JPH0229729Y2 - - Google Patents
Info
- Publication number
- JPH0229729Y2 JPH0229729Y2 JP1982113716U JP11371682U JPH0229729Y2 JP H0229729 Y2 JPH0229729 Y2 JP H0229729Y2 JP 1982113716 U JP1982113716 U JP 1982113716U JP 11371682 U JP11371682 U JP 11371682U JP H0229729 Y2 JPH0229729 Y2 JP H0229729Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- layer
- type
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982113716U JPS5936264U (ja) | 1982-07-27 | 1982-07-27 | シヨツトキバリア半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982113716U JPS5936264U (ja) | 1982-07-27 | 1982-07-27 | シヨツトキバリア半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5936264U JPS5936264U (ja) | 1984-03-07 |
| JPH0229729Y2 true JPH0229729Y2 (enrdf_load_stackoverflow) | 1990-08-09 |
Family
ID=30263134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982113716U Granted JPS5936264U (ja) | 1982-07-27 | 1982-07-27 | シヨツトキバリア半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936264U (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750791B2 (ja) * | 1989-09-20 | 1995-05-31 | 株式会社日立製作所 | 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機 |
| US7355260B2 (en) * | 2004-06-30 | 2008-04-08 | Freescale Semiconductor, Inc. | Schottky device and method of forming |
| US7436022B2 (en) * | 2005-02-11 | 2008-10-14 | Alpha & Omega Semiconductors, Ltd. | Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout |
| CN103534810B (zh) * | 2011-05-18 | 2017-05-17 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS522446A (en) * | 1975-06-24 | 1977-01-10 | Ushio Inc | Information reading apparatus |
| JPS528781A (en) * | 1975-07-10 | 1977-01-22 | Mitsubishi Electric Corp | Schottky barrier diode |
| JPS5935183B2 (ja) * | 1975-08-20 | 1984-08-27 | サンケイ電気 （株） | シヨツトキバリア半導体装置 |
| JPS5737886A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Semiconductor device |
-
1982
- 1982-07-27 JP JP1982113716U patent/JPS5936264U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5936264U (ja) | 1984-03-07 |
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