JPS6150326A - 半導体結晶成長装置 - Google Patents

半導体結晶成長装置

Info

Publication number
JPS6150326A
JPS6150326A JP17153884A JP17153884A JPS6150326A JP S6150326 A JPS6150326 A JP S6150326A JP 17153884 A JP17153884 A JP 17153884A JP 17153884 A JP17153884 A JP 17153884A JP S6150326 A JPS6150326 A JP S6150326A
Authority
JP
Japan
Prior art keywords
molecular beam
source element
beam source
reflection
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17153884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237692B2 (enExample
Inventor
Akihiro Shibatomi
昭洋 柴富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17153884A priority Critical patent/JPS6150326A/ja
Publication of JPS6150326A publication Critical patent/JPS6150326A/ja
Publication of JPH0237692B2 publication Critical patent/JPH0237692B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP17153884A 1984-08-20 1984-08-20 半導体結晶成長装置 Granted JPS6150326A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17153884A JPS6150326A (ja) 1984-08-20 1984-08-20 半導体結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17153884A JPS6150326A (ja) 1984-08-20 1984-08-20 半導体結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6150326A true JPS6150326A (ja) 1986-03-12
JPH0237692B2 JPH0237692B2 (enExample) 1990-08-27

Family

ID=15924978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17153884A Granted JPS6150326A (ja) 1984-08-20 1984-08-20 半導体結晶成長装置

Country Status (1)

Country Link
JP (1) JPS6150326A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057611A (ja) * 1983-08-09 1985-04-03 Fujitsu Ltd 分子線源シヤツタ
JPS63297294A (ja) * 1987-05-28 1988-12-05 Jeol Ltd 分子線エピタキシ−装置
US7907739B2 (en) 2006-07-12 2011-03-15 Micro-Star Int'l Co., Ltd. Method of volume controlling

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122766U (enExample) * 1978-02-15 1979-08-28
JPS54162454A (en) * 1978-06-14 1979-12-24 Fujitsu Ltd Molecular beam generating unit
JPS57156031A (en) * 1981-03-20 1982-09-27 Matsushita Electric Ind Co Ltd Formation of thin film and vacuum deposition device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122766U (enExample) * 1978-02-15 1979-08-28
JPS54162454A (en) * 1978-06-14 1979-12-24 Fujitsu Ltd Molecular beam generating unit
JPS57156031A (en) * 1981-03-20 1982-09-27 Matsushita Electric Ind Co Ltd Formation of thin film and vacuum deposition device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057611A (ja) * 1983-08-09 1985-04-03 Fujitsu Ltd 分子線源シヤツタ
JPS63297294A (ja) * 1987-05-28 1988-12-05 Jeol Ltd 分子線エピタキシ−装置
US7907739B2 (en) 2006-07-12 2011-03-15 Micro-Star Int'l Co., Ltd. Method of volume controlling

Also Published As

Publication number Publication date
JPH0237692B2 (enExample) 1990-08-27

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