JPH0259634B2 - - Google Patents

Info

Publication number
JPH0259634B2
JPH0259634B2 JP18585582A JP18585582A JPH0259634B2 JP H0259634 B2 JPH0259634 B2 JP H0259634B2 JP 18585582 A JP18585582 A JP 18585582A JP 18585582 A JP18585582 A JP 18585582A JP H0259634 B2 JPH0259634 B2 JP H0259634B2
Authority
JP
Japan
Prior art keywords
layer
film
nicrsi
pattern
strain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18585582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5975676A (ja
Inventor
Koichiro Sakamoto
Shinichi Mizushima
Shozo Takeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Toshiba Corp
Original Assignee
Tokyo Sanyo Electric Co Ltd
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Toshiba Corp filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP18585582A priority Critical patent/JPS5975676A/ja
Publication of JPS5975676A publication Critical patent/JPS5975676A/ja
Publication of JPH0259634B2 publication Critical patent/JPH0259634B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Force In General (AREA)
JP18585582A 1982-10-22 1982-10-22 歪センサ Granted JPS5975676A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18585582A JPS5975676A (ja) 1982-10-22 1982-10-22 歪センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18585582A JPS5975676A (ja) 1982-10-22 1982-10-22 歪センサ

Publications (2)

Publication Number Publication Date
JPS5975676A JPS5975676A (ja) 1984-04-28
JPH0259634B2 true JPH0259634B2 (ko) 1990-12-13

Family

ID=16178053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18585582A Granted JPS5975676A (ja) 1982-10-22 1982-10-22 歪センサ

Country Status (1)

Country Link
JP (1) JPS5975676A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6440042U (ko) * 1987-09-07 1989-03-09
JPH0680847B2 (ja) * 1987-09-08 1994-10-12 日本電気株式会社 電歪効果素子
JPH0887375A (ja) * 1994-09-16 1996-04-02 Fujitsu Ltd ポインティングデバイス
JP2019132790A (ja) * 2018-02-02 2019-08-08 ミネベアミツミ株式会社 ひずみゲージ

Also Published As

Publication number Publication date
JPS5975676A (ja) 1984-04-28

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