JPS60126840A - Ｓｏｉ形成用レーザ照射方法 - Google Patents

Ｓｏｉ形成用レーザ照射方法

Info

Publication number
JPS60126840A
JPS60126840A JP58235326A JP23532683A JPS60126840A JP S60126840 A JPS60126840 A JP S60126840A JP 58235326 A JP58235326 A JP 58235326A JP 23532683 A JP23532683 A JP 23532683A JP S60126840 A JPS60126840 A JP S60126840A
Authority
JP
Japan
Prior art keywords
laser beam
laser
wave
incide
splitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58235326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0220137B2 (https=
Inventor
Shigenobu Akiyama
秋山　重信
Yasuaki Terui
照井　康明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58235326A priority Critical patent/JPS60126840A/ja
Publication of JPS60126840A publication Critical patent/JPS60126840A/ja
Publication of JPH0220137B2 publication Critical patent/JPH0220137B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Recrystallisation Techniques (AREA)
JP58235326A 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法 Granted JPS60126840A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58235326A JPS60126840A (ja) 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58235326A JPS60126840A (ja) 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法

Publications (2)

Publication Number Publication Date
JPS60126840A true JPS60126840A (ja) 1985-07-06
JPH0220137B2 JPH0220137B2 (https=) 1990-05-08

Family

ID=16984445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58235326A Granted JPS60126840A (ja) 1983-12-13 1983-12-13 Ｓｏｉ形成用レーザ照射方法

Country Status (1)

Country Link
JP (1) JPS60126840A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
JPH01246828A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
US7410508B2 (en) 2002-05-17 2008-08-12 Sharp Kabushiki Kaisha Apparatus for crystallizing semiconductor with laser beams
JP2012099844A (ja) * 2004-06-18 2012-05-24 Semiconductor Energy Lab Co Ltd レーザ照射方法及びレーザ照射装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472489U (https=) * 1977-11-01 1979-05-23
JPS56114390A (en) * 1980-02-15 1981-09-08 Sumitomo Electric Ind Ltd Laser apparatus
JPS57128024A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Single crystallization for non-single crystalline semiconductor layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472489U (https=) * 1977-11-01 1979-05-23
JPS56114390A (en) * 1980-02-15 1981-09-08 Sumitomo Electric Ind Ltd Laser apparatus
JPS57128024A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Single crystallization for non-single crystalline semiconductor layer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
JPH01246828A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
US7410508B2 (en) 2002-05-17 2008-08-12 Sharp Kabushiki Kaisha Apparatus for crystallizing semiconductor with laser beams
US7528023B2 (en) 2002-05-17 2009-05-05 Sharp Kabushiki Kaisha Apparatus for crystallizing semiconductor with laser beams
US7541230B2 (en) 2002-05-17 2009-06-02 Sharp Kabushiki Kaisha Method and apparatus for crystallizing semiconductor with laser beams
US7660042B2 (en) 2002-05-17 2010-02-09 Sharp Kabushiki Kaisha Apparatus for crystallizing semiconductor with laser beams
US7927935B2 (en) 2002-05-17 2011-04-19 Sharp Kabushiki Kaisha Method for crystallizing semiconductor with laser beams
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
JP2012099844A (ja) * 2004-06-18 2012-05-24 Semiconductor Energy Lab Co Ltd レーザ照射方法及びレーザ照射装置

Also Published As

Publication number Publication date
JPH0220137B2 (https=) 1990-05-08

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