JPH0258787B2 - - Google Patents
Info
- Publication number
- JPH0258787B2 JPH0258787B2 JP56122353A JP12235381A JPH0258787B2 JP H0258787 B2 JPH0258787 B2 JP H0258787B2 JP 56122353 A JP56122353 A JP 56122353A JP 12235381 A JP12235381 A JP 12235381A JP H0258787 B2 JPH0258787 B2 JP H0258787B2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- metal
- contact
- semiconductor device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P14/69394—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
-
- H10D64/011—
-
- H10D64/0116—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H10P14/60—
-
- H10P14/6314—
-
- H10P14/6324—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17496380A | 1980-08-04 | 1980-08-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5753932A JPS5753932A (show.php) | 1982-03-31 |
| JPH0258787B2 true JPH0258787B2 (show.php) | 1990-12-10 |
Family
ID=22638251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56122353A Expired - Lifetime JPH0258787B2 (show.php) | 1980-08-04 | 1981-08-04 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0045644B1 (show.php) |
| JP (1) | JPH0258787B2 (show.php) |
| DE (1) | DE3176025D1 (show.php) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5954228A (ja) * | 1982-09-22 | 1984-03-29 | Toshiba Corp | 化合物半導体の陽極酸化装置 |
| JPS60249337A (ja) * | 1984-05-24 | 1985-12-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6467964A (en) * | 1987-09-08 | 1989-03-14 | Mitsubishi Electric Corp | Multilayer electrode structure |
| JP3278951B2 (ja) * | 1992-10-23 | 2002-04-30 | ソニー株式会社 | オーミック電極の形成方法 |
| JP2009206357A (ja) * | 2008-02-28 | 2009-09-10 | Asahi Kasei Electronics Co Ltd | 化合物半導体装置及び化合物半導体装置の製造方法 |
| TWI693642B (zh) * | 2017-12-22 | 2020-05-11 | 美商雷森公司 | 用於控制具有將由設置在半導體上的結構所吸收的預定波長之輻射量的方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1469953A (en) * | 1973-05-18 | 1977-04-14 | Philips Electronic Associated | Semiconductor devices |
| JPS5141473A (en) * | 1974-10-01 | 1976-04-07 | Berumanto Futsuzu Nv | Merengeseihin oyobi sonoruijibutsu |
| US4000508A (en) * | 1975-07-17 | 1976-12-28 | Honeywell Inc. | Ohmic contacts to p-type mercury cadmium telluride |
-
1981
- 1981-07-31 EP EP81303521A patent/EP0045644B1/en not_active Expired
- 1981-07-31 DE DE8181303521T patent/DE3176025D1/de not_active Expired
- 1981-08-04 JP JP56122353A patent/JPH0258787B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0045644A3 (en) | 1984-02-08 |
| EP0045644A2 (en) | 1982-02-10 |
| JPS5753932A (show.php) | 1982-03-31 |
| DE3176025D1 (en) | 1987-04-23 |
| EP0045644B1 (en) | 1987-03-18 |
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