JPS6351558B2 - - Google Patents

Info

Publication number
JPS6351558B2
JPS6351558B2 JP58104261A JP10426183A JPS6351558B2 JP S6351558 B2 JPS6351558 B2 JP S6351558B2 JP 58104261 A JP58104261 A JP 58104261A JP 10426183 A JP10426183 A JP 10426183A JP S6351558 B2 JPS6351558 B2 JP S6351558B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
optical waveguide
current blocking
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58104261A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59229889A (ja
Inventor
Hajime Okuda
Junichi Kinoshita
Juzo Hirayama
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58104261A priority Critical patent/JPS59229889A/ja
Publication of JPS59229889A publication Critical patent/JPS59229889A/ja
Publication of JPS6351558B2 publication Critical patent/JPS6351558B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP58104261A 1983-06-13 1983-06-13 半導体レ−ザ製造方法 Granted JPS59229889A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58104261A JPS59229889A (ja) 1983-06-13 1983-06-13 半導体レ−ザ製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58104261A JPS59229889A (ja) 1983-06-13 1983-06-13 半導体レ−ザ製造方法

Publications (2)

Publication Number Publication Date
JPS59229889A JPS59229889A (ja) 1984-12-24
JPS6351558B2 true JPS6351558B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-10-14

Family

ID=14375983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58104261A Granted JPS59229889A (ja) 1983-06-13 1983-06-13 半導体レ−ザ製造方法

Country Status (1)

Country Link
JP (1) JPS59229889A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902644A (en) * 1986-03-28 1990-02-20 American Telephone And Telegraph Company At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
US5147825A (en) * 1988-08-26 1992-09-15 Bell Telephone Laboratories, Inc. Photonic-integrated-circuit fabrication process
JPH0719931B2 (ja) * 1989-04-06 1995-03-06 三菱電機株式会社 半導体レーザ装置およびその製造方法

Also Published As

Publication number Publication date
JPS59229889A (ja) 1984-12-24

Similar Documents

Publication Publication Date Title
US4883771A (en) Method of making and separating semiconductor lasers
US4994143A (en) Method for manufacturing a buried heterostructure laser diode
US4966863A (en) Method for producing a semiconductor laser device
JPS6351558B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6237911B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3047049B2 (ja) 埋込み構造半導体レーザの製造方法
JP2555197B2 (ja) 半導体レーザ装置
KR100377184B1 (ko) 이득 결합형 단일모드 반도체 레이저 및 그 제조방법
JPH01186688A (ja) 半導体レーザ装置
JPS6184888A (ja) 埋込みヘテロ型半導体レ−ザ
JPH01215087A (ja) 半導体発光素子
JPH037153B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2525776B2 (ja) 半導体装置の製造方法
KR920000358B1 (ko) 고신뢰도 매립형 레이저 다이오드 제조방법
JPS5834988A (ja) 半導体レ−ザの製造方法
JP3522151B2 (ja) 化合物半導体レーザの製造方法
JP2563397B2 (ja) 半導体レーザ装置の製造方法
JPH01293686A (ja) 半導体レーザ素子の製造方法
JPS61220389A (ja) 集積型半導体レ−ザ
JPH0567849A (ja) 半導体発光素子
KR100319759B1 (ko) 선택적 결정 성장법을 이용한 굴절률보상형 분산궤환형레이저다이오드의 제조 방법
JPH0710019B2 (ja) 埋込み構造半導体レ−ザの製造方法
JPH0579194B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR920008891B1 (ko) 매립형 이종구조(buried heterostructure)레이저 다이오드 제조방법
JPH0377675B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)