JPH0260223B2 - - Google Patents

Info

Publication number
JPH0260223B2
JPH0260223B2 JP61171136A JP17113686A JPH0260223B2 JP H0260223 B2 JPH0260223 B2 JP H0260223B2 JP 61171136 A JP61171136 A JP 61171136A JP 17113686 A JP17113686 A JP 17113686A JP H0260223 B2 JPH0260223 B2 JP H0260223B2
Authority
JP
Japan
Prior art keywords
layer
alinas
gainas
gainasp
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61171136A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6328072A (ja
Inventor
Goro Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP61171136A priority Critical patent/JPS6328072A/ja
Priority to CA000542616A priority patent/CA1294064C/en
Priority to EP87110547A priority patent/EP0257300A1/en
Priority to KR1019870007872A priority patent/KR900007049B1/ko
Publication of JPS6328072A publication Critical patent/JPS6328072A/ja
Publication of JPH0260223B2 publication Critical patent/JPH0260223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP61171136A 1986-07-21 1986-07-21 電界効果トランジスタ Granted JPS6328072A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61171136A JPS6328072A (ja) 1986-07-21 1986-07-21 電界効果トランジスタ
CA000542616A CA1294064C (en) 1986-07-21 1987-07-21 Field effect transistor
EP87110547A EP0257300A1 (en) 1986-07-21 1987-07-21 Field effect transistor
KR1019870007872A KR900007049B1 (ko) 1986-07-21 1987-07-21 전계효과트랜지스터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61171136A JPS6328072A (ja) 1986-07-21 1986-07-21 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS6328072A JPS6328072A (ja) 1988-02-05
JPH0260223B2 true JPH0260223B2 (OSRAM) 1990-12-14

Family

ID=15917652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61171136A Granted JPS6328072A (ja) 1986-07-21 1986-07-21 電界効果トランジスタ

Country Status (4)

Country Link
EP (1) EP0257300A1 (OSRAM)
JP (1) JPS6328072A (OSRAM)
KR (1) KR900007049B1 (OSRAM)
CA (1) CA1294064C (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121453A (ja) * 1991-10-29 1993-05-18 Rohm Co Ltd 化合物半導体装置
CN102741898B (zh) 2012-02-27 2015-12-09 华为终端有限公司 一种电力网关及电力网关的通信方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953714B2 (ja) 1979-12-28 1984-12-26 富士通株式会社 半導体装置
FR2492167A1 (fr) 1980-10-14 1982-04-16 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
JPS5953714A (ja) 1982-09-13 1984-03-28 Touyoubou Pet Koode Kk 熱寸法安定性のすぐれた合成繊維の製造方法

Also Published As

Publication number Publication date
CA1294064C (en) 1992-01-07
EP0257300A1 (en) 1988-03-02
KR900007049B1 (ko) 1990-09-27
KR880002278A (ko) 1988-04-30
JPS6328072A (ja) 1988-02-05

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term