JPH0246047Y2 - - Google Patents
Info
- Publication number
- JPH0246047Y2 JPH0246047Y2 JP108384U JP108384U JPH0246047Y2 JP H0246047 Y2 JPH0246047 Y2 JP H0246047Y2 JP 108384 U JP108384 U JP 108384U JP 108384 U JP108384 U JP 108384U JP H0246047 Y2 JPH0246047 Y2 JP H0246047Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- quartz reaction
- fan
- furnace body
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP108384U JPS60113629U (ja) | 1984-01-09 | 1984-01-09 | 急冷機構付結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP108384U JPS60113629U (ja) | 1984-01-09 | 1984-01-09 | 急冷機構付結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60113629U JPS60113629U (ja) | 1985-08-01 |
| JPH0246047Y2 true JPH0246047Y2 (enrdf_load_stackoverflow) | 1990-12-05 |
Family
ID=30473500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP108384U Granted JPS60113629U (ja) | 1984-01-09 | 1984-01-09 | 急冷機構付結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60113629U (enrdf_load_stackoverflow) |
-
1984
- 1984-01-09 JP JP108384U patent/JPS60113629U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60113629U (ja) | 1985-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0246047Y2 (enrdf_load_stackoverflow) | ||
| JPS6160819A (ja) | 焼入れ冷却方法 | |
| JPS62140413A (ja) | 縦型拡散装置 | |
| JP3023967B2 (ja) | 熱処理装置 | |
| JPH04243126A (ja) | 半導体製造装置及びその制御方法 | |
| JPS58219733A (ja) | 半導体の熱処理方法 | |
| JPS63116435A (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JP2508687Y2 (ja) | 熱処理炉 | |
| JPS5856341A (ja) | 熱処理方法および熱処理装置 | |
| JPH06124955A (ja) | 高温真空加熱炉及びその冷却方法 | |
| JP3364055B2 (ja) | 基板冷却装置 | |
| JPS63166218A (ja) | 半導体熱処理装置のウエ−ハ冷却方法 | |
| JPH08195351A (ja) | 半導体反応炉 | |
| JPH01243515A (ja) | 熱処理装置 | |
| JPH06260486A (ja) | 熱処理方法及び熱処理装置 | |
| JPH0468520A (ja) | 熱処理炉 | |
| JPH0346235A (ja) | ウェーハの冷却装置 | |
| CN120231133A (zh) | 扩散炉、扩散系统以及扩散方法 | |
| JPH043495Y2 (enrdf_load_stackoverflow) | ||
| JPH0628734Y2 (ja) | 竪型連続架橋装置 | |
| JPH06349749A (ja) | 半導体製造装置 | |
| JPH07326591A (ja) | 縦型炉 | |
| JPS63176329A (ja) | 光フアイバ線引装置 | |
| JPS6117490A (ja) | 半導体液相エピタキシヤル成長装置および方法 | |
| JPS6320823A (ja) | 半導体用熱処理炉 |