JPH025307B2 - - Google Patents

Info

Publication number
JPH025307B2
JPH025307B2 JP58038579A JP3857983A JPH025307B2 JP H025307 B2 JPH025307 B2 JP H025307B2 JP 58038579 A JP58038579 A JP 58038579A JP 3857983 A JP3857983 A JP 3857983A JP H025307 B2 JPH025307 B2 JP H025307B2
Authority
JP
Japan
Prior art keywords
type
layer
cathode
electrode
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58038579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59163867A (ja
Inventor
Futoshi Tokuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58038579A priority Critical patent/JPS59163867A/ja
Publication of JPS59163867A publication Critical patent/JPS59163867A/ja
Publication of JPH025307B2 publication Critical patent/JPH025307B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Thyristors (AREA)
JP58038579A 1983-03-07 1983-03-07 ゲ−トタ−ンオフサイリスタ Granted JPS59163867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58038579A JPS59163867A (ja) 1983-03-07 1983-03-07 ゲ−トタ−ンオフサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58038579A JPS59163867A (ja) 1983-03-07 1983-03-07 ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS59163867A JPS59163867A (ja) 1984-09-14
JPH025307B2 true JPH025307B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-01

Family

ID=12529198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58038579A Granted JPS59163867A (ja) 1983-03-07 1983-03-07 ゲ−トタ−ンオフサイリスタ

Country Status (1)

Country Link
JP (1) JPS59163867A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214471A (ja) * 1985-03-19 1986-09-24 Res Dev Corp Of Japan ゲ−ト制御半導体装置
JPS6269557A (ja) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPH0624120U (ja) * 1992-08-12 1994-03-29 株式会社イナバエクステリア 軒下用日除け
JPH0624119U (ja) * 1992-08-12 1994-03-29 株式会社イナバエクステリア 軒下用日除け

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112465U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-03-06 1976-09-11

Also Published As

Publication number Publication date
JPS59163867A (ja) 1984-09-14

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