JPH022309B2 - - Google Patents

Info

Publication number
JPH022309B2
JPH022309B2 JP56138105A JP13810581A JPH022309B2 JP H022309 B2 JPH022309 B2 JP H022309B2 JP 56138105 A JP56138105 A JP 56138105A JP 13810581 A JP13810581 A JP 13810581A JP H022309 B2 JPH022309 B2 JP H022309B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
diode
well
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56138105A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5839053A (ja
Inventor
Kazuki Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56138105A priority Critical patent/JPS5839053A/ja
Publication of JPS5839053A publication Critical patent/JPS5839053A/ja
Publication of JPH022309B2 publication Critical patent/JPH022309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56138105A 1981-09-02 1981-09-02 半導体装置 Granted JPS5839053A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56138105A JPS5839053A (ja) 1981-09-02 1981-09-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138105A JPS5839053A (ja) 1981-09-02 1981-09-02 半導体装置

Publications (2)

Publication Number Publication Date
JPS5839053A JPS5839053A (ja) 1983-03-07
JPH022309B2 true JPH022309B2 (enrdf_load_html_response) 1990-01-17

Family

ID=15214058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138105A Granted JPS5839053A (ja) 1981-09-02 1981-09-02 半導体装置

Country Status (1)

Country Link
JP (1) JPS5839053A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691226B2 (ja) * 1988-07-12 1994-11-14 三洋電機株式会社 半導体集積回路

Also Published As

Publication number Publication date
JPS5839053A (ja) 1983-03-07

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