JPH0243333B2 - - Google Patents
Info
- Publication number
- JPH0243333B2 JPH0243333B2 JP55066769A JP6676980A JPH0243333B2 JP H0243333 B2 JPH0243333 B2 JP H0243333B2 JP 55066769 A JP55066769 A JP 55066769A JP 6676980 A JP6676980 A JP 6676980A JP H0243333 B2 JPH0243333 B2 JP H0243333B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- plane
- silicon single
- surfactant
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6676980A JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6676980A JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56162839A JPS56162839A (en) | 1981-12-15 |
| JPH0243333B2 true JPH0243333B2 (cg-RX-API-DMAC7.html) | 1990-09-28 |
Family
ID=13325408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6676980A Granted JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56162839A (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855323A (ja) * | 1981-09-26 | 1983-04-01 | Toshiba Corp | シリコン及びシリコン酸化膜の腐食液 |
| KR100612985B1 (ko) * | 1998-03-12 | 2006-10-31 | 삼성전자주식회사 | 액정 표시 장치의 제조 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548696B2 (cg-RX-API-DMAC7.html) * | 1974-04-15 | 1980-12-08 | ||
| JPS50147281A (cg-RX-API-DMAC7.html) * | 1974-05-15 | 1975-11-26 |
-
1980
- 1980-05-19 JP JP6676980A patent/JPS56162839A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56162839A (en) | 1981-12-15 |
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