JPH022306B2 - - Google Patents

Info

Publication number
JPH022306B2
JPH022306B2 JP61196292A JP19629286A JPH022306B2 JP H022306 B2 JPH022306 B2 JP H022306B2 JP 61196292 A JP61196292 A JP 61196292A JP 19629286 A JP19629286 A JP 19629286A JP H022306 B2 JPH022306 B2 JP H022306B2
Authority
JP
Japan
Prior art keywords
region
gate
anode
cathode
nax
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61196292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62247566A (ja
Inventor
Junichi Nishizawa
Tadahiro Oomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP19629286A priority Critical patent/JPS62247566A/ja
Publication of JPS62247566A publication Critical patent/JPS62247566A/ja
Publication of JPH022306B2 publication Critical patent/JPH022306B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
JP19629286A 1986-08-21 1986-08-21 静電誘導サイリスタ Granted JPS62247566A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19629286A JPS62247566A (ja) 1986-08-21 1986-08-21 静電誘導サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19629286A JPS62247566A (ja) 1986-08-21 1986-08-21 静電誘導サイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP836679A Division JPS5599774A (en) 1979-01-26 1979-01-26 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS62247566A JPS62247566A (ja) 1987-10-28
JPH022306B2 true JPH022306B2 (enrdf_load_stackoverflow) 1990-01-17

Family

ID=16355375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19629286A Granted JPS62247566A (ja) 1986-08-21 1986-08-21 静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS62247566A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0374877A (ja) * 1989-08-15 1991-03-29 Matsushita Electric Works Ltd 半導体装置
JP2509127B2 (ja) * 1992-03-04 1996-06-19 財団法人半導体研究振興会 静電誘導デバイス

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5510152B2 (enrdf_load_stackoverflow) * 1974-03-08 1980-03-14
JPS5931869B2 (ja) * 1976-05-06 1984-08-04 三菱電機株式会社 静電誘導形サイリスタ
JPS6042624B2 (ja) * 1978-02-24 1985-09-24 株式会社日立製作所 電界効果型スイツチング素子

Also Published As

Publication number Publication date
JPS62247566A (ja) 1987-10-28

Similar Documents

Publication Publication Date Title
JPS6221275B2 (enrdf_load_stackoverflow)
KR100223198B1 (ko) 높은 강복 전압을 갖는 반도체 장치 및 그 제조 방법
US6091107A (en) Semiconductor devices
US5151762A (en) Semiconductor device, fabricating method thereof and flash control device using the semiconductor device
US7816706B2 (en) Power semiconductor device
JP2016115847A (ja) 半導体装置
US5387805A (en) Field controlled thyristor
CN111834437A (zh) 元胞结构及其应用的半导体组件
GB2612636A (en) Semiconductor device
US20170256614A1 (en) Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
JPH098301A (ja) 電力用半導体装置
JP7721982B2 (ja) 半導体装置
JP2010206111A (ja) 半導体装置
JP2024083467A (ja) 半導体装置
JP2019083354A (ja) 半導体装置
JPH022306B2 (enrdf_load_stackoverflow)
JP3189576B2 (ja) 半導体装置
JPH0241182B2 (enrdf_load_stackoverflow)
JPH022307B2 (enrdf_load_stackoverflow)
KR102170068B1 (ko) 바이폴라 논-펀치-스루 전력 반도체 디바이스
JPH0637335A (ja) 埋込み構造もしくは切込み構造を有する静電誘導ダイオード
JP3214242B2 (ja) 半導体装置
JP3214236B2 (ja) 半導体装置及び電力変換装置
KR102100857B1 (ko) 전력 반도체 소자
JP3589091B2 (ja) 半導体装置