JPS61129834A - 光照射型熱処理装置 - Google Patents
光照射型熱処理装置Info
- Publication number
- JPS61129834A JPS61129834A JP59252723A JP25272384A JPS61129834A JP S61129834 A JPS61129834 A JP S61129834A JP 59252723 A JP59252723 A JP 59252723A JP 25272384 A JP25272384 A JP 25272384A JP S61129834 A JPS61129834 A JP S61129834A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- wafer
- heat treatment
- intermediate member
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 7
- 239000007789 gas Substances 0.000 description 25
- 230000007423 decrease Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59252723A JPS61129834A (ja) | 1984-11-28 | 1984-11-28 | 光照射型熱処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59252723A JPS61129834A (ja) | 1984-11-28 | 1984-11-28 | 光照射型熱処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61129834A true JPS61129834A (ja) | 1986-06-17 |
| JPH0234164B2 JPH0234164B2 (enrdf_load_stackoverflow) | 1990-08-01 |
Family
ID=17241365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59252723A Granted JPS61129834A (ja) | 1984-11-28 | 1984-11-28 | 光照射型熱処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61129834A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237927U (enrdf_load_stackoverflow) * | 1985-08-27 | 1987-03-06 | ||
| DE4407377A1 (de) * | 1994-03-05 | 1995-09-07 | Ast Elektronik Gmbh | Modifizierte Reaktorkammer und verbessertes Spülverfahren für Schnellheizsysteme |
| US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
| WO2001029901A3 (de) * | 1999-10-20 | 2002-11-07 | Siemens Ag | Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts |
| WO2001029902A3 (de) * | 1999-10-20 | 2002-11-07 | Siemens Ag | Vorrichtung und verfahren zum temperieren mehrerer prozessiergüter |
| JP2007519232A (ja) * | 2003-12-19 | 2007-07-12 | マトソン テクノロジー カナダ インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
| JP2013030772A (ja) * | 2003-12-19 | 2013-02-07 | Mattson Technology Canada Inc | 工作物の熱誘起運動を抑制する機器及び装置 |
| EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52139363A (en) * | 1976-05-17 | 1977-11-21 | Hitachi Ltd | Heat treatment method for wafers |
| JPS5756510U (enrdf_load_stackoverflow) * | 1980-09-17 | 1982-04-02 | ||
| JPS5832409A (ja) * | 1981-08-20 | 1983-02-25 | Seiko Epson Corp | 単結晶Ｓｉ膜育成装置 |
-
1984
- 1984-11-28 JP JP59252723A patent/JPS61129834A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52139363A (en) * | 1976-05-17 | 1977-11-21 | Hitachi Ltd | Heat treatment method for wafers |
| JPS5756510U (enrdf_load_stackoverflow) * | 1980-09-17 | 1982-04-02 | ||
| JPS5832409A (ja) * | 1981-08-20 | 1983-02-25 | Seiko Epson Corp | 単結晶Ｓｉ膜育成装置 |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237927U (enrdf_load_stackoverflow) * | 1985-08-27 | 1987-03-06 | ||
| DE4407377A1 (de) * | 1994-03-05 | 1995-09-07 | Ast Elektronik Gmbh | Modifizierte Reaktorkammer und verbessertes Spülverfahren für Schnellheizsysteme |
| US5580830A (en) * | 1994-03-05 | 1996-12-03 | Ast Elekronik | Modified reaction chamber and improved gas flushing method in rapid thermal processing apparatus |
| US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
| EP0840359A3 (en) * | 1996-11-04 | 2002-04-03 | General Electric Company | Thermal processor for semiconductor wafers |
| WO2001029901A3 (de) * | 1999-10-20 | 2002-11-07 | Siemens Ag | Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts |
| WO2001029902A3 (de) * | 1999-10-20 | 2002-11-07 | Siemens Ag | Vorrichtung und verfahren zum temperieren mehrerer prozessiergüter |
| US6703589B1 (en) | 1999-10-20 | 2004-03-09 | Shell Solar Gmbh | Device and method for tempering at least one process good |
| US6787485B1 (en) | 1999-10-20 | 2004-09-07 | Shell Solar Gmbh | Appliance and method for tempering a plurality of process items by absorption of electromagnetic radiation generated by plural sources of the radiation |
| JP2007519232A (ja) * | 2003-12-19 | 2007-07-12 | マトソン テクノロジー カナダ インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
| JP2013030772A (ja) * | 2003-12-19 | 2013-02-07 | Mattson Technology Canada Inc | 工作物の熱誘起運動を抑制する機器及び装置 |
| EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
| EP3918643A4 (en) * | 2019-01-31 | 2022-05-25 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Arrangement, device, and method for heat treating a multilayer body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0234164B2 (enrdf_load_stackoverflow) | 1990-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4493977A (en) | Method for heating semiconductor wafers by a light-radiant heating furnace | |
| JP3218164B2 (ja) | 被処理体の支持ボート、熱処理装置及び熱処理方法 | |
| US4550245A (en) | Light-radiant furnace for heating semiconductor wafers | |
| US9330949B2 (en) | Heat treatment apparatus for heating substrate by irradiating substrate with flash of light | |
| US3627590A (en) | Method for heat treatment of workpieces | |
| JP3241401B2 (ja) | 急速熱処理装置 | |
| JP4788610B2 (ja) | 加熱装置、塗布、現像装置、加熱方法及び記憶媒体 | |
| JP2000323487A (ja) | 枚葉式熱処理装置 | |
| US9351341B2 (en) | Heat treatment apparatus for heating substrate by irradiating substrate with flash of light | |
| KR102711233B1 (ko) | 램프헤드에서의 다중구역 램프 제어 및 개별 램프 제어 | |
| JP3493880B2 (ja) | 輻射加熱装置および加熱方法 | |
| TW201903903A (zh) | 熱處理方法 | |
| KR20120011878A (ko) | 가스 공급부를 갖는 석영 윈도우 및 이를 통합하는 프로세싱 장비 | |
| JPS61129834A (ja) | 光照射型熱処理装置 | |
| JPH09237789A (ja) | 遮蔽体および熱処理装置および熱処理方法 | |
| JP2002075901A5 (enrdf_load_stackoverflow) | ||
| JP2008053401A (ja) | ランプ加熱装置 | |
| JPH1097999A (ja) | 加熱装置、処理装置、加熱方法及び処理方法 | |
| JP6183692B2 (ja) | 熱処理装置 | |
| JP2004055880A (ja) | 基板処理装置 | |
| JP2003100651A (ja) | 基板熱処理装置 | |
| JPH0848595A (ja) | 枚葉式気相成長装置 | |
| JPH0729844A (ja) | 半導体基板の赤外線加熱方法及び赤外線加熱装置 | |
| JP3510329B2 (ja) | 熱処理装置 | |
| JPH06318553A (ja) | 熱処理装置 |