JPH0234164B2 - - Google Patents

Info

Publication number
JPH0234164B2
JPH0234164B2 JP59252723A JP25272384A JPH0234164B2 JP H0234164 B2 JPH0234164 B2 JP H0234164B2 JP 59252723 A JP59252723 A JP 59252723A JP 25272384 A JP25272384 A JP 25272384A JP H0234164 B2 JPH0234164 B2 JP H0234164B2
Authority
JP
Japan
Prior art keywords
chamber
wafer
substrate
light irradiation
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59252723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61129834A (ja
Inventor
Tsutomu Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP59252723A priority Critical patent/JPS61129834A/ja
Publication of JPS61129834A publication Critical patent/JPS61129834A/ja
Publication of JPH0234164B2 publication Critical patent/JPH0234164B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP59252723A 1984-11-28 1984-11-28 光照射型熱処理装置 Granted JPS61129834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59252723A JPS61129834A (ja) 1984-11-28 1984-11-28 光照射型熱処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59252723A JPS61129834A (ja) 1984-11-28 1984-11-28 光照射型熱処理装置

Publications (2)

Publication Number Publication Date
JPS61129834A JPS61129834A (ja) 1986-06-17
JPH0234164B2 true JPH0234164B2 (enrdf_load_stackoverflow) 1990-08-01

Family

ID=17241365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59252723A Granted JPS61129834A (ja) 1984-11-28 1984-11-28 光照射型熱処理装置

Country Status (1)

Country Link
JP (1) JPS61129834A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237927U (enrdf_load_stackoverflow) * 1985-08-27 1987-03-06
DE4407377C2 (de) * 1994-03-05 1996-09-26 Ast Elektronik Gmbh Reaktionskammer eines Schnellheizsystems für die Kurzzeittemperung von Halbleiterscheiben und Verfahren zum Spülen der Reaktionskammer
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US6067931A (en) * 1996-11-04 2000-05-30 General Electric Company Thermal processor for semiconductor wafers
ES2352314T3 (es) * 1999-10-20 2011-02-17 Saint-Gobain Glass France S.A. Dispositivo y procedimiento para atemperar al menos un producto de procesamiento.
ATE481741T1 (de) 1999-10-20 2010-10-15 Saint Gobain Vorrichtung und verfahren zum gleichzeitigen temperieren mehrerer prozessiergüter
TWI365519B (en) * 2003-12-19 2012-06-01 Mattson Tech Canada Inc Apparatuses and methods for suppressing thermally induced motion of a workpiece
JP5630935B2 (ja) * 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
EP3690962A1 (de) * 2019-01-31 2020-08-05 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139363A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Heat treatment method for wafers
JPS5756510U (enrdf_load_stackoverflow) * 1980-09-17 1982-04-02
JPS5832409A (ja) * 1981-08-20 1983-02-25 Seiko Epson Corp 単結晶Ｓｉ膜育成装置

Also Published As

Publication number Publication date
JPS61129834A (ja) 1986-06-17

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