JPH0258778B2 - - Google Patents
Info
- Publication number
- JPH0258778B2 JPH0258778B2 JP56153242A JP15324281A JPH0258778B2 JP H0258778 B2 JPH0258778 B2 JP H0258778B2 JP 56153242 A JP56153242 A JP 56153242A JP 15324281 A JP15324281 A JP 15324281A JP H0258778 B2 JPH0258778 B2 JP H0258778B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- forming
- nitride film
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 230000003647 oxidation Effects 0.000 claims description 20
- 238000007254 oxidation reaction Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 238000005530 etching Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000002955 isolation Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15324281A JPS5854651A (ja) | 1981-09-28 | 1981-09-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15324281A JPS5854651A (ja) | 1981-09-28 | 1981-09-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5854651A JPS5854651A (ja) | 1983-03-31 |
| JPH0258778B2 true JPH0258778B2 (de) | 1990-12-10 |
Family
ID=15558160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15324281A Granted JPS5854651A (ja) | 1981-09-28 | 1981-09-28 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5854651A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620028A (ja) * | 1992-06-29 | 1994-01-28 | Honda Motor Co Ltd | 車載用ｅｃｕ装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124141A (ja) * | 1982-12-28 | 1984-07-18 | Toshiba Corp | 半導体装置の製造方法 |
| US5084413A (en) * | 1986-04-15 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Method for filling contact hole |
| US5472903A (en) * | 1994-05-24 | 1995-12-05 | United Microelectronics Corp. | Isolation technology for sub-micron devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54589A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Burying method of insulator |
-
1981
- 1981-09-28 JP JP15324281A patent/JPS5854651A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54589A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Burying method of insulator |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620028A (ja) * | 1992-06-29 | 1994-01-28 | Honda Motor Co Ltd | 車載用ｅｃｕ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5854651A (ja) | 1983-03-31 |
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