JPH0239868B2 - - Google Patents

Info

Publication number
JPH0239868B2
JPH0239868B2 JP58225814A JP22581483A JPH0239868B2 JP H0239868 B2 JPH0239868 B2 JP H0239868B2 JP 58225814 A JP58225814 A JP 58225814A JP 22581483 A JP22581483 A JP 22581483A JP H0239868 B2 JPH0239868 B2 JP H0239868B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
layer
channel
gate
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58225814A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60117766A (ja
Inventor
Yoshuki Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58225814A priority Critical patent/JPS60117766A/ja
Priority to US06/675,768 priority patent/US4716131A/en
Publication of JPS60117766A publication Critical patent/JPS60117766A/ja
Publication of JPH0239868B2 publication Critical patent/JPH0239868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10P14/6308—
    • H10W20/066—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP58225814A 1983-11-28 1983-11-30 半導体装置 Granted JPS60117766A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58225814A JPS60117766A (ja) 1983-11-30 1983-11-30 半導体装置
US06/675,768 US4716131A (en) 1983-11-28 1984-11-28 Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58225814A JPS60117766A (ja) 1983-11-30 1983-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS60117766A JPS60117766A (ja) 1985-06-25
JPH0239868B2 true JPH0239868B2 (en:Method) 1990-09-07

Family

ID=16835209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58225814A Granted JPS60117766A (ja) 1983-11-28 1983-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS60117766A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204628A (ja) * 1987-02-19 1988-08-24 Nec Corp 半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor
JPS56137675A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and manufacture thereof
JPS58191467A (ja) * 1982-04-30 1983-11-08 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60117766A (ja) 1985-06-25

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