JPH0230206B2 - - Google Patents

Info

Publication number
JPH0230206B2
JPH0230206B2 JP54044015A JP4401579A JPH0230206B2 JP H0230206 B2 JPH0230206 B2 JP H0230206B2 JP 54044015 A JP54044015 A JP 54044015A JP 4401579 A JP4401579 A JP 4401579A JP H0230206 B2 JPH0230206 B2 JP H0230206B2
Authority
JP
Japan
Prior art keywords
field effect
switch
effect transistor
electrode side
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54044015A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55136720A (en
Inventor
Hiroshi Sakuma
Toshuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4401579A priority Critical patent/JPS55136720A/ja
Publication of JPS55136720A publication Critical patent/JPS55136720A/ja
Publication of JPH0230206B2 publication Critical patent/JPH0230206B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Electronic Switches (AREA)
JP4401579A 1979-04-11 1979-04-11 Solidstate alternating current switch Granted JPS55136720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4401579A JPS55136720A (en) 1979-04-11 1979-04-11 Solidstate alternating current switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4401579A JPS55136720A (en) 1979-04-11 1979-04-11 Solidstate alternating current switch

Publications (2)

Publication Number Publication Date
JPS55136720A JPS55136720A (en) 1980-10-24
JPH0230206B2 true JPH0230206B2 (en:Method) 1990-07-05

Family

ID=12679851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4401579A Granted JPS55136720A (en) 1979-04-11 1979-04-11 Solidstate alternating current switch

Country Status (1)

Country Link
JP (1) JPS55136720A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9537481B2 (en) 2011-06-06 2017-01-03 Optex Co., Ltd. DC insulation semiconductor relay device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58107629U (ja) * 1982-01-18 1983-07-22 株式会社チノ− スイツチ駆動回路
JPS58107634U (ja) * 1982-01-19 1983-07-22 株式会社チノ− スイツチ駆動回路
JPS58139742U (ja) * 1982-03-16 1983-09-20 ファナック株式会社 無極性無接点リレ−
JPS58139741U (ja) * 1982-03-16 1983-09-20 ファナック株式会社 無接点リレ−
US4485342A (en) * 1982-07-27 1984-11-27 General Electric Company Load driving circuitry with load current sensing
US4581540A (en) * 1984-03-16 1986-04-08 Teledyne Industries, Inc. Current overload protected solid state relay
GB8423574D0 (en) * 1984-09-18 1984-10-24 Smiths Ind Plc Ac Switch
JPH07107974B2 (ja) * 1985-06-03 1995-11-15 株式会社日立製作所 スイツチング半導体素子の駆動回路
JPS63151112A (ja) * 1986-12-15 1988-06-23 Fujisoku:Kk 半導体リレ−
JP4618164B2 (ja) * 2005-09-20 2011-01-26 株式会社デンソー スイッチ回路
JP5776011B2 (ja) * 2010-12-10 2015-09-09 パナソニックＩｐマネジメント株式会社 絶縁キャパシタを用いた容量絶縁方式の半導体リレー
JP5660492B2 (ja) * 2010-12-10 2015-01-28 パナソニックＩｐマネジメント株式会社 絶縁キャパシタを用いた容量絶縁方式の半導体リレー

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227823B2 (en:Method) * 1971-10-14 1977-07-22
JPS5016981Y2 (en:Method) * 1971-12-08 1975-05-26
JPS52101351U (en:Method) * 1976-01-28 1977-08-01
US4052623A (en) * 1976-08-10 1977-10-04 General Electric Company Isolated semiconductor gate control circuit
JPS53140962A (en) * 1977-05-16 1978-12-08 Hitachi Denshi Ltd Electronic switch circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9537481B2 (en) 2011-06-06 2017-01-03 Optex Co., Ltd. DC insulation semiconductor relay device

Also Published As

Publication number Publication date
JPS55136720A (en) 1980-10-24

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