JPH0237692B2 - - Google Patents

Info

Publication number
JPH0237692B2
JPH0237692B2 JP59171538A JP17153884A JPH0237692B2 JP H0237692 B2 JPH0237692 B2 JP H0237692B2 JP 59171538 A JP59171538 A JP 59171538A JP 17153884 A JP17153884 A JP 17153884A JP H0237692 B2 JPH0237692 B2 JP H0237692B2
Authority
JP
Japan
Prior art keywords
molecular beam
source element
beam source
radiation
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59171538A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150326A (ja
Inventor
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17153884A priority Critical patent/JPS6150326A/ja
Publication of JPS6150326A publication Critical patent/JPS6150326A/ja
Publication of JPH0237692B2 publication Critical patent/JPH0237692B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP17153884A 1984-08-20 1984-08-20 半導体結晶成長装置 Granted JPS6150326A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17153884A JPS6150326A (ja) 1984-08-20 1984-08-20 半導体結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17153884A JPS6150326A (ja) 1984-08-20 1984-08-20 半導体結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6150326A JPS6150326A (ja) 1986-03-12
JPH0237692B2 true JPH0237692B2 (enrdf_load_stackoverflow) 1990-08-27

Family

ID=15924978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17153884A Granted JPS6150326A (ja) 1984-08-20 1984-08-20 半導体結晶成長装置

Country Status (1)

Country Link
JP (1) JPS6150326A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057611A (ja) * 1983-08-09 1985-04-03 Fujitsu Ltd 分子線源シヤツタ
JPH078755B2 (ja) * 1987-05-28 1995-02-01 日本電子株式会社 分子線エピタキシ−装置
TW200805015A (en) 2006-07-12 2008-01-16 Micro Star Int Co Ltd Method of volume controlling

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122766U (enrdf_load_stackoverflow) * 1978-02-15 1979-08-28
JPS54162454A (en) * 1978-06-14 1979-12-24 Fujitsu Ltd Molecular beam generating unit
JPS57156031A (en) * 1981-03-20 1982-09-27 Matsushita Electric Ind Co Ltd Formation of thin film and vacuum deposition device

Also Published As

Publication number Publication date
JPS6150326A (ja) 1986-03-12

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