JPH02275622A - Annealing method - Google Patents
Annealing methodInfo
- Publication number
- JPH02275622A JPH02275622A JP9705789A JP9705789A JPH02275622A JP H02275622 A JPH02275622 A JP H02275622A JP 9705789 A JP9705789 A JP 9705789A JP 9705789 A JP9705789 A JP 9705789A JP H02275622 A JPH02275622 A JP H02275622A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- thin film
- silicon thin
- light
- absorbed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000137 annealing Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 9
- 239000011521 glass Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000002844 melting Methods 0.000 abstract description 9
- 230000008018 melting Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000003513 alkali Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 4
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ガラス基体上に形成されたシリコン薄膜へ短
波長アークランプの光を照射するアニール方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an annealing method in which a silicon thin film formed on a glass substrate is irradiated with light from a short wavelength arc lamp.
〔発明の１既要〕
本発明は、上記の様なアニール方法において、短波長ア
ークランプの光のうちでガラス基体に吸収される波長成
分を除去して照射を行うことによって、高性能の半導体
装置を低コストで製造することができる様にしたもので
ある。[1 Summary of the Invention] The present invention provides a method for producing high-performance semiconductors by removing wavelength components of light from a short-wavelength arc lamp that are absorbed by the glass substrate in the annealing method as described above. This allows the device to be manufactured at low cost.
〔従来の技４＄ｊ ）
近年、大面積のガラス基体上にシリコン薄膜を形成し、
このシリコン薄膜に薄膜トランジスタ等の半導体装置を
製造して、液晶デイスプレィやコンタクトラインセンサ
等を製作することが行われている。[Conventional technique 4 $j] In recent years, silicon thin films have been formed on large-area glass substrates,
Semiconductor devices such as thin film transistors are manufactured on this silicon thin film to manufacture liquid crystal displays, contact line sensors, and the like.
ところで、薄膜トランジスタ等のキャリア移動度を高く
するためには、シリコン薄膜への不純物注入後等に十分
なアニールを行ってシリコン薄膜の結晶性を向上させる
必要がある。By the way, in order to increase the carrier mobility of thin film transistors and the like, it is necessary to improve the crystallinity of the silicon thin film by performing sufficient annealing after implanting impurities into the silicon thin film.
しかし、電気炉等によってアニールを長時間に亘って行
うのは、不純物の再拡散等が生じるので好ましくない。However, it is not preferable to perform annealing for a long time using an electric furnace or the like because impurity re-diffusion may occur.
そこで、短時間の加熱が可能なハロゲンランプによるア
ニールが提案されている（例えば特公昭６３−４２４０
６号公報）。Therefore, annealing using a halogen lamp that can heat for a short time has been proposed (for example, Japanese Patent Publication No. 63-4240
Publication No. 6).
ところが、第４図に示す様に、ハロゲンランプの光には
シリコンに吸収される波長成分が多くは含まれていない
ので、シリコン薄膜を効果的にはアニールすることがで
きない。このため、キャリア移動度が高くて高性能の薄
膜トランジスタ等は製造することができない。However, as shown in FIG. 4, the light from the halogen lamp does not contain many wavelength components that are absorbed by silicon, so it is not possible to effectively anneal the silicon thin film. Therefore, high performance thin film transistors with high carrier mobility cannot be manufactured.
本発明によるアニール方法は、短波長アークランプ１１
の光１２のうちでガラス基体１３に吸収される波長成分
を除去して照射を行う様にしている。The annealing method according to the present invention includes a short wavelength arc lamp 11
Irradiation is performed by removing wavelength components of the light 12 that are absorbed by the glass substrate 13.
本発明によるアニール方法では、シリコン薄膜１４に吸
収される波長成分を短波長アークランプ１１の光１２が
多く含んでいるので、シリコン薄膜１４を短時間で効果
的にアニールすることができる。In the annealing method according to the present invention, since the light 12 from the short wavelength arc lamp 11 contains many wavelength components that are absorbed by the silicon thin film 14, the silicon thin film 14 can be effectively annealed in a short time.
また、短波長アークランプ１１の光１２はシリコン薄膜
１４のみならずガラス基体１３にも吸収される波長成分
を含んでいるが、この波長成分は除去して照射を行って
いるので、ガラス基体１３が光１２を吸収して加熱され
ることはない。従って、低融点のガラス基体１３を使用
してもこのガラス基体１３は変形したり融解したすせず
、シリコン薄膜１４を十分にアニールすることができる
。Furthermore, the light 12 from the short wavelength arc lamp 11 includes a wavelength component that is absorbed not only by the silicon thin film 14 but also by the glass substrate 13, but since the irradiation is performed with this wavelength component removed, the glass substrate 13 absorbs light 12 and is not heated. Therefore, even if a glass substrate 13 having a low melting point is used, the glass substrate 13 will not be deformed or melted, and the silicon thin film 14 can be sufficiently annealed.
以下、本発明の一実施例を第１図〜第３図を参照しなが
ら説明する。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1 to 3.
第１図が、本実施例を示している。本実施例でも上述の
一従来例と同様に短時間の加熱が可能なランプアニール
を行うが、その光源は短波長アークランプ１１である。FIG. 1 shows this embodiment. In this embodiment as well, lamp annealing capable of short-time heating is performed as in the above-mentioned conventional example, but the light source is a short wavelength arc lamp 11.
第３図は、短波長アークランプ１１からの光１２の波長
分布を示している。この第３図と既述の第４図との比較
からも明らかな様に、短波長アークランプ１１の光１２
には、シリコンに吸収される波長成分が多く含まれてい
る。FIG. 3 shows the wavelength distribution of the light 12 from the short wavelength arc lamp 11. As is clear from the comparison between this FIG. 3 and the previously described FIG. 4, the light 12 of the short wavelength arc lamp 11
contains many wavelength components that are absorbed by silicon.
従って本実施例では、上述の一従来例に比べて、ガラス
基体１３上に形成されたシリコン薄膜１４を短時間で効
果的にアニールすることができる。Therefore, in this embodiment, the silicon thin film 14 formed on the glass substrate 13 can be effectively annealed in a shorter time than in the above-mentioned conventional example.
ところで、ガラス基体１３の材料としては、ＡＮガラス
（商品名、旭硝子側製）やＮＡ−１０（商品名、ＨＯＹ
Ａ Ｑｌ製）等の低融点無アルカリガラス（融点は６
５０℃程度）が多用されている。By the way, the material of the glass substrate 13 is AN glass (product name, manufactured by Asahi Glass) and NA-10 (product name, HOY glass).
Low melting point non-alkali glass (melting point is 6
(approximately 50°C) is often used.
第２図は、これらのガラスの光透過特性を示している。Figure 2 shows the light transmission properties of these glasses.
この第２図から明らかな様に、波長が０．３７１ ｍ程
度以下の光は上記のガラスに吸収される。As is clear from FIG. 2, light with a wavelength of about 0.371 m or less is absorbed by the glass.
そして、第３図から明らかな様に、短波長アークランプ
１１の光１２はこの波長成分を含んでいる。As is clear from FIG. 3, the light 12 from the short wavelength arc lamp 11 contains this wavelength component.
従って、第１図に示す様にシリコン薄膜１４へ光１２を
直接に照射する場合でもガラス基体１３の周辺部等でシ
リコン薄膜１４が形成されていないためにガラス基体１
３が露出していたり、またはガラス基体１３側からこの
ガラス基体１３を通してシリコン薄膜１４へ光１２を照
射する場合は、ガラス基体１３が光１２を吸収して加熱
される。Therefore, even when the silicon thin film 14 is directly irradiated with the light 12 as shown in FIG.
3 is exposed, or when the light 12 is irradiated from the glass substrate 13 side to the silicon thin film 14 through the glass substrate 13, the glass substrate 13 absorbs the light 12 and is heated.
そして、ガラス基体１３の材料が上述の様に低融点ガラ
スであるので、ガラス基体１３が変形したり融解したり
して、半導体装置を製造することができない。これに対
しては、石英ガラス等の高融点ガラス（融点は１０００
°Ｃ程度）を用いることもできるが、高融点ガラスはコ
ストが高い。Since the material of the glass substrate 13 is low-melting glass as described above, the glass substrate 13 deforms or melts, making it impossible to manufacture a semiconductor device. In contrast, high melting point glasses such as quartz glass (melting point is 1000
℃) can also be used, but high melting point glass is expensive.
そこで本実施例では、短波長アークランプ１１とシリコ
ン薄膜１４及びガラス基体１３との間に、フィルタ１５
を配している。このフィルタ１５は、ガラス基体１３の
材料に応して、第２図に示した各種材料の光透過特性に
略等しい特性を有している。Therefore, in this embodiment, a filter 15 is provided between the short wavelength arc lamp 11, the silicon thin film 14, and the glass substrate 13.
are arranged. Depending on the material of the glass substrate 13, this filter 15 has characteristics approximately equal to the light transmission characteristics of the various materials shown in FIG.
このため、フィルタ１５を透過した光１２は、シリコン
薄膜１４に吸収される波長成分のみを含んでおり、ガラ
ス基体１３に吸収される波長成分は含んでいない。Therefore, the light 12 that has passed through the filter 15 includes only wavelength components that are absorbed by the silicon thin film 14 and does not include wavelength components that are absorbed by the glass substrate 13.
この結果、第１図に示す様にシリコン薄膜１４へ光１２
を直接に照射する場合は勿論、ガラス基体１３側からこ
のガラス基体１３を通してシリコン薄膜１４へ光１２を
Ｉｔｓ躬する場合でもガラス基体１３側にフィルタ１５
を配すれば、ガラス基体１３が光１２を吸収して加熱さ
れることはない。As a result, as shown in FIG.
Not only when the light 12 is directly irradiated, but also when the light 12 is transmitted from the glass substrate 13 side to the silicon thin film 14 through the glass substrate 13, there is a filter 15 on the glass substrate 13 side.
, the glass substrate 13 will not absorb the light 12 and be heated.
従って、ガラス基体１３の材料として上述の様な低コス
トの低融点無アルカリガラスを使用していてもこのガラ
ス基体１３は変形したり融解したすせず、シリコン薄膜
１４を十分にアニールすることができる。Therefore, even if the above-mentioned low-cost, low-melting-point non-alkali glass is used as the material for the glass substrate 13, the glass substrate 13 will not deform or melt, and the silicon thin film 14 will not be sufficiently annealed. can.
本発明によるアニール方法では、シリコン薄膜を短時間
で効果的にアニールすることができ、しかも低融点のガ
ラス基体を使用してもこのガラス基体は変形したり融解
したすせずシリコン薄膜を１分にアニールすることがで
きるので、高性能の半導体装置を低コストで製造するこ
とができる。With the annealing method according to the present invention, it is possible to effectively anneal a silicon thin film in a short period of time, and even if a glass substrate with a low melting point is used, the glass substrate does not deform or melt. Since the annealing process can be performed in a similar manner, high-performance semiconductor devices can be manufactured at low cost.
図はガラスの光透過特性を示すグラフ、第３図及び第４
図は夫々短波長アークランプ及びハロゲンランプの波長
分布を示すグラフである。The figures are graphs showing the light transmission characteristics of glass, Figures 3 and 4.
The figure is a graph showing the wavelength distribution of a short wavelength arc lamp and a halogen lamp, respectively.
なお図面に用いた符号において、
１１−・−・・・−−−ｍ−・−・−短波長アークラン
プ１２・・・−−ｍ−−−・−−−−−−−・・光１３
−−−−−−−・−一−−−−・−・ガラス基体１４・
−−−−−−・−−一−−−・−・−シリコン薄膜１５
−・・・−一−−−・−・−・−フィルタである。In addition, in the symbols used in the drawings, 11-------------Short wavelength arc lamp 12----------------------- Light 13
−−−−−−・−1−−−−・−・Glass base 14・
−−−−−−・−−1−−−・−・−Silicon thin film 15
−...−1−−−・−・−・−filter.
Claims (1)
ランプの光を照射するアニール方法において、 前記光のうちで前記ガラス基体に吸収される波長成分を
除去して前記照射を行うことを特徴とするアニール方法
。[Claims] In an annealing method in which a silicon thin film formed on a glass substrate is irradiated with light from a short wavelength arc lamp, the irradiation is performed by removing a wavelength component of the light that is absorbed by the glass substrate. An annealing method characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9705789A JPH02275622A (en) | 1989-04-17 | 1989-04-17 | Annealing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9705789A JPH02275622A (en) | 1989-04-17 | 1989-04-17 | Annealing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02275622A true JPH02275622A (en) | 1990-11-09 |
Family
ID=14182025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9705789A Pending JPH02275622A (en) | 1989-04-17 | 1989-04-17 | Annealing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02275622A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614133A (en) * | 1994-05-27 | 1997-03-25 | Sharp Kabushiki Kaisha | Method for producing thin-film electro luminescent device |
| US6239413B1 (en) | 1998-11-13 | 2001-05-29 | Nec Corporation | Light irradiation annealing apparatus having infrared radiation cut filter |
| WO2001059823A1 (en) * | 2000-02-08 | 2001-08-16 | Matsushita Electric Industrial Co., Ltd. | Lamp anneal device and substrate of display device |
| WO2002047137A1 (en) * | 2000-12-08 | 2002-06-13 | Sony Corporation | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135630A (en) * | 1982-02-08 | 1983-08-12 | Fujitsu Ltd | Annealing of semiconductor layer |
| JPS59121876A (en) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | Glass substrate for thin film device |
-
1989
- 1989-04-17 JP JP9705789A patent/JPH02275622A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135630A (en) * | 1982-02-08 | 1983-08-12 | Fujitsu Ltd | Annealing of semiconductor layer |
| JPS59121876A (en) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | Glass substrate for thin film device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614133A (en) * | 1994-05-27 | 1997-03-25 | Sharp Kabushiki Kaisha | Method for producing thin-film electro luminescent device |
| US6239413B1 (en) | 1998-11-13 | 2001-05-29 | Nec Corporation | Light irradiation annealing apparatus having infrared radiation cut filter |
| WO2001059823A1 (en) * | 2000-02-08 | 2001-08-16 | Matsushita Electric Industrial Co., Ltd. | Lamp anneal device and substrate of display device |
| WO2002047137A1 (en) * | 2000-12-08 | 2002-06-13 | Sony Corporation | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
| US7183229B2 (en) | 2000-12-08 | 2007-02-27 | Sony Corporation | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
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