GB1469953A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1469953A
GB1469953A GB2149274A GB2149274A GB1469953A GB 1469953 A GB1469953 A GB 1469953A GB 2149274 A GB2149274 A GB 2149274A GB 2149274 A GB2149274 A GB 2149274A GB 1469953 A GB1469953 A GB 1469953A
Authority
GB
United Kingdom
Prior art keywords
gaas
semi
component
conductor
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2149274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7318112A external-priority patent/FR2185373B1/fr
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1469953A publication Critical patent/GB1469953A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1469953 Ohmic contacts for semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 15 May 1974 [18 May 1973] 21492/74 Heading H1K A region of a III-V compound semi-conductor body having a net majority dopant concentration of lower than 10<SP>17</SP> atoms/cm.<SP>3</SP> is provided with an ohmic contact comprising a main component of Al, Ta, Ti or Zr and a second component of Zn, Be, Mg, Cd, Si, Ge, Sn, S, Se or Te, the material selected for the second component being capable of inducing the same conductivity type in the contact-bearing region as the majority dopant thereof. During a heating step following deposition of the two contact elements, e.g. from a common evaporation source, the second element forms a shallow diffused zone in the semi-conductor surface sufficient in depth and concentration to compensate the inversion layer inherently present in such low-doped material. Particular combinations for use with GaAs or GaAs x P 1-x (x=0À8-1) are Al/Zn, Al/Be or Al/Te, preferred compositions and treatment conditions being specified. When the main component is Ti it is preferably covered with Au. GaP electroluminescent diodes and GaAs Gunn devices are particularly referred to.
GB2149274A 1973-05-18 1974-05-15 Semiconductor devices Expired GB1469953A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7318112A FR2185373B1 (en) 1972-05-19 1973-05-18

Publications (1)

Publication Number Publication Date
GB1469953A true GB1469953A (en) 1977-04-14

Family

ID=9119557

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2149274A Expired GB1469953A (en) 1973-05-18 1974-05-15 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB1469953A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045644A2 (en) * 1980-08-04 1982-02-10 Santa Barbara Research Center Metallic contacts to compound semiconductor devices
EP0093971A2 (en) * 1982-04-28 1983-11-16 Kabushiki Kaisha Toshiba Semiconductor device having an interstitial transition element layer and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045644A2 (en) * 1980-08-04 1982-02-10 Santa Barbara Research Center Metallic contacts to compound semiconductor devices
EP0045644A3 (en) * 1980-08-04 1984-02-08 Santa Barbara Research Center Metallic contacts to compound semiconductor devices
EP0093971A2 (en) * 1982-04-28 1983-11-16 Kabushiki Kaisha Toshiba Semiconductor device having an interstitial transition element layer and method of manufacturing the same
EP0093971A3 (en) * 1982-04-28 1985-01-30 Kabushiki Kaisha Toshiba Semiconductor device having an interstitial transition element layer and method of manufacturing the same

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee