JPH0247537U - - Google Patents
Info
- Publication number
- JPH0247537U JPH0247537U JP12594888U JP12594888U JPH0247537U JP H0247537 U JPH0247537 U JP H0247537U JP 12594888 U JP12594888 U JP 12594888U JP 12594888 U JP12594888 U JP 12594888U JP H0247537 U JPH0247537 U JP H0247537U
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- strain
- strain gauge
- receiving
- generating part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図及び第２図は本考案の実施例に係り、第
１図は圧力センサの縦断面図、第２図は第１図中
の―矢示方向断面図、第３図及び第４図は従
来技術に係り、第３図は圧力センサの縦断面図、
第４図は第３図中の―矢示方向断面図である
。
２１……ダイヤフラム、２１Ｂ……起歪部、２
１Ｂ１……受圧面、２１Ｂ２……シリコン貼着面
、２２……拡散型歪ゲージ、２３……単結晶シリ
コンウエハ。
1 and 2 relate to an embodiment of the present invention, in which FIG. 1 is a longitudinal sectional view of a pressure sensor, FIG. 2 is a sectional view in the direction of the - arrow in FIG. 1, and FIGS. 3 and 4. relates to the prior art, and FIG. 3 is a longitudinal cross-sectional view of a pressure sensor;
FIG. 4 is a sectional view in the direction of the - arrow in FIG. 3. 21...Diaphragm, 21B...Strain-generating portion, 2
1B 1 ...Pressure receiving surface, 21B2 ...Silicon adhesion surface, 22...Diffusion type strain gauge, 23...Single crystal silicon wafer.
Claims (1)
リコン貼着面になつた起歪部を有する受圧ダイヤ
フラムと、該受圧ダイヤフラムの起歪部に固着さ
れた歪ゲージとからなり、該歪ゲージは前記シリ
コン貼着面に貼着した単結晶シリコンウエハに不
純物を拡散した拡散型歪ゲージに構成してなる圧
力センサ。 The strain gauge consists of a pressure receiving diaphragm having a strain-generating part, with one side serving as a pressure-receiving surface receiving fluid pressure and the other side serving as a silicon bonding surface, and a strain gauge fixed to the strain-generating part of the pressure-receiving diaphragm. A pressure sensor configured as a diffusion type strain gauge in which impurities are diffused into a single crystal silicon wafer bonded to the silicon bonding surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12594888U JPH0247537U (en) | 1988-09-27 | 1988-09-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12594888U JPH0247537U (en) | 1988-09-27 | 1988-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0247537U true JPH0247537U (en) | 1990-03-30 |
Family
ID=31377009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12594888U Pending JPH0247537U (en) | 1988-09-27 | 1988-09-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0247537U (en) |
-
1988
- 1988-09-27 JP JP12594888U patent/JPH0247537U/ja active Pending