JPH0260210B2 - - Google Patents

Info

Publication number
JPH0260210B2
JPH0260210B2 JP61144919A JP14491986A JPH0260210B2 JP H0260210 B2 JPH0260210 B2 JP H0260210B2 JP 61144919 A JP61144919 A JP 61144919A JP 14491986 A JP14491986 A JP 14491986A JP H0260210 B2 JPH0260210 B2 JP H0260210B2
Authority
JP
Japan
Prior art keywords
gas
wafer
psg
sih
dust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61144919A
Other languages
English (en)
Japanese (ja)
Other versions
JPS632330A (ja
Inventor
Masahide Nishimura
Kanetake Takasaki
Kenji Koyama
Atsuhiro Tsukune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61144919A priority Critical patent/JPS632330A/ja
Priority to KR1019870006346A priority patent/KR900008970B1/ko
Priority to DE8787305566T priority patent/DE3764554D1/de
Priority to US07/065,505 priority patent/US4781945A/en
Priority to EP87305566A priority patent/EP0251650B1/en
Publication of JPS632330A publication Critical patent/JPS632330A/ja
Publication of JPH0260210B2 publication Critical patent/JPH0260210B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/692—
    • H10P14/6923—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H10P14/6334—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
JP61144919A 1986-06-23 1986-06-23 化学気相成長方法 Granted JPS632330A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61144919A JPS632330A (ja) 1986-06-23 1986-06-23 化学気相成長方法
KR1019870006346A KR900008970B1 (ko) 1986-06-23 1987-06-22 인규산 글라스(psg) 코팅 형성 공정
DE8787305566T DE3764554D1 (de) 1986-06-23 1987-06-23 Verfahren zum niederschlagen von phosphorsilikatglasschichten.
US07/065,505 US4781945A (en) 1986-06-23 1987-06-23 Process for the formation of phosphosilicate glass coating
EP87305566A EP0251650B1 (en) 1986-06-23 1987-06-23 Process for the formation of phosphosilicate glass coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61144919A JPS632330A (ja) 1986-06-23 1986-06-23 化学気相成長方法

Publications (2)

Publication Number Publication Date
JPS632330A JPS632330A (ja) 1988-01-07
JPH0260210B2 true JPH0260210B2 (cg-RX-API-DMAC10.html) 1990-12-14

Family

ID=15373285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61144919A Granted JPS632330A (ja) 1986-06-23 1986-06-23 化学気相成長方法

Country Status (5)

Country Link
US (1) US4781945A (cg-RX-API-DMAC10.html)
EP (1) EP0251650B1 (cg-RX-API-DMAC10.html)
JP (1) JPS632330A (cg-RX-API-DMAC10.html)
KR (1) KR900008970B1 (cg-RX-API-DMAC10.html)
DE (1) DE3764554D1 (cg-RX-API-DMAC10.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244841A (en) * 1988-11-10 1993-09-14 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
US5112776A (en) * 1988-11-10 1992-05-12 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
EP0419053B1 (en) * 1989-08-31 1997-12-29 AT&T Corp. Dielectric film deposition method and apparatus
US5328872A (en) * 1989-12-29 1994-07-12 At&T Bell Laboratories Method of integrated circuit manufacturing using deposited oxide
DE69231390D1 (de) * 1991-06-10 2000-10-05 At & T Corp Anisotropische Ablagerung von Dielektrika
US5434110A (en) * 1992-06-15 1995-07-18 Materials Research Corporation Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
FR2695118B1 (fr) * 1992-09-02 1994-10-07 Air Liquide Procédé de formation d'une couche barrière sur une surface d'un objet en verre.
US5854131A (en) * 1996-06-05 1998-12-29 Advanced Micro Devices, Inc. Integrated circuit having horizontally and vertically offset interconnect lines
US5773361A (en) * 1996-11-06 1998-06-30 International Business Machines Corporation Process of making a microcavity structure and applications thereof
US6013584A (en) * 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6073576A (en) 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US6734564B1 (en) * 1999-01-04 2004-05-11 International Business Machines Corporation Specially shaped contact via and integrated circuit therewith
US20040134352A1 (en) * 2003-01-13 2004-07-15 David Stacey Silica trap for phosphosilicate glass deposition tool
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
JP7294858B2 (ja) * 2019-04-09 2023-06-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
EP0047112B1 (en) * 1980-08-29 1985-11-27 Fujitsu Limited Method of forming phosphosilicate glass films
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells

Also Published As

Publication number Publication date
KR880001042A (ko) 1988-03-31
DE3764554D1 (de) 1990-10-04
KR900008970B1 (ko) 1990-12-15
EP0251650B1 (en) 1990-08-29
US4781945A (en) 1988-11-01
EP0251650A1 (en) 1988-01-07
JPS632330A (ja) 1988-01-07

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