JPH0220137B2 - - Google Patents

Info

Publication number
JPH0220137B2
JPH0220137B2 JP58235326A JP23532683A JPH0220137B2 JP H0220137 B2 JPH0220137 B2 JP H0220137B2 JP 58235326 A JP58235326 A JP 58235326A JP 23532683 A JP23532683 A JP 23532683A JP H0220137 B2 JPH0220137 B2 JP H0220137B2
Authority
JP
Japan
Prior art keywords
laser
laser beam
silicon layer
total reflection
reflection mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58235326A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60126840A (ja
Inventor
Shigenobu Akyama
Yasuaki Terui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58235326A priority Critical patent/JPS60126840A/ja
Publication of JPS60126840A publication Critical patent/JPS60126840A/ja
Publication of JPH0220137B2 publication Critical patent/JPH0220137B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Recrystallisation Techniques (AREA)
JP58235326A 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法 Granted JPS60126840A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58235326A JPS60126840A (ja) 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58235326A JPS60126840A (ja) 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法

Publications (2)

Publication Number Publication Date
JPS60126840A JPS60126840A (ja) 1985-07-06
JPH0220137B2 true JPH0220137B2 (https=) 1990-05-08

Family

ID=16984445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58235326A Granted JPS60126840A (ja) 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法

Country Status (1)

Country Link
JP (1) JPS60126840A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2605090B2 (ja) * 1988-03-28 1997-04-30 東京エレクトロン株式会社 ビームアニール装置
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
US6977775B2 (en) 2002-05-17 2005-12-20 Sharp Kabushiki Kaisha Method and apparatus for crystallizing semiconductor with laser beams
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
WO2005124842A1 (en) * 2004-06-18 2005-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472489U (https=) * 1977-11-01 1979-05-23
JPS56114390A (en) * 1980-02-15 1981-09-08 Sumitomo Electric Ind Ltd Laser apparatus
JPS57128024A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Single crystallization for non-single crystalline semiconductor layer

Also Published As

Publication number Publication date
JPS60126840A (ja) 1985-07-06

Similar Documents

Publication Publication Date Title
US6437284B1 (en) Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same
US8629522B2 (en) Laser annealing method and device
KR101115077B1 (ko) 레이저 박막 폴리실리콘 어닐링 시스템
KR101167324B1 (ko) 레이저 박막 폴리실리콘 어닐링 광학 시스템
US5357365A (en) Laser beam irradiating apparatus enabling uniform laser annealing
JPH03286518A (ja) 半導体薄膜の製造方法
JP2004103628A (ja) レーザアニール装置及びｔｆｔ基板のレーザアニール方法
JPH0220137B2 (https=)
JPH06291038A (ja) 半導体材料製造装置
US20180257174A1 (en) Laser processing method and laser processing apparatus
KR102776154B1 (ko) 반도체 재료를 처리하기 위한 방법 및 광학 시스템(mehtod and optical system for processing a semiconductor material)
JP3017277B2 (ja) 光アニール装置
JPH01115117A (ja) ビーム均一化光学装置
KR100787236B1 (ko) 극초단 펄스 레이저 가공 장치 및 방법
JP3537424B2 (ja) レーザビーム均一照射光学系
JPS60145986A (ja) 薄膜結晶成長法
JPH03289128A (ja) 半導体薄膜結晶層の製造方法
US20260124699A1 (en) Laser processing apparatus and electronic device manufacturing method
JP2006080205A (ja) レーザ加工装置及びレーザ加工方法
JP2003287704A (ja) レーザビーム均一照射光学系
JPH0571553B2 (https=)
JPS60127294A (ja) ビ−ム形状成形器
JP2003211278A (ja) レーザ加工装置
JPS62243314A (ja) 半導体装置の製造方法
JP2007036080A (ja) レーザアニール装置