JPH0235459B2 - - Google Patents

Info

Publication number
JPH0235459B2
JPH0235459B2 JP56181807A JP18180781A JPH0235459B2 JP H0235459 B2 JPH0235459 B2 JP H0235459B2 JP 56181807 A JP56181807 A JP 56181807A JP 18180781 A JP18180781 A JP 18180781A JP H0235459 B2 JPH0235459 B2 JP H0235459B2
Authority
JP
Japan
Prior art keywords
substrate
layer
substrates
slumping
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56181807A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5884458A (ja
Inventor
Shoichi Kitane
Shigeru Pponjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56181807A priority Critical patent/JPS5884458A/ja
Publication of JPS5884458A publication Critical patent/JPS5884458A/ja
Publication of JPH0235459B2 publication Critical patent/JPH0235459B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP56181807A 1981-11-13 1981-11-13 半導体基板の製造方法 Granted JPS5884458A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56181807A JPS5884458A (ja) 1981-11-13 1981-11-13 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56181807A JPS5884458A (ja) 1981-11-13 1981-11-13 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5884458A JPS5884458A (ja) 1983-05-20
JPH0235459B2 true JPH0235459B2 (enrdf_load_stackoverflow) 1990-08-10

Family

ID=16107182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56181807A Granted JPS5884458A (ja) 1981-11-13 1981-11-13 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5884458A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8501773A (nl) * 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4964370A (enrdf_load_stackoverflow) * 1972-06-21 1974-06-21
JPS5441665A (en) * 1977-09-09 1979-04-03 Mitsubishi Electric Corp Manufacture for semiconductor device

Also Published As

Publication number Publication date
JPS5884458A (ja) 1983-05-20

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