JPS60235484A - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JPS60235484A
JPS60235484A JP59092190A JP9219084A JPS60235484A JP S60235484 A JPS60235484 A JP S60235484A JP 59092190 A JP59092190 A JP 59092190A JP 9219084 A JP9219084 A JP 9219084A JP S60235484 A JPS60235484 A JP S60235484A
Authority
JP
Japan
Prior art keywords
semiconductor layer
current
layer
semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59092190A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0251269B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Ishikawa
浩 石川
Yorimitsu Nishitani
西谷　頼光
Yoshiyasu Sugano
菅野　好泰
Ganzo Iwane
岩根　眼蔵
Yoshinori Nakano
中野　好典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP59092190A priority Critical patent/JPS60235484A/ja
Publication of JPS60235484A publication Critical patent/JPS60235484A/ja
Publication of JPH0251269B2 publication Critical patent/JPH0251269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP59092190A 1984-05-09 1984-05-09 半導体発光装置 Granted JPS60235484A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59092190A JPS60235484A (ja) 1984-05-09 1984-05-09 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59092190A JPS60235484A (ja) 1984-05-09 1984-05-09 半導体発光装置

Publications (2)

Publication Number Publication Date
JPS60235484A true JPS60235484A (ja) 1985-11-22
JPH0251269B2 JPH0251269B2 (enrdf_load_stackoverflow) 1990-11-06

Family

ID=14047514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59092190A Granted JPS60235484A (ja) 1984-05-09 1984-05-09 半導体発光装置

Country Status (1)

Country Link
JP (1) JPS60235484A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758535A (en) * 1986-05-31 1988-07-19 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor laser
US4847845A (en) * 1987-02-27 1989-07-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser with an interposed gap
US4929571A (en) * 1987-02-27 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Method of making a buried crescent laser with air gap insulator

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1981 *
APPLIED PHYSICS LETTERS=1982 *
APPLIED PHYSICS LETTERS=1983 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758535A (en) * 1986-05-31 1988-07-19 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor laser
US4847845A (en) * 1987-02-27 1989-07-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser with an interposed gap
US4929571A (en) * 1987-02-27 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Method of making a buried crescent laser with air gap insulator

Also Published As

Publication number Publication date
JPH0251269B2 (enrdf_load_stackoverflow) 1990-11-06

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