JPH0230189B2 - - Google Patents

Info

Publication number
JPH0230189B2
JPH0230189B2 JP55138026A JP13802680A JPH0230189B2 JP H0230189 B2 JPH0230189 B2 JP H0230189B2 JP 55138026 A JP55138026 A JP 55138026A JP 13802680 A JP13802680 A JP 13802680A JP H0230189 B2 JPH0230189 B2 JP H0230189B2
Authority
JP
Japan
Prior art keywords
signal charge
storage region
transfer means
charge transfer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55138026A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5762557A (en
Inventor
Shinichi Teranishi
Yasuo Ishihara
Hiromitsu Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55138026A priority Critical patent/JPS5762557A/ja
Priority to US06/297,759 priority patent/US4484210A/en
Publication of JPS5762557A publication Critical patent/JPS5762557A/ja
Publication of JPH0230189B2 publication Critical patent/JPH0230189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP55138026A 1980-09-05 1980-10-02 Solid state image pickup device and driving method therefor Granted JPS5762557A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55138026A JPS5762557A (en) 1980-10-02 1980-10-02 Solid state image pickup device and driving method therefor
US06/297,759 US4484210A (en) 1980-09-05 1981-08-31 Solid-state imaging device having a reduced image lag

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55138026A JPS5762557A (en) 1980-10-02 1980-10-02 Solid state image pickup device and driving method therefor

Publications (2)

Publication Number Publication Date
JPS5762557A JPS5762557A (en) 1982-04-15
JPH0230189B2 true JPH0230189B2 (enrdf_load_stackoverflow) 1990-07-04

Family

ID=15212308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55138026A Granted JPS5762557A (en) 1980-09-05 1980-10-02 Solid state image pickup device and driving method therefor

Country Status (1)

Country Link
JP (1) JPS5762557A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58187082A (ja) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd 固体撮像装置の駆動方法
JPS6273662A (ja) * 1985-09-26 1987-04-04 Toshiba Corp 固体撮像装置の製造方法
JPS62124771A (ja) * 1985-11-25 1987-06-06 Sharp Corp 固体撮像装置
JPH06105782B2 (ja) * 1985-12-20 1994-12-21 株式会社東芝 固体撮像装置
JP2517882B2 (ja) * 1986-12-23 1996-07-24 ソニー株式会社 固体撮像装置
JPH02280377A (ja) * 1989-04-20 1990-11-16 Matsushita Electron Corp 固体撮像装置およびその駆動方法
JP2595138B2 (ja) * 1990-06-14 1997-03-26 三菱電機株式会社 固体撮像素子及びその製造方法
JP3284986B2 (ja) 1998-12-04 2002-05-27 日本電気株式会社 光電変換素子およびそれを用いた固体撮像装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386516A (en) * 1977-01-10 1978-07-31 Hitachi Ltd Solid state pickup device
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device

Also Published As

Publication number Publication date
JPS5762557A (en) 1982-04-15

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