JPH0226779B2 - - Google Patents

Info

Publication number
JPH0226779B2
JPH0226779B2 JP58026249A JP2624983A JPH0226779B2 JP H0226779 B2 JPH0226779 B2 JP H0226779B2 JP 58026249 A JP58026249 A JP 58026249A JP 2624983 A JP2624983 A JP 2624983A JP H0226779 B2 JPH0226779 B2 JP H0226779B2
Authority
JP
Japan
Prior art keywords
mos
semiconductor device
electrophoresis
less
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58026249A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59152634A (ja
Inventor
Keiji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58026249A priority Critical patent/JPS59152634A/ja
Publication of JPS59152634A publication Critical patent/JPS59152634A/ja
Publication of JPH0226779B2 publication Critical patent/JPH0226779B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP58026249A 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス Granted JPS59152634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58026249A JPS59152634A (ja) 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026249A JPS59152634A (ja) 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス

Publications (2)

Publication Number Publication Date
JPS59152634A JPS59152634A (ja) 1984-08-31
JPH0226779B2 true JPH0226779B2 (enExample) 1990-06-12

Family

ID=12188001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026249A Granted JPS59152634A (ja) 1983-02-21 1983-02-21 Ｍｏｓ半導体デバイス

Country Status (1)

Country Link
JP (1) JPS59152634A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS491611A (enExample) * 1972-04-19 1974-01-09
JPS5263070A (en) * 1975-11-19 1977-05-25 Hitachi Ltd Production of semiconductor element

Also Published As

Publication number Publication date
JPS59152634A (ja) 1984-08-31

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