JPH0222569B2 - - Google Patents
Info
- Publication number
- JPH0222569B2 JPH0222569B2 JP55098574A JP9857480A JPH0222569B2 JP H0222569 B2 JPH0222569 B2 JP H0222569B2 JP 55098574 A JP55098574 A JP 55098574A JP 9857480 A JP9857480 A JP 9857480A JP H0222569 B2 JPH0222569 B2 JP H0222569B2
- Authority
- JP
- Japan
- Prior art keywords
- equivalent
- conductivity type
- emitter
- zero
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
Landscapes
- Electronic Switches (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9857480A JPS5723266A (en) | 1980-07-18 | 1980-07-18 | Photocontrol semiconductor switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9857480A JPS5723266A (en) | 1980-07-18 | 1980-07-18 | Photocontrol semiconductor switch |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5723266A JPS5723266A (en) | 1982-02-06 |
JPH0222569B2 true JPH0222569B2 (enrdf_load_stackoverflow) | 1990-05-21 |
Family
ID=14223435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9857480A Granted JPS5723266A (en) | 1980-07-18 | 1980-07-18 | Photocontrol semiconductor switch |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723266A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5943630A (ja) * | 1982-09-02 | 1984-03-10 | Sharp Corp | ソリツドステ−トリレ− |
-
1980
- 1980-07-18 JP JP9857480A patent/JPS5723266A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5723266A (en) | 1982-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4967256A (en) | Overvoltage protector | |
JP3180831B2 (ja) | 絶縁ゲート制御半導体装置 | |
JPH0693512B2 (ja) | 縦形mosfet | |
US8338855B2 (en) | Voltage-controlled bidirectional switch | |
US4994884A (en) | Gate-controlled bi-directional semiconductor switching device | |
US4286279A (en) | Multilayer semiconductor switching devices | |
JP2766071B2 (ja) | 複合半導体装置及びそれを使つた電力変換装置 | |
US4939564A (en) | Gate-controlled bidirectional semiconductor switching device with rectifier | |
JPH08502858A (ja) | 電界効果により制御される半導体素子 | |
JPH0654796B2 (ja) | 複合半導体装置 | |
JPH04170815A (ja) | ハイサイド・スイッチ回路及び半導体装置 | |
JPS637471B2 (enrdf_load_stackoverflow) | ||
JPH0222569B2 (enrdf_load_stackoverflow) | ||
JPH04280670A (ja) | スイッチ回路およびゲート電圧クランプ型半導体装置 | |
JP2980106B2 (ja) | 集積mosパワー・トランジスタを電圧勾配から保護するための構成部品 | |
JPS623987B2 (enrdf_load_stackoverflow) | ||
JPS6211787B2 (enrdf_load_stackoverflow) | ||
JP2604628B2 (ja) | 双方向性スイツチング装置 | |
US20240186316A1 (en) | Scr structure with high noise immunity | |
JP2557984B2 (ja) | 半導体装置の入力保護回路 | |
JPH06291320A (ja) | 絶縁ゲート型バイポーラトランジスタ | |
US6624502B2 (en) | Method and device for limiting the substrate potential in junction isolated integrated circuits | |
JP3130219B2 (ja) | 半導体装置 | |
JPS6123666B2 (enrdf_load_stackoverflow) | ||
JPH09283755A (ja) | 半導体装置 |