JPH0295831U - - Google Patents
Info
- Publication number
- JPH0295831U JPH0295831U JP489589U JP489589U JPH0295831U JP H0295831 U JPH0295831 U JP H0295831U JP 489589 U JP489589 U JP 489589U JP 489589 U JP489589 U JP 489589U JP H0295831 U JPH0295831 U JP H0295831U
- Authority
- JP
- Japan
- Prior art keywords
- hole
- strain gauge
- terminal cover
- insulating film
- external connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図及び第２図は本考案の実施例に係り、第
１図は第２図中の―矢示方向から示す圧力セ
ンサの断面図、第２図は圧力センサの平面図、第
３図及び第４図は従来技術に係り、第３図は第４
図中の―矢示方向から示す圧力センサの断面
図、第４図は圧力センサの平面図である。
２１…ダイヤフラム、２１Ｂ…起歪部、２３…
絶縁膜、２４…半導体歪ゲージ、２５…電極、２
６…ターミナルカバー、２７…貫通孔、２８…外
部接続用パツド、２９…スルーホールパツド。
1 and 2 relate to an embodiment of the present invention, in which FIG. 1 is a sectional view of the pressure sensor taken from the - arrow direction in FIG. 2, FIG. 2 is a plan view of the pressure sensor, and FIG. and FIG. 4 relate to the prior art, and FIG.
FIG. 4 is a sectional view of the pressure sensor taken from the direction indicated by the - arrow in the figure, and FIG. 4 is a plan view of the pressure sensor. 21...Diaphragm, 21B...Strain-generating portion, 23...
Insulating film, 24... Semiconductor strain gauge, 25... Electrode, 2
6...Terminal cover, 27...Through hole, 28...External connection pad, 29...Through hole pad.
Claims (1)
ムの起歪部上に絶縁膜を介して配設された半導体
歪ゲージと、該半導体歪ゲージに接続して前記絶
縁膜上に形成された電極と、前記半導体歪ゲージ
を覆うように前記ダイヤフラム又は絶縁膜に固着
されたターミナルカバーと、前記半導体歪ゲージ
の電極に対応して該ターミナルカバーの外面側か
ら内面側にかけて開口形成された貫通孔と、該貫
通孔の近傍に位置して前記ターミナルカバーの外
面側に形成された外部接続用パツドと、該外部接
続用パツドと前記電極とを接続すべく、前記貫通
孔を介して前記ターミナルカバーの外面側から内
面側に形成されたスルーホールパツドとから構成
してなる応力センサ。 a diaphragm having a strain-generating portion; a semiconductor strain gauge disposed on the strain-generating portion of the diaphragm via an insulating film; an electrode connected to the semiconductor strain gauge and formed on the insulating film; a terminal cover fixed to the diaphragm or insulating film so as to cover the semiconductor strain gauge; a through hole formed from the outer surface to the inner surface of the terminal cover corresponding to the electrode of the semiconductor strain gauge; An external connection pad located near the hole and formed on the outer surface of the terminal cover, and an external connection pad formed on the outer surface of the terminal cover through the through hole to connect the external connection pad and the electrode. A stress sensor consisting of a through-hole pad formed on the inner surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP489589U JPH0295831U (en) | 1989-01-19 | 1989-01-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP489589U JPH0295831U (en) | 1989-01-19 | 1989-01-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0295831U true JPH0295831U (en) | 1990-07-31 |
Family
ID=31207807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP489589U Pending JPH0295831U (en) | 1989-01-19 | 1989-01-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0295831U (en) |
-
1989
- 1989-01-19 JP JP489589U patent/JPH0295831U/ja active Pending