JPH02311393A - シード結晶上へのエピタキシャル層の結晶成長方法 - Google Patents

シード結晶上へのエピタキシャル層の結晶成長方法

Info

Publication number
JPH02311393A
JPH02311393A JP13325589A JP13325589A JPH02311393A JP H02311393 A JPH02311393 A JP H02311393A JP 13325589 A JP13325589 A JP 13325589A JP 13325589 A JP13325589 A JP 13325589A JP H02311393 A JPH02311393 A JP H02311393A
Authority
JP
Japan
Prior art keywords
crystal
seed crystal
vapor pressure
chamber
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13325589A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0585517B2 (enrdf_load_stackoverflow
Inventor
Michihiro Sano
道宏 佐野
Hiroyuki Kato
裕幸 加藤
Yasuo Okuno
奥野　保男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP13325589A priority Critical patent/JPH02311393A/ja
Publication of JPH02311393A publication Critical patent/JPH02311393A/ja
Publication of JPH0585517B2 publication Critical patent/JPH0585517B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13325589A 1989-05-26 1989-05-26 シード結晶上へのエピタキシャル層の結晶成長方法 Granted JPH02311393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13325589A JPH02311393A (ja) 1989-05-26 1989-05-26 シード結晶上へのエピタキシャル層の結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13325589A JPH02311393A (ja) 1989-05-26 1989-05-26 シード結晶上へのエピタキシャル層の結晶成長方法

Publications (2)

Publication Number Publication Date
JPH02311393A true JPH02311393A (ja) 1990-12-26
JPH0585517B2 JPH0585517B2 (enrdf_load_stackoverflow) 1993-12-07

Family

ID=15100341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13325589A Granted JPH02311393A (ja) 1989-05-26 1989-05-26 シード結晶上へのエピタキシャル層の結晶成長方法

Country Status (1)

Country Link
JP (1) JPH02311393A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5499600A (en) * 1993-12-24 1996-03-19 Stanley Electric Co., Ltd. Methods for compound semiconductor crystal growth from solution

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5499600A (en) * 1993-12-24 1996-03-19 Stanley Electric Co., Ltd. Methods for compound semiconductor crystal growth from solution

Also Published As

Publication number Publication date
JPH0585517B2 (enrdf_load_stackoverflow) 1993-12-07

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