JPH0237692B2 - - Google Patents
Info
- Publication number
- JPH0237692B2 JPH0237692B2 JP59171538A JP17153884A JPH0237692B2 JP H0237692 B2 JPH0237692 B2 JP H0237692B2 JP 59171538 A JP59171538 A JP 59171538A JP 17153884 A JP17153884 A JP 17153884A JP H0237692 B2 JPH0237692 B2 JP H0237692B2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- source element
- beam source
- radiation
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17153884A JPS6150326A (ja) | 1984-08-20 | 1984-08-20 | 半導体結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17153884A JPS6150326A (ja) | 1984-08-20 | 1984-08-20 | 半導体結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6150326A JPS6150326A (ja) | 1986-03-12 |
| JPH0237692B2 true JPH0237692B2 (enExample) | 1990-08-27 |
Family
ID=15924978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17153884A Granted JPS6150326A (ja) | 1984-08-20 | 1984-08-20 | 半導体結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6150326A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6057611A (ja) * | 1983-08-09 | 1985-04-03 | Fujitsu Ltd | 分子線源シヤツタ |
| JPH078755B2 (ja) * | 1987-05-28 | 1995-02-01 | 日本電子株式会社 | 分子線エピタキシ−装置 |
| TW200805015A (en) | 2006-07-12 | 2008-01-16 | Micro Star Int Co Ltd | Method of volume controlling |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54122766U (enExample) * | 1978-02-15 | 1979-08-28 | ||
| JPS54162454A (en) * | 1978-06-14 | 1979-12-24 | Fujitsu Ltd | Molecular beam generating unit |
| JPS57156031A (en) * | 1981-03-20 | 1982-09-27 | Matsushita Electric Ind Co Ltd | Formation of thin film and vacuum deposition device |
-
1984
- 1984-08-20 JP JP17153884A patent/JPS6150326A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6150326A (ja) | 1986-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5693146A (en) | Device for forming a compound oxide superconducting thin film | |
| US5074246A (en) | Device to cover a flat surface with a layer of uniform thickness | |
| JPH0237692B2 (enExample) | ||
| JPH03208887A (ja) | 分子線エピタキシャル成長方法 | |
| KR20060040827A (ko) | 증착 방법 및 이를 위한 증착 장치 | |
| JPS61271817A (ja) | 分子線エピタキシ−装置 | |
| KR20040040604A (ko) | 박막 증착 방법 및 그 장치 | |
| JPS6270568A (ja) | スパツタ方法 | |
| JP2001040475A (ja) | ターゲットホルダー構造 | |
| JPS63297549A (ja) | 真空蒸着装置 | |
| JP2772533B2 (ja) | 薄膜成長方法 | |
| KR100251349B1 (ko) | 레이저 다이오드의 거울면 코팅 방법 | |
| US6254934B1 (en) | Method for controlled deposition of mirror layers | |
| JPS60225421A (ja) | 分子線エピタキシ−用蒸発源ルツボ | |
| JPS63192860A (ja) | 蒸着用ボ−ト | |
| JPH05339711A (ja) | 真空蒸着装置 | |
| JPH06272028A (ja) | 薄膜作製方法およびその装置 | |
| JPS63937B2 (enExample) | ||
| JPH01319673A (ja) | レーザビームスパッタ法 | |
| JPS62219511A (ja) | 分子線発生装置 | |
| KR100393184B1 (ko) | 펄스파레이저증착법을이용한고온초전도박막제조장치및그방법 | |
| JPH02305438A (ja) | 真空蒸着装置 | |
| JPS6255919A (ja) | 分子線結晶成長装置 | |
| KR100755339B1 (ko) | 대면적 기판의 박막 균일도 조절이 가능한 진공증발원 | |
| KR200420182Y1 (ko) | 대면적 기판의 박막 균일도 조절이 가능한 진공증발원 |