JPH0225044A - ワイヤーボンダーの酸化防止システム - Google Patents

ワイヤーボンダーの酸化防止システム

Info

Publication number
JPH0225044A
JPH0225044A JP1127972A JP12797289A JPH0225044A JP H0225044 A JPH0225044 A JP H0225044A JP 1127972 A JP1127972 A JP 1127972A JP 12797289 A JP12797289 A JP 12797289A JP H0225044 A JPH0225044 A JP H0225044A
Authority
JP
Japan
Prior art keywords
wire
gas
capillary
oxidation
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1127972A
Other languages
English (en)
Other versions
JPH0618223B2 (ja
Inventor
Wan-Kyoon Choi
ワン―キョーン　チョイ
Jong-Whan Kim
ジョン―ハン　キム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019880006623A external-priority patent/KR920000628B1/ko
Priority claimed from KR1019880008038A external-priority patent/KR900001010A/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH0225044A publication Critical patent/JPH0225044A/ja
Publication of JPH0618223B2 publication Critical patent/JPH0618223B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明はワイヤーボンダーに関するもので、特に使用さ
れるワイヤーの機械的な強度を高め、接着力を向上させ
るために銅線を使用しようとする場合におけるワイヤー
の酸化を防止するためのものである。
〈従来の技術〉 従来半導体製造工程中のチップとリードフレームのパッ
ドとの配線作業時には、ワイヤーボンディングのワイヤ
ーの端にボールを形成して接着するボールボンディング
と、ワイヤーを直接付ける熱圧着の方法を使用している
。そして熱圧着方法よりはボールを形成してボンディン
グするボールボンディングの方が接着面積が広がるので
、安定性のあるボンディングができることは周知の事実
である。
このようなボンディング装置は第１図に図示されている
ように、カバー１によって外気から隔離された状態でス
プール２に巻かれて保持されているワイヤー２０が、真
ん中の導出管３を通じて導出され、多数のクランプ４に
よって支持案内されつつ前方のキャピラリ（ｃａｐｉｌ
ｌａｒｙ）　５を経て引き出されるように構成されてい
る。そして作業時には、キャピラリ５を移動させ、リー
ドフレームとチップのパッドとの間に配線を行なってい
た。
〈発明が解決しようとする課題〉 ところが、このような従来のワイヤーボンダーのスプー
ルマウンターは外気からワイヤー２０を完璧に遮断して
いないため、ワイヤー２０が大気中で多少酸化されてし
まうという欠点があった。
またこのようなボンディング作業には、主に貴金属の金
線を使用して来たが、金線は値段が高いので製造原価を
上昇させる要因となっており、更にプラスチックパッケ
ージ工程中に加えられる熱により配線が伸びてしまい製
造歩留りが低下する等、望ましくない問題点があった。
そして、このような問題点を解消すべく機械的強度の高
い銅線を使用したが、この場合にもやはり高温のため容
易に酸化されてしまい、接着力を減少させるという問題
点があった。
本発明は上記のような問題点を解消するために為された
もので、ワイヤーが収容されるスプールマウンターの内
部を外気から完璧に遮断し、銅線又はアルミニウムを使
用する場合にも酸化されないようにしたワイヤーボンダ
ーのスプールマウンター酸化防止システムを提供するこ
とにその目的がある。
本発明の又他の目的は、ポールボンディング作業中のボ
ール形成時にワイヤーの周りに還元雰囲気を形成させて
、引き出されるワイヤーの酸化を防止することにある。
〈課題を解決するための手段〉 上記目的を達成するために本発明は、銅線又はアルミニ
ウムのような酸化金属のワイヤーを利用してワイヤーボ
ンディングをするワイヤーボンダーの酸化防止システム
において、ワイヤー２０が巻かれているスプール２の周
りに還元ガスを周期的に供給してワイヤーの酸化を防止
し、ワイヤー２０を引き出すキャピラリ５の両端に還元
ガスを放出するためのガスチューブ３１．３２を設け、
ガスチューブ３１．３２の何れか一つに選択的に沿わせ
て上記キャピラリ５の下端に位置するようにトーチ３０
を設けたものである。
また別の発明では上記還元ガスを水素と窒素の混合ガス
又はアルゴンと水素の混合ガスとしたものである。
く実　施　例〉 以下、本発明の好適な実施例を添付の第２図〜第４図（
Ｅ）を参照して詳細に説明する。この実施例においては
、説明の便宜上第１図（従来）と同一な部分に対しては
同一符号を使用し、重複する説明は省略する。
カバー１の内側上面にはデイフユーザ−（ｄｉｆｆｕｓ
ｅｒ　＊散気装置）６が設けられ、このデイフユーザ−
６は連結チューブ７を通じて延長された導管８によって
ガス容器９に連通されている。そして、導管８の途中に
は、ガス流ＨＪ節器１０とソレノイドバルブ１１が設け
られている。このソレノイドバルブ１１はタイマー１２
によって周期的に１Ｏ秒間開放され、２０秒間は閉鎖さ
れるようにしである。このタイマー１２は、通常の電子
タイマー１２ａから計数・発信される信号が増幅部１２
ｂを経てソレノイドバルブ１１に印加され、これを開閉
駆動し得るものであれば、どのような形式％式％ 一方、ワイヤー２０を引き出すことができるキャピラリ
５の両端には、ガスチューブ３１．３２が設けられ、−
側のガスチューブ３２に沿わせてキャピラリ５の下端に
位置するようにトーチ３０が設けられている（第３図参
照）。
ワイヤー２０は従来のようにカバー１内のスプール２に
巻かれ、導出管３を経て導出され、多数のクランプ４に
よってキャピラリ５に案内される。
そして、タイマー１２が周期的にソレノイドバルブ１１
を開閉するので、ガス容器９内の不活性ガスはガス流量
調節器１０を経てカバー１内に注入され、１０秒間の注
入そして２０秒間の停止がこの順序で反復されることに
なる。この時に使用される不活性ガスとしては、水素と
窒素の混合ガス又は水素とアルゴンガスの混合ガスを使
用する。
又ガス供給量は、カバー１内の圧力がワイヤー２０のス
プール２からの送り出しが順調に行なわれる程度になる
ように、ガス流量調節器１０で調節される。つまり、カ
バー１内に注入された不活性ガスはデイフユーザ−６に
よって直接ワイヤー２０と接触せずに周りに拡散されて
間接接触し、ワイヤー２０へ圧力を加えない。そして、
これによりカバー１内のワイヤー２０の周りが還元雰囲
気に形成され、ワイヤー２０の酸化が防止される。
スプール２から解かれたワイヤー２０は導出管３を通じ
てクランプ４に支持され、第４図（Ａ）のようにキャピ
ラリ５の中央の通孔を通じて所定長さ引き出される。
次に第４図（Ｂ）のように、引き出されたワイヤー２０
がトーチ３０の近辺を経る瞬間に放電が行なわれ、ワイ
ヤー２０が溶融され、その表面張力によってボール２１
を形成する。この時即ちトーチ３０の放電によりワイヤ
ー２０がボール２１を形成する時に、ボール２１の表面
に酸化膜が形成されないように、ボール２１の左右から
ガスチューブ３１．３２を通じて還元ガスが吹き込まれ
（放出され）でボール２１の酸化が防止される。
還元ガスとしては水素と窒素の混合ガス（Ｈ２＋Ｎ２）
、又はアルゴンと水素の混合ガス（Ａ　ｒ　＋Ｈ，）を
使用したが、これに限らず各種のものを使用することが
できる。
次にキャピラリ５の端に形成されているボール２１を第
４図（Ｃ）のように半導体チップ４１の上に置かれてい
るパッド４２に接合することになるが、この過程におい
てもワイヤー２０が酸化されないように持続的に還元ガ
スを吹き込んでボール２１の周りに還元雰囲気を形成す
ることが望ましい。
こうしてボール２１をバッド４２に接着した後、キャピ
ラリ５からワイヤー２０を引き出して第４図ＣＤ）のよ
うに右側（リードフレーム４３側）に移動させ、第４図
（Ｅ）のように接着力を良好にすべく形成されたリード
フレーム４３の鍍金部上に融着させてからワイヤー２０
を切断する。
上記のような作業の反復過程によってワイヤーボンディ
ングをすることになるが、このような過程においてもワ
イヤー２０の酸化を防止するため継続的に還元ガスを吹
き込んで還元雰囲気を形成させることが望ましい。
〈発明の効果〉 上記のように本発明では、チップとリードフレームを連
結するワイヤーの酸化が還元雰囲気中での工程により防
止され、金線ではなく銅線を利用したワイヤーボンディ
ングができるので製造原価の低減はもちろんのことデバ
イスの伝達速度を増加させるこができ、合わせて機械的
な強度の高い銅線を使用したのでパッケージモールディ
ング時のワイヤーのループ不良も防止することができ、
製品の信顛度を向上させることができる。又一方、チッ
プのパッド金属であるアルミニウムとの金属間の生成速
度が遅いので製品の信頼性を向上させることができる効
果がある。
【図面の簡単な説明】
第１図は従来のワイヤーボンダーを示した一部破断の説
明図、 第２図は本発明に係る酸化防止システムの実施例を示す
説明図、 第３図は第２図中の■部の拡大断面図、そして第４図（
Ａ）〜（Ｅ）は各々本発明に係るボンディング作業の工
程を表わす第３図相当の断面図である。 ３１、３２ スプール キャピラリ デイフユーザ− ガス容器 ガス流量調節器 ソレノイドバルブ タイマー ワイヤー トーチ ガスチューブ 第２図

Claims (2)

    【特許請求の範囲】
  1. （１）銅線又はアルミニウムのような酸化金属のワイヤ
    ーを利用してワイヤーボンディングをするワイヤーボン
    ダーの酸化防止システムにおいて、ワイヤー２０が巻か
    れているスプール２の周りに還元ガスを周期的に供給し
    てワイヤーの酸化を防止し、ワイヤー２０を引き出すキ
    ャピラリ５の両端に還元ガスを放出するためのガスチュ
    ーブ３１、３２を設け、 ガスチューブ３１、３２の何れか一つに選択的に沿わせ
    て上記キャピラリ５の下端に位置するようにトーチ３０
    を設けてなることを特徴とするワイヤーボンダーの酸化
    防止システム。
  2. （２）還元ガスは水素と窒素の混合ガス又はアルゴンと
    水素の混合ガスを使用することを特徴とする請求項（１
    ）記載のワイヤーボンダーの酸化防止システム。
JP1127972A 1988-06-02 1989-05-23 ワイヤーボンダーの酸化防止システム Expired - Fee Related JPH0618223B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1019880006623A KR920000628B1 (ko) 1988-06-02 1988-06-02 와이어 본더의 스풀마운터 산화방지시스템
KR88-6623 1988-06-30
KR88-8038 1988-06-30
KR1019880008038A KR900001010A (ko) 1988-06-30 1988-06-30 동(銅)선을 이용한 와이어 본딩 방법 및 장치

Publications (2)

Publication Number Publication Date
JPH0225044A true JPH0225044A (ja) 1990-01-26
JPH0618223B2 JPH0618223B2 (ja) 1994-03-09

Family

ID=26627855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1127972A Expired - Fee Related JPH0618223B2 (ja) 1988-06-02 1989-05-23 ワイヤーボンダーの酸化防止システム

Country Status (6)

Country Link
US (1) US4995552A (ja)
JP (1) JPH0618223B2 (ja)
DE (1) DE3915472C2 (ja)
FR (1) FR2632229B1 (ja)
GB (1) GB2220101B (ja)
NL (1) NL192313C (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05138469A (ja) * 1991-09-23 1993-06-01 Takeshi Yanagisawa ２次元運動機構
JPH05211198A (ja) * 1991-12-10 1993-08-20 Nec Corp ワイヤボンディング装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3911027A1 (de) * 1989-04-05 1990-10-11 Siemens Ag Verfahren zum verbinden von anschlusselementen mit lackisolierten draehten
NL9200396A (nl) * 1992-03-03 1993-10-01 Nedap Nv Radiofrequente identificatielabel met relatief grote detectie-afstand en een minimum aantal electronische componenten.
US5603892A (en) * 1994-06-09 1997-02-18 Fujitsu Limited System for maintaining a controlled atmosphere in an electronic circuit package
DE19604287C2 (de) * 1996-02-07 1999-12-09 Fraunhofer Ges Forschung Vorrichtung zur Beaufschlagung eines Drahtendes in einer Drahtbondeinrichtung mit einem Schutzmedium
JP2003503852A (ja) * 1999-06-28 2003-01-28 ユナキス・バルツェルス・アクチェンゲゼルシャフト 構造部材およびその製造方法
US6373137B1 (en) 2000-03-21 2002-04-16 Micron Technology, Inc. Copper interconnect for an integrated circuit and methods for its fabrication
US6630910B2 (en) 2001-10-29 2003-10-07 Marconi Communications Inc. Wave antenna wireless communication device and method
US20070251980A1 (en) * 2006-04-26 2007-11-01 Gillotti Gary S Reduced oxidation system for wire bonding
CN105149808B (zh) * 2015-09-30 2017-03-29 河南科技大学 一种可控制钎焊球大小的钎焊球加工装置及加工方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3125906A (en) * 1964-03-24 Lead bonding machine
JPS55128396A (en) * 1979-03-26 1980-10-04 Packer Eng Ass Zn alloy wax and its use
US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation
US4549059A (en) * 1982-11-24 1985-10-22 Nec Corporation Wire bonder with controlled atmosphere
JPS607137A (ja) * 1983-06-27 1985-01-14 Shinkawa Ltd ワイヤボンダ用ボ−ル形成装置
US4732313A (en) * 1984-07-27 1988-03-22 Kabushiki Kaisha Toshiba Apparatus and method for manufacturing semiconductor device
JPS61159743A (ja) * 1985-01-07 1986-07-19 Toshiba Corp ワイヤボンディング方法および装置
US4674671A (en) * 1985-11-04 1987-06-23 Olin Corporation Thermosonic palladium lead wire bonding
DE3851901T2 (de) * 1987-01-26 1995-04-13 Hitachi Ltd Anschweissen eines Drahtes.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05138469A (ja) * 1991-09-23 1993-06-01 Takeshi Yanagisawa ２次元運動機構
JPH05211198A (ja) * 1991-12-10 1993-08-20 Nec Corp ワイヤボンディング装置

Also Published As

Publication number Publication date
DE3915472C2 (de) 1995-11-30
US4995552A (en) 1991-02-26
NL192313C (nl) 1997-05-07
NL8901395A (nl) 1990-01-02
FR2632229A1 (fr) 1989-12-08
FR2632229B1 (fr) 1991-11-29
GB2220101B (en) 1992-09-09
JPH0618223B2 (ja) 1994-03-09
GB2220101A (en) 1989-12-28
DE3915472A1 (de) 1989-12-07
GB8912761D0 (en) 1989-07-19
NL192313B (nl) 1997-01-06

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