JPH0231488A - 半導体レーザ装置及びその製造方法 - Google Patents

半導体レーザ装置及びその製造方法

Info

Publication number
JPH0231488A
JPH0231488A JP63182393A JP18239388A JPH0231488A JP H0231488 A JPH0231488 A JP H0231488A JP 63182393 A JP63182393 A JP 63182393A JP 18239388 A JP18239388 A JP 18239388A JP H0231488 A JPH0231488 A JP H0231488A
Authority
JP
Japan
Prior art keywords
groove
layer
semiconductor laser
laser device
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63182393A
Other languages
English (en)
Japanese (ja)
Inventor
Hitoshi Mizuochi
水落　均
Hideyo Higuchi
樋口　英世
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63182393A priority Critical patent/JPH0231488A/ja
Priority to US07/378,692 priority patent/US4966863A/en
Priority to DE3923755A priority patent/DE3923755A1/de
Priority to GB8916358A priority patent/GB2221093B/en
Publication of JPH0231488A publication Critical patent/JPH0231488A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/066—Gp III-V liquid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP63182393A 1988-07-20 1988-07-20 半導体レーザ装置及びその製造方法 Pending JPH0231488A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63182393A JPH0231488A (ja) 1988-07-20 1988-07-20 半導体レーザ装置及びその製造方法
US07/378,692 US4966863A (en) 1988-07-20 1989-07-11 Method for producing a semiconductor laser device
DE3923755A DE3923755A1 (de) 1988-07-20 1989-07-18 Halbleiterlaser und verfahren zu seiner herstellung
GB8916358A GB2221093B (en) 1988-07-20 1989-07-18 A semiconductor laser device and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63182393A JPH0231488A (ja) 1988-07-20 1988-07-20 半導体レーザ装置及びその製造方法

Publications (1)

Publication Number Publication Date
JPH0231488A true JPH0231488A (ja) 1990-02-01

Family

ID=16117536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63182393A Pending JPH0231488A (ja) 1988-07-20 1988-07-20 半導体レーザ装置及びその製造方法

Country Status (4)

Country Link
US (1) US4966863A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0231488A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3923755A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2221093B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
JPH0716081B2 (ja) * 1987-08-05 1995-02-22 三菱電機株式会社 半導体発光装置
US5160492A (en) * 1989-04-24 1992-11-03 Hewlett-Packard Company Buried isolation using ion implantation and subsequent epitaxial growth
DE4014032A1 (de) * 1990-05-02 1991-11-07 Standard Elektrik Lorenz Ag Halbleiter-laser
JP3510305B2 (ja) * 1994-02-22 2004-03-29 三菱電機株式会社 半導体レーザの製造方法，及び半導体レーザ
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
CN113113519B (zh) * 2021-03-26 2022-07-15 武汉光迅科技股份有限公司 半导体发光器件及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63250886A (ja) * 1987-04-08 1988-10-18 Oki Electric Ind Co Ltd 半導体レ−ザ素子の製造方法
JPS63281489A (ja) * 1987-05-14 1988-11-17 Oki Electric Ind Co Ltd 半導体レ−ザ素子の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
US4504952A (en) * 1982-06-01 1985-03-12 At&T Bell Laboratories Stripe-guide TJS laser
JPS58220486A (ja) * 1982-06-17 1983-12-22 Fujitsu Ltd 半導体発光素子の製造方法
US4509996A (en) * 1982-11-05 1985-04-09 International Standard Electric Corporation Injection laser manufacture
JPS59112673A (ja) * 1982-12-20 1984-06-29 Fujitsu Ltd 半導体発光装置
JPS59112674A (ja) * 1982-12-20 1984-06-29 Fujitsu Ltd 半導体発光装置
JPS59124183A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 発光半導体装置
JPS59175783A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体発光装置
GB2138999B (en) * 1983-04-26 1986-11-05 British Telecomm Semiconductor lasers
JPS59215785A (ja) * 1983-05-24 1984-12-05 Matsushita Electric Ind Co Ltd 半導体レ−ザ
US4573255A (en) * 1984-03-22 1986-03-04 At&T Bell Laboratories Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
JPS6174388A (ja) * 1984-09-19 1986-04-16 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
US4837775A (en) * 1985-10-21 1989-06-06 General Electric Company Electro-optic device having a laterally varying region
US4701995A (en) * 1986-10-29 1987-10-27 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making a nonplanar buried-heterostructure distributed-feedback laser
JPH0797689B2 (ja) * 1987-05-18 1995-10-18 株式会社東芝 半導体レ−ザ素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63250886A (ja) * 1987-04-08 1988-10-18 Oki Electric Ind Co Ltd 半導体レ−ザ素子の製造方法
JPS63281489A (ja) * 1987-05-14 1988-11-17 Oki Electric Ind Co Ltd 半導体レ−ザ素子の製造方法

Also Published As

Publication number Publication date
US4966863A (en) 1990-10-30
GB2221093A (en) 1990-01-24
GB8916358D0 (en) 1989-09-06
DE3923755C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-11-05
GB2221093B (en) 1992-02-05
DE3923755A1 (de) 1990-02-01

Similar Documents

Publication Publication Date Title
US6291256B1 (en) Method of manufacturing non-regrowth distributed feedback ridge semiconductor
US6573116B2 (en) Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same
US5020072A (en) Semiconductor laser device
JPH0231488A (ja) 半導体レーザ装置及びその製造方法
JP2553217B2 (ja) レーザ素子及びその製造方法
US4791647A (en) Semiconductor laser
JPS63213383A (ja) 半導体レ−ザ
US5360763A (en) Method for fabricating an optical semiconductor device
JP3251191B2 (ja) 光通信に用いる半導体光素子
JPH01106489A (ja) 半導体装置及びその製造方法
JPH0437598B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2810518B2 (ja) 半導体レーザ装置およびその製造方法
JPS6351558B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0642583B2 (ja) 半導体レーザ装置
JPH11163457A (ja) 半導体レーザの回折格子形成方法
JPH01215087A (ja) 半導体発光素子
JPS63305582A (ja) 半導体レ−ザ
JPH0362582A (ja) 半導体装置の製造方法
JPS60165782A (ja) 半導体レ−ザ
JP2686133B2 (ja) 半導体レーザの製造方法
JPH02281681A (ja) 半導体レーザ
JPH10186121A (ja) 吸収型回折格子の形成方法、およびその回折格子を利用した利得結合型ｄｆｂレーザの作製法
JPH01248586A (ja) 光半導体装置の製造方法
JPS6188584A (ja) 位相シフト構造付分布帰還形半導体レ−ザ
JPH09312444A (ja) 半導体レーザおよびその製造方法