (ja) * | 1984-09-13 | 1986-04-09 | Agency Of Ind Science & Technol | 半導体受光素子 |
FR2588701B1 (fr) * | 1985-10-14 | 1988-12-30 | Bouadma Noureddine | Procede de realisation d'une structure integree laser-photodetecteur |
-
1982
- 1982-03-10 JP JP57037381A patent/JPS58154286A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0285943U (it) * | 1988-12-22 | 1990-07-06 | ||
JPH03291452A (ja) * | 1990-04-04 | 1991-12-20 | Rinnai Corp | 湯張り装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS58154286A (ja) | 1983-09-13 |
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