JPS59121876A - Glass substrate for thin film device - Google Patents

Glass substrate for thin film device

Info

Publication number
JPS59121876A
JPS59121876A JP22740682A JP22740682A JPS59121876A JP S59121876 A JPS59121876 A JP S59121876A JP 22740682 A JP22740682 A JP 22740682A JP 22740682 A JP22740682 A JP 22740682A JP S59121876 A JPS59121876 A JP S59121876A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
glass
point
thin film
vicinity
covering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22740682A
Inventor
Toshio Aoki
Mitsushi Ikeda
Yasuhisa Oana
Koji Suzuki
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To prevent a thin film device from deforming at the time of forming the device by covering both side surfaces of a low melting point plate glass with insulators having ditortion point higher than those thereof. CONSTITUTION:Since mechanical stress abruptly decreases in the vicinity of the distortion point of glass 11, the glass is readily deformed by thermal stress or mechanical stress. At this time, both side surfaces are strengthened by covering the surfaces with an insulating substance 12 such as SiO2 having strong mechanical strength even in the distortion point of the glass 11 in a thickness of 0.5- 1.0mum. Thus, a thin semiconductor film, an insulating film, and annealing can be formed even at the temperature in the vicinity of the distortion point of the glass 11, and accurately masking can be performed.
JP22740682A 1982-12-28 1982-12-28 Glass substrate for thin film device Pending JPS59121876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22740682A JPS59121876A (en) 1982-12-28 1982-12-28 Glass substrate for thin film device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22740682A JPS59121876A (en) 1982-12-28 1982-12-28 Glass substrate for thin film device

Publications (1)

Publication Number Publication Date
JPS59121876A true true JPS59121876A (en) 1984-07-14

Family

ID=16860328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22740682A Pending JPS59121876A (en) 1982-12-28 1982-12-28 Glass substrate for thin film device

Country Status (1)

Country Link
JP (1) JPS59121876A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6270817A (en) * 1985-08-02 1987-04-01 Gen Electric Structure and method for manufacturing for thin film field effect transistor matrix address type liquid crystal displayunit
JPS6272167A (en) * 1985-08-02 1987-04-02 Gen Electric Depositing and curing method for gate electrode material forthin film field effect transistor
JPH02260570A (en) * 1988-12-24 1990-10-23 Samsung Electron Devices Co Ltd Polycrystalline silicon thin film transistor
JPH02275622A (en) * 1989-04-17 1990-11-09 Sony Corp Annealing method
JPH05251707A (en) * 1992-03-04 1993-09-28 Koudo Eizou Gijutsu Kenkyusho:Kk Thin-film transistor and its manufacture
JPH06296023A (en) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd Thin-film semiconductor device and manufacture thereof
US5929487A (en) * 1993-10-12 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6534832B2 (en) 1993-09-07 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6680488B2 (en) 2001-04-20 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7005671B2 (en) 2001-10-01 2006-02-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and organic polarizing film
US7098086B2 (en) 1999-08-31 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing thereof
US7163848B2 (en) 2000-06-28 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7218361B2 (en) 2000-03-27 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US7465957B2 (en) 2001-09-26 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7465482B2 (en) 2001-10-10 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Film, packaging material, container, lens, window, spectacles, recording medium, and deposition apparatus
US7541618B2 (en) 1999-09-27 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device having a thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159243A (en) * 1978-06-07 1979-12-15 Hitachi Ltd Liquid crystal dispaly device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159243A (en) * 1978-06-07 1979-12-15 Hitachi Ltd Liquid crystal dispaly device

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6272167A (en) * 1985-08-02 1987-04-02 Gen Electric Depositing and curing method for gate electrode material forthin film field effect transistor
JPS6270817A (en) * 1985-08-02 1987-04-01 Gen Electric Structure and method for manufacturing for thin film field effect transistor matrix address type liquid crystal displayunit
JPH02260570A (en) * 1988-12-24 1990-10-23 Samsung Electron Devices Co Ltd Polycrystalline silicon thin film transistor
JPH02275622A (en) * 1989-04-17 1990-11-09 Sony Corp Annealing method
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH05251707A (en) * 1992-03-04 1993-09-28 Koudo Eizou Gijutsu Kenkyusho:Kk Thin-film transistor and its manufacture
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH06296023A (en) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd Thin-film semiconductor device and manufacture thereof
US6534832B2 (en) 1993-09-07 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen
US5929487A (en) * 1993-10-12 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
US6268631B1 (en) 1993-10-12 2001-07-31 Semiconductor Energy Laboratoty Co., Ltd. Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
US6847097B2 (en) 1993-10-12 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
US7038302B2 (en) 1993-10-12 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
US7501685B2 (en) 1999-08-31 2009-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising pixel portion
US8933455B2 (en) 1999-08-31 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Display device comprising pixel
US7098086B2 (en) 1999-08-31 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing thereof
US9250490B2 (en) 1999-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device including light shielding film
US8552431B2 (en) 1999-08-31 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising pixel portion
US8253140B2 (en) 1999-08-31 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Display device having capacitor wiring
US7982267B2 (en) 1999-08-31 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Projector including display device
US9466622B2 (en) 1999-08-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Display device comprising a thin film transistor and a storage capacitor
US7541618B2 (en) 1999-09-27 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device having a thin film transistor
US7486344B2 (en) 2000-03-27 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US7218361B2 (en) 2000-03-27 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US7514302B2 (en) 2000-06-28 2009-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7163848B2 (en) 2000-06-28 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6680488B2 (en) 2001-04-20 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7939827B2 (en) 2001-09-26 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7465957B2 (en) 2001-09-26 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8502231B2 (en) 2001-09-26 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8183569B2 (en) 2001-09-26 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7800099B2 (en) 2001-10-01 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and organic polarizing film
US7005671B2 (en) 2001-10-01 2006-02-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and organic polarizing film
US7465482B2 (en) 2001-10-10 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Film, packaging material, container, lens, window, spectacles, recording medium, and deposition apparatus

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