JPH0251269B2 - - Google Patents

Info

Publication number
JPH0251269B2
JPH0251269B2 JP9219084A JP9219084A JPH0251269B2 JP H0251269 B2 JPH0251269 B2 JP H0251269B2 JP 9219084 A JP9219084 A JP 9219084A JP 9219084 A JP9219084 A JP 9219084A JP H0251269 B2 JPH0251269 B2 JP H0251269B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
semiconductor
current
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9219084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60235484A (ja
Inventor
Hiroshi Ishikawa
Yorimitsu Nishitani
Yoshasu Sugano
Ganzo Iwane
Yoshinori Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP59092190A priority Critical patent/JPS60235484A/ja
Publication of JPS60235484A publication Critical patent/JPS60235484A/ja
Publication of JPH0251269B2 publication Critical patent/JPH0251269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP59092190A 1984-05-09 1984-05-09 半導体発光装置 Granted JPS60235484A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59092190A JPS60235484A (ja) 1984-05-09 1984-05-09 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59092190A JPS60235484A (ja) 1984-05-09 1984-05-09 半導体発光装置

Publications (2)

Publication Number Publication Date
JPS60235484A JPS60235484A (ja) 1985-11-22
JPH0251269B2 true JPH0251269B2 (enrdf_load_stackoverflow) 1990-11-06

Family

ID=14047514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59092190A Granted JPS60235484A (ja) 1984-05-09 1984-05-09 半導体発光装置

Country Status (1)

Country Link
JP (1) JPS60235484A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62283686A (ja) * 1986-05-31 1987-12-09 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS63211788A (ja) * 1987-02-27 1988-09-02 Mitsubishi Electric Corp 半導体レ−ザおよびその製造方法
US4929571A (en) * 1987-02-27 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Method of making a buried crescent laser with air gap insulator

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1981 *
APPLIED PHYSICS LETTERS=1982 *
APPLIED PHYSICS LETTERS=1983 *

Also Published As

Publication number Publication date
JPS60235484A (ja) 1985-11-22

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