JPH0252890B2 - - Google Patents

Info

Publication number
JPH0252890B2
JPH0252890B2 JP57098181A JP9818182A JPH0252890B2 JP H0252890 B2 JPH0252890 B2 JP H0252890B2 JP 57098181 A JP57098181 A JP 57098181A JP 9818182 A JP9818182 A JP 9818182A JP H0252890 B2 JPH0252890 B2 JP H0252890B2
Authority
JP
Japan
Prior art keywords
mos transistor
potential
signal
vcc
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57098181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5839117A (ja
Inventor
Setsushi Kamuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57098181A priority Critical patent/JPS5839117A/ja
Priority to US06/412,378 priority patent/US4536859A/en
Publication of JPS5839117A publication Critical patent/JPS5839117A/ja
Publication of JPH0252890B2 publication Critical patent/JPH0252890B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP57098181A 1981-08-31 1982-06-07 Ｍｏｓトランジスタ駆動回路 Granted JPS5839117A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57098181A JPS5839117A (ja) 1982-06-07 1982-06-07 Ｍｏｓトランジスタ駆動回路
US06/412,378 US4536859A (en) 1981-08-31 1982-08-27 Cross-coupled inverters static random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57098181A JPS5839117A (ja) 1982-06-07 1982-06-07 Ｍｏｓトランジスタ駆動回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56137924A Division JPS5841488A (ja) 1981-08-31 1981-08-31 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS5839117A JPS5839117A (ja) 1983-03-07
JPH0252890B2 true JPH0252890B2 (zh) 1990-11-15

Family

ID=14212848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57098181A Granted JPS5839117A (ja) 1981-08-31 1982-06-07 Ｍｏｓトランジスタ駆動回路

Country Status (1)

Country Link
JP (1) JPS5839117A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231914A (ja) * 1983-06-15 1984-12-26 Nec Corp クロツク信号発生回路
JPS60224329A (ja) * 1984-04-20 1985-11-08 Sharp Corp Ｍｏｓ集積回路素子の入力回路
JPS6116096A (ja) * 1984-07-03 1986-01-24 Nec Corp クロツク信号発生回路
US5197033A (en) * 1986-07-18 1993-03-23 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
JPS6225966A (ja) * 1985-07-25 1987-02-03 Mizuta Shiyubiyouen:Kk 葉ねぎの赤葉除去機
US5694074A (en) * 1994-10-31 1997-12-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit being able to generate sufficient boost potential disregarding generation of noise

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457857A (en) * 1977-09-26 1979-05-10 Philips Nv Buffer circuit
JPS55136723A (en) * 1979-04-11 1980-10-24 Mitsubishi Electric Corp Booster circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457857A (en) * 1977-09-26 1979-05-10 Philips Nv Buffer circuit
JPS55136723A (en) * 1979-04-11 1980-10-24 Mitsubishi Electric Corp Booster circuit

Also Published As

Publication number Publication date
JPS5839117A (ja) 1983-03-07

Similar Documents

Publication Publication Date Title
CN1091974C (zh) 升压脉冲产生电路
US4342101A (en) Nonvolatile semiconductor memory circuits
EP0098060B1 (en) Clock pulse generating circuit
US4176289A (en) Driving circuit for integrated circuit semiconductor memory
US4536859A (en) Cross-coupled inverters static random access memory
EP0090632B1 (en) Static-type random-access memory device
EP0151248A2 (en) High voltage circuit
US6249477B1 (en) Semiconductor memory device
JP2003249088A (ja) チャージポンプ回路
US4336465A (en) Reset circuit
JPH0252890B2 (zh)
US5175448A (en) Booster circuit
EP0083195A2 (en) Decoder circuit for a semiconductor device
US5327376A (en) Static memory cell
JPH0516119B2 (zh)
GB2118797A (en) Non-volatile memory circuit
JP4243027B2 (ja) 改良されたワードラインブースト回路
JPS6149758B2 (zh)
JPH05298884A (ja) 半導体記憶装置
JPS6043585B2 (ja) 半導体集積回路
JPH0237633B2 (zh)
JPS6220634B2 (zh)
JPH11176153A (ja) 半導体集積回路
JPS6032913B2 (ja) アドレス選択回路
JPS60154393A (ja) 半導体記憶装置