JPH0252890B2 - - Google Patents
Info
- Publication number
- JPH0252890B2 JPH0252890B2 JP57098181A JP9818182A JPH0252890B2 JP H0252890 B2 JPH0252890 B2 JP H0252890B2 JP 57098181 A JP57098181 A JP 57098181A JP 9818182 A JP9818182 A JP 9818182A JP H0252890 B2 JPH0252890 B2 JP H0252890B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- potential
- signal
- vcc
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 9
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Manipulation Of Pulses (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57098181A JPS5839117A (ja) | 1982-06-07 | 1982-06-07 | Mosトランジスタ駆動回路 |
US06/412,378 US4536859A (en) | 1981-08-31 | 1982-08-27 | Cross-coupled inverters static random access memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57098181A JPS5839117A (ja) | 1982-06-07 | 1982-06-07 | Mosトランジスタ駆動回路 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56137924A Division JPS5841488A (ja) | 1981-08-31 | 1981-08-31 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5839117A JPS5839117A (ja) | 1983-03-07 |
JPH0252890B2 true JPH0252890B2 (zh) | 1990-11-15 |
Family
ID=14212848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57098181A Granted JPS5839117A (ja) | 1981-08-31 | 1982-06-07 | Mosトランジスタ駆動回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5839117A (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59231914A (ja) * | 1983-06-15 | 1984-12-26 | Nec Corp | クロツク信号発生回路 |
JPS60224329A (ja) * | 1984-04-20 | 1985-11-08 | Sharp Corp | Mos集積回路素子の入力回路 |
JPS6116096A (ja) * | 1984-07-03 | 1986-01-24 | Nec Corp | クロツク信号発生回路 |
US5197033A (en) | 1986-07-18 | 1993-03-23 | Hitachi, Ltd. | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
JPS6225966A (ja) * | 1985-07-25 | 1987-02-03 | Mizuta Shiyubiyouen:Kk | 葉ねぎの赤葉除去機 |
US5694074A (en) * | 1994-10-31 | 1997-12-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit being able to generate sufficient boost potential disregarding generation of noise |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5457857A (en) * | 1977-09-26 | 1979-05-10 | Philips Nv | Buffer circuit |
JPS55136723A (en) * | 1979-04-11 | 1980-10-24 | Mitsubishi Electric Corp | Booster circuit |
-
1982
- 1982-06-07 JP JP57098181A patent/JPS5839117A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5457857A (en) * | 1977-09-26 | 1979-05-10 | Philips Nv | Buffer circuit |
JPS55136723A (en) * | 1979-04-11 | 1980-10-24 | Mitsubishi Electric Corp | Booster circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS5839117A (ja) | 1983-03-07 |
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