JPH0219969B2 - - Google Patents
Info
- Publication number
- JPH0219969B2 JPH0219969B2 JP57085677A JP8567782A JPH0219969B2 JP H0219969 B2 JPH0219969 B2 JP H0219969B2 JP 57085677 A JP57085677 A JP 57085677A JP 8567782 A JP8567782 A JP 8567782A JP H0219969 B2 JPH0219969 B2 JP H0219969B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- processing
- opening
- wire conveyor
- plasma reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 235000012431 wafers Nutrition 0.000 claims description 148
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 9
- 230000007723 transport mechanism Effects 0.000 claims description 6
- 230000003028 elevating effect Effects 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Feeding Of Workpieces (AREA)
- Structure Of Belt Conveyors (AREA)
- Framework For Endless Conveyors (AREA)
- Drying Of Semiconductors (AREA)
- Automatic Assembly (AREA)
Description
【発明の詳細な説明】
本発明は自動枚葉処理型プラズマ反応処理装置
に関し、さらに詳しくはウエハー搬送機構を改良
したプラズマ反応処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an automatic single wafer processing type plasma reaction processing apparatus, and more particularly to a plasma reaction processing apparatus with an improved wafer transfer mechanism.
近年半導体産業においてガスプラズマ反応処理
装置を用いてウエハーのエツチングやフオトレジ
ストの灰化剥離が広く行なわれるようになつてき
た。初期の処理装置はバツチ式、即ちウエハー20
〜25枚をウエハー立て上に並べて反応筒内に入
れ、一括処理を行うものであつた。しかし回路超
微細化、ウエハーの大型化、製造ラインの省力化
が進むにつれ、上記装置では加工精度が悪い、各
ウエハー間およびウエハー各部内の処理バラツキ
が大きい、手作業での並べかえ等作業の手間がか
かる、取扱い時にウエハーの損傷が多い等の欠点
があり、特に大型ウエハーでこれらの欠点が一層
問題視されるようになつた。 In recent years, in the semiconductor industry, gas plasma reaction processing equipment has become widely used for etching wafers and ashing and stripping photoresists. Early processing equipment was batch type, i.e. 20 wafers.
Up to 25 wafers were arranged on a wafer stand and put into a reaction tube for batch processing. However, with the progress of ultra-fine circuits, larger wafers, and labor-saving production lines, the above-mentioned equipment has poor processing accuracy, large processing variations between each wafer and within each part of the wafer, and laborious work such as manual rearranging. There are disadvantages such as high wafer pressure and frequent damage to the wafer during handling, and these disadvantages have become more problematic especially with large wafers.
この分野における先行技術として例えば、米国
特許第4151034号には連続的かつ自動的にガスプ
ラズマエツチングを行なうガスプラズマエツチン
グ連続処理装置について記載されているが、エツ
チング反応室内で被処理物をコンベアに載置し移
動させながらエツチングを行なうためエツチング
のバラツキがあつて好ましくない。 As a prior art in this field, for example, U.S. Pat. No. 4,151,034 describes a continuous gas plasma etching processing apparatus that performs gas plasma etching continuously and automatically. Since etching is performed while placing and moving, there is undesirable variation in etching.
また米国特許第4189923号はプラズマ反応処理
装置に関し、傾斜した装置を用い、被処理物のウ
エハーを滑走させ、所定の位置まで届けば滑走を
停止する機構を記載している。しかしながらウエ
ハーは薄くて、もろいために滑走を停止させるス
トツパー（爪または回転ブロツク）に当たるとき
破損し易い欠点を有する。 Further, US Pat. No. 4,189,923 relates to a plasma reaction processing apparatus, and describes a mechanism that uses an inclined apparatus to slide a wafer to be processed, and stops sliding when it reaches a predetermined position. However, the wafer has the disadvantage that it is thin and brittle and is easily damaged when it hits a stopper (claw or rotating block) that stops sliding.
さらに米国特許第4094722号のガスプラズマエ
ツチング連続処理装置においては、気体プラズマ
よりのガスをエツチングを実施する気密な容器に
搬入し、この容器内へは被エツチング材料を多量
に、また連続的に供給するために前記気密な容器
内外に回転する部材を設置する旨記載されている
が、前記エツチング工程は一定の圧力雰囲気で実
施されるので前記気密な容器に接続した気密な中
空部材を設けてこの中空部材に回転部材を収納す
る必要があり、また気密な容器と離れた位置に開
閉可能なハツチを設けてその下を被エツチング材
供給部とする必要があるという煩雑さを有する。 Furthermore, in the gas plasma etching continuous processing apparatus disclosed in U.S. Pat. No. 4,094,722, gas from the gas plasma is carried into an airtight container in which etching is performed, and a large amount of the material to be etched is continuously supplied into the container. Although it is described that a rotating member is installed inside and outside the airtight container in order to perform etching, since the etching process is carried out in a constant pressure atmosphere, an airtight hollow member connected to the airtight container is provided. The rotary member must be housed in the hollow member, and a hatch that can be opened and closed must be provided at a position separate from the airtight container, and the area under the hatch must be used as a supply section for the material to be etched, which is complicated.
そこで本発明者らは先に提案した特願昭52−
85879号、特願昭52−159798号の枚葉処理方式に
したところ、各ウエハー間の処理バラツキが小さ
くなり、大型ウエハーでも中央、周辺各部の処理
バラツキが小さくなり、超微細化処理が可能とな
り、人手がかからず、大型ウエハーの作業中の損
傷がなくなる等、従来装置の欠点を十分補い、し
かも１枚当たりの処理時間が短いといる画期的に
優れた装置が得られた。しかしながらこの装置に
おいては搬送機構の一部がアーム式となつてお
り、被処理物のサイズによりウエハー吸盤の交換
を必要とし、また被処理物の重さの違いによつて
吸着部の大きさの選定および吸着部からウエハー
をウエハーテーブル上に載置するに際し、ウエハ
ーに損傷をあたえるという不都合があつた。 Therefore, the inventors of the present invention proposed a patent application filed in 1973-
By adopting the single wafer processing method described in No. 85879 and Japanese Patent Application No. 159798/1985, processing variations between each wafer are reduced, and processing variations in the center and peripheral parts of large wafers are also reduced, making ultra-fine processing possible. An epoch-makingly superior device was obtained, which fully compensated for the shortcomings of conventional devices, such as requiring no labor and eliminating damage during the operation of large wafers, and moreover, the processing time per wafer was short. However, in this device, part of the transport mechanism is an arm type, and the wafer suction cup needs to be replaced depending on the size of the workpiece, and the size of the suction part may vary depending on the weight of the workpiece. There is an inconvenience in that the wafer is damaged when selecting and placing the wafer on the wafer table from the suction section.
本発明者らはさらに鋭意検討を重ねた結果、従
来のウエハーテーブルの軸上中央にウエハーを受
け渡しするウエハー仮載帯台を設けたことによ
り、本発明の目的を達成することができた。 As a result of further intensive studies, the inventors of the present invention were able to achieve the object of the present invention by providing a wafer temporary loading platform for transferring wafers at the axial center of a conventional wafer table.
本発明の目的は各種の大きさ、形状、材質を有
する被処理物たる半導体ウエハーを容易に搬送し
得る自動枚葉処理型プラズマ反応処理装置を提供
するにある。 An object of the present invention is to provide an automatic single-wafer processing type plasma reaction processing apparatus that can easily transport semiconductor wafers having various sizes, shapes, and materials.
本発明のもう一つの目的は各ウエハー処理のバ
ラツキが小さく、作業中のウエハーの損傷がな
く、短時間に容易に処理を行なうことができる自
動枚葉処理型プラズマ反応処理装置を提供するに
ある。 Another object of the present invention is to provide an automatic single wafer processing type plasma reaction processing apparatus that has small variations in processing each wafer, does not damage wafers during operation, and can easily perform processing in a short period of time. .
本発明のさらにもう一つの目的はユニツト化の
容易な自動枚葉処理型プラズマ反応処理装置を提
供するにある。 Yet another object of the present invention is to provide an automatic single wafer processing type plasma reaction processing apparatus that is easy to unitize.
本発明はウエハー搬送機構、ウエハー仮載置
台、ウエハー処理テーブルおよびプラズマ反応処
理室から成るウエハーのプラズマ反応処理装置に
おいて、
(1) 一定の間隔をおいて配設された一対の開閉式
ウエハー搬送ワイヤーコンベア、該ワイヤーコ
ンベアの開閉手段を含むウエハー搬送機構によ
り、被処理ウエハーがプラズマ反応処理室の下
部に配設されるウエハー処理テーブル直上に搬
送される工程、
(2) 昇降シリンダーにより上下動するウエハー処
理テーブルの軸上中央に気密に嵌着され、それ
と一体をなすシヤフトと共に昇降シリンダーに
より上下動するウエハー仮載置台が上昇し、ウ
エハー処理テーブル直上にあるウエハーを、仮
載置上に載置したのち、開閉式ウエハー搬送ワ
イヤーコンベアが相互に離反して開き、ウエハ
ー処理テーブルが上昇してプラズマ反応処理室
を密閉する工程、
(3) 被処理ウエハーに対し、プラズマ処理を施す
工程、
および
(4) プラズマ処理テーブルを下降せしめたのち、
開閉式ウエハー搬送ワイヤーコンベアが閉じて
元に戻り、ウエハー仮載置台が下降して元に戻
り、ウエハー仮載置台上からプラズマ処理が施
された処理ウエハーをウエハー搬送機構へ移送
する工程を自動制御装置により相互に連動して
被処理ウエハーをプラズマ反応処理する自動枚
葉処理型プラズマ反応処理装置である。 The present invention provides a wafer plasma reaction processing apparatus comprising a wafer transport mechanism, a wafer temporary mounting table, a wafer processing table, and a plasma reaction processing chamber, which includes: (1) a pair of openable and closable wafer transport wires arranged at a constant interval; A process in which a wafer to be processed is transported directly above a wafer processing table disposed at the bottom of a plasma reaction processing chamber by a wafer transport mechanism including a conveyor and an opening/closing means for the wire conveyor; (2) a wafer that is moved up and down by an elevating cylinder; A temporary wafer mounting table, which is airtightly fitted in the center of the processing table on the shaft and moves up and down by an elevating cylinder together with a shaft integrated with it, rises, and the wafer that is directly above the wafer processing table is placed on the temporary mounting table. Afterwards, the retractable wafer transfer wire conveyors separate from each other and open, the wafer processing table rises, and the plasma reaction processing chamber is sealed, (3) the step of performing plasma processing on the wafer to be processed, and (4) ) After lowering the plasma treatment table,
The retractable wafer transfer wire conveyor closes and returns to its original position, the temporary wafer mounting table descends and returns to its original position, and the process of transferring plasma-treated processed wafers from the temporary wafer holding table to the wafer transport mechanism is automatically controlled. This is an automatic single-wafer processing type plasma reaction processing apparatus that performs plasma reaction processing on wafers to be processed in conjunction with each other.
本発明を図によつて説明する。 The present invention will be explained using figures.
第１図においてウエハーカセツト１０にある被
処理ウエハーはカセツトエレベーター１１の下降
により搬送コンベア１３に載せられて図の左方か
ら右方に搬送されプラズマ反応処理室の真下に搬
入されて停止する（第１図Ｂ）。ここに被処理ウ
エハーは被処理ウエハーカセツトに載置されるこ
となく前工程より搬送されてもよい。ウエハー仮
載置台６を上昇させて被処理ウエハーをその上に
載置し（第１図Ｃ）、次いで開閉式ウエハー搬送
ワイヤーコンベア９が相互に離反して開き、その
間をウエハー処理テーブル５が上昇してプラズマ
反応処理室１に気密に嵌合し（第１図Ｄ）、真空
下にプラズマ処理を行なう。プラズマ反応処理は
プラズマガス導入管３よりプラズマ処理ガスを導
入し、高周波電源によりプラズマを発生させて行
なう。反応処理が終了すれば（反応処理の終了は
例えば特願昭52−114977号等の装置により検知を
し終点確認する）、反応処理室内を常圧に戻し、
ウエハー処理テーブルの元の位置まで下降させ、
ウエハー仮載置台を中途まで所定の位置に停止さ
せ、開閉式ウエハー搬送ワイヤーコンベアが閉じ
て元に戻り、ウエハー仮載置台が下降して元に戻
り、処理ウエハーが開閉式ウエハー搬送ワイヤー
コンベヤ９および処理ウエハー搬送コンベア１
３′により搬出され、ウエハーカセツトエレベー
ター１１′の上昇によりウエハーカセツト１０′に
収納される。このときすでに左方ウエハーカセツ
ト１０からは被処理ウエハーがプラズマ反応処理
室真下に搬送されており、順次効率的にプラズマ
反応処理が行なわれる。 In FIG. 1, the wafers to be processed in the wafer cassette 10 are placed on the transfer conveyor 13 by the descent of the cassette elevator 11, and are transferred from the left to the right in the figure, and are carried directly below the plasma reaction processing chamber, where they are stopped. Figure 1B). Here, the wafer to be processed may be transported from the previous process without being placed in the wafer cassette. The wafer temporary mounting table 6 is raised and the wafer to be processed is placed thereon (FIG. 1C), and then the retractable wafer transfer wire conveyors 9 are separated from each other and opened, and the wafer processing table 5 is raised between them. Then, it is hermetically fitted into the plasma reaction processing chamber 1 (FIG. 1D), and plasma processing is performed under vacuum. The plasma reaction treatment is performed by introducing a plasma processing gas through the plasma gas introduction tube 3 and generating plasma using a high frequency power source. When the reaction process is completed (the end of the reaction process is detected by a device such as Japanese Patent Application No. 52-114977, and the end point is confirmed), the pressure inside the reaction process chamber is returned to normal pressure.
Lower the wafer processing table to its original position,
The temporary wafer mounting table is stopped halfway at a predetermined position, the open/close type wafer transfer wire conveyor is closed and returned to its original position, the wafer temporary placement table is lowered and returned to its original position, and the processed wafer is transferred to the open/close type wafer transfer wire conveyor 9 and Processed wafer conveyor 1
The wafer cassette 10' is carried out by the wafer cassette elevator 11' and stored in the wafer cassette 10'. At this time, the wafers to be processed have already been transferred from the left wafer cassette 10 to just below the plasma reaction processing chamber, and the plasma reaction processing is sequentially and efficiently carried out.
前記開閉式ウエハー搬送ワイヤーコンベアの開
閉手段の一つの態様として扇形状に開閉される方
式を挙げることができる。これは第２図に示すよ
うに（Ａは正面図、Ｂ，Ｃは側面図）、昇降シリ
ンダー１４、支持台１５、開閉アーム１６，１
６′、ウエハー搬送ワイヤーコンベアアーム１７，
１７′、モーター１８、クラツチ１９，２０より
なり、昇降シリンダーの昇降と連動して開閉式ウ
エハー搬送ワイヤーコンベア９，９′が扇状に開
閉され、開いているときウエハー処理テーブルが
上下する。 One embodiment of the opening/closing means of the opening/closing type wafer transfer wire conveyor is a fan-shaped opening/closing method. As shown in FIG. 2 (A is a front view, B and C are side views), the lifting cylinder 14, the support base 15, the opening/closing arms 16, 1
6', wafer transfer wire conveyor arm 17,
17', a motor 18, and clutches 19, 20, the opening/closing type wafer transfer wire conveyors 9, 9' are opened and closed in a fan shape in conjunction with the lifting and lowering of the lifting cylinder, and when opened, the wafer processing table moves up and down.
また開閉式ウエハー搬送ワイヤーコンベアの開
閉手段の他の態様として前後水平方向に開閉され
る方式を挙げることができる。これは第３図に示
すように（Ａは正面図、Ｂ，Ｃは側面図）、ウエ
ハー搬送ワイヤーコンベアスライドシヤフト２
１、ウエハー搬送ワイヤーコンベアアーム２２，
２２′、クラツチ２３，２４、アーム開閉用シリ
ンダー２５，２５′よりなり、開閉式ウエハー搬
送ワイヤーコンベアが前後水平方向に開いている
ときウエハー処理テーブルが上下する。 Another example of the opening/closing means of the opening/closing type wafer transfer wire conveyor is one in which the opening/closing means is opened and closed in the front and back horizontal directions. As shown in Figure 3 (A is a front view, B and C are side views), the wafer transfer wire conveyor slide shaft 2
1. Wafer transfer wire conveyor arm 22,
22', clutches 23 and 24, and arm opening/closing cylinders 25 and 25', and when the open/close type wafer transfer wire conveyor is opened in the front and rear horizontal directions, the wafer processing table moves up and down.
本発明の装置における前記半導体ウエハー搬送
機構には、前記図面での説明の如く、未処理ウエ
ハーカセツト、同カセツトエレベーターおよび同
ウエハー搬送コンベアより構成される被処理ウエ
ハー搬送装置と処理ウエハーカセツト、同ウエハ
ーカセツトエレベーターおよび同ウエハー搬送コ
ンベアより構成される処理ウエハー搬送装置を設
けることができ、これらの装置をユニツト化し、
さらに反応処理室をもユニツト化したものとを適
宜組合せ複数連の装置として実際の操作を行なう
ことができる。 As explained in the drawings, the semiconductor wafer transfer mechanism in the apparatus of the present invention includes a wafer transfer device to be processed, which includes an unprocessed wafer cassette, a cassette elevator, and a wafer transfer conveyor, a processed wafer cassette, and a wafer transfer device. A processing wafer transport device consisting of a cassette elevator and a wafer transport conveyor can be provided, and these devices can be integrated into a unit.
Furthermore, it is possible to carry out actual operations as a plurality of units by suitably combining reaction processing chambers into units.
本発明の装置における前記一対の開閉式ウエハ
ー搬送ワイヤーコンベアの間隔は被処理ウエハー
を載置しかつウエハー仮載置台がその間を通過し
得るものであればよい。本発明の装置における前
記ウエハー仮載置台はその大きさが被処理ウエハ
ーをその上に載置しかつ一対の開閉式ウエハー搬
送ワイヤーコンベア間を通過し得るものであれば
よい。 In the apparatus of the present invention, the distance between the pair of open/close type wafer transfer wire conveyors may be such that a wafer to be processed can be placed thereon and a wafer temporary mounting table can pass between them. The wafer temporary mounting table in the apparatus of the present invention may be of any size as long as the wafer to be processed can be placed thereon and the wafer temporary mounting table can be passed between a pair of open/close type wafer transport wire conveyors.
本発明の装置における前記自動制御装置はマイ
クロコンピユーターにより実質上構成されてお
り、相互に連動して順次効率的にプラズマ反応処
理が行なわれる。この際ウエハー仮載置台、ウエ
ハー処理テーブルの上昇、下降およびウエハー搬
送ワイヤーコンベアの開閉動作は圧縮ガス等の作
用によつて行なわれるが、これ以外の方法も採用
できる。またプラズマ反応の電極においても平行
平板型、同心円型等のいずれも可能である。 The automatic control device in the apparatus of the present invention is substantially constituted by a microcomputer, and the plasma reaction processing is carried out sequentially and efficiently in conjunction with each other. At this time, the raising and lowering of the wafer temporary mounting table and the wafer processing table and the opening and closing operations of the wafer transfer wire conveyor are performed by the action of compressed gas or the like, but other methods may also be used. Furthermore, the electrodes for plasma reaction may be either of a parallel plate type or a concentric type.
本発明の装置によれば各ウエハー処理のバラツ
キが小さく、作業中のウエハーの損傷がなく、短
時間に自動的に処理することができる。 According to the apparatus of the present invention, there is little variation in the processing of each wafer, there is no damage to the wafers during operation, and the processing can be performed automatically in a short time.
本発明によれば、また各種の大きさ、形状、材
質を有する被処理物たるウエハーを容易に搬送す
ることができる。例えばウエハーの大きさは1.5
〜６インチ、その形状としては角形、丸形など各
種の形状のもの、または材質としてはシリコンウ
エハー、ガラス板、セラミツク基板等各種のもの
を容易に搬送することができる。 According to the present invention, it is also possible to easily transport wafers, which are objects to be processed, having various sizes, shapes, and materials. For example, the size of a wafer is 1.5
~6 inches, and can easily transport various shapes such as square and round, and various materials such as silicon wafers, glass plates, and ceramic substrates.
さらに本発明の装置について各部をユニツトす
ることにより、例えば故障箇所の表示装置を設け
れば容易に故障箇所を発見し、そのユニツトを迅
速に交換して半導体製造ラインの停止を最小限に
抑え得、修理にも極めて便である。 Furthermore, by uniting each part of the device of the present invention, for example, by providing a display device for the failure location, the failure location can be easily found and the unit can be quickly replaced, minimizing the stoppage of the semiconductor manufacturing line. It is also extremely convenient for repairs.
第１図Ａ〜第１図Ｄは本発明装置の一実施例の
正面図で、第１図Ａ〜第１図Ｄにより被処理ウエ
ハーの搬送からプラズマ反応処理に到る各状態を
示す。第２図Ａ〜第２図Ｃおよび第３図Ａ〜第３
図Ｃは開閉式ウエハー搬送ワイヤーコンベアの開
閉方式を示す詳細図で、第２図は扇形状開閉式で
あり、第２図Ａは正面図、第２図Ｂは側面図、第
２図Ｃは開いた状態の側面図を示す。第３図は前
後水平方向開閉式であり、第３図Ａは正面図、第
３図Ｂは側面図、第３図Ｃは開いた状態の側面図
を示す。
１……プラズマ反応処理室、２，２……電極、
３……プラズマガス導入管、４……真空系配管、
５……ウエハー処理テーブル、６……ウエハー仮
載置台、７，８，１４……昇降シリンダー、９，
９′……開閉式ウエハー搬送ワイヤーコンベア、
１０，１０′……ウエハーカセツト、１１，１
１′……ウエハーカセツトエレベーター、１２，
１２′……エレベーター上下動装置、１３，１
３′……ウエハー搬送コンベア、１５……支持台、
１６，１６′……開閉アーム、１８……モーター、
１７，１７′……ウエハー搬送ワイヤーコンベア
アーム、１９，２０，２３，２４……クラツチ、
２１……ウエハー搬送ワイヤーコンベアスライド
シヤフト、２２，２２′……ウエハー搬送ワイヤ
ーコンベアアーム、２５，２５′……アーム開閉
用シリンダー。
FIGS. 1A to 1D are front views of one embodiment of the apparatus of the present invention, and FIGS. 1A to 1D show each state from transport of a wafer to be processed to plasma reaction processing. Figures 2A to 2C and Figures 3A to 3
Figure C is a detailed view showing the opening/closing method of the opening/closing type wafer transfer wire conveyor. Figure 2 is a fan-shaped opening/closing type. Figure 2A is a front view, Figure 2B is a side view, and Figure 2C is a side view. A side view of the open state is shown. FIG. 3 shows a type that can be opened and closed in the front and rear horizontal directions; FIG. 3A shows a front view, FIG. 3B shows a side view, and FIG. 3C shows a side view in an open state. 1... Plasma reaction treatment chamber, 2, 2... Electrode,
3...Plasma gas introduction pipe, 4...Vacuum system piping,
5...Wafer processing table, 6...Wafer temporary mounting table, 7, 8, 14... Lifting cylinder, 9,
9′...Openable/closeable wafer transfer wire conveyor,
10,10'...Wafer cassette, 11,1
1'...Wafer cassette elevator, 12,
12'...Elevator vertical movement device, 13,1
3′...Wafer transfer conveyor, 15...Support stand,
16, 16'...opening/closing arm, 18...motor,
17, 17'... Wafer transfer wire conveyor arm, 19, 20, 23, 24... Clutch,
21... Wafer transfer wire conveyor slide shaft, 22, 22'... Wafer transfer wire conveyor arm, 25, 25'... Arm opening/closing cylinder.
Claims (1)
ハ一処理テーブルおよびプラズマ反応処理室から
成るウエハーのプラズマ反応処理装置において、 (1) 一定の間隔をおいて配設された一対の開閉式
ウエハー搬送ワイヤーコンベア、該ワイヤーコ
ンベアの開閉手段を含むウエハー搬送機構によ
り被処理ウエハーがプラズマ反応処理室の下部
に配設されるウエハー処理テーブル直上に搬送
される工程、 (2) 昇降シリンダーにより上下動するウエハー処
理テーブルの軸上中央に気密に嵌着され、それ
と一体をなすシヤフトと共に昇降シリンダーに
より上下動するウエハー仮載置台が上昇し、ウ
エハー処理テーブル直上にあるウエハーを仮載
置上に載置したのち、開閉式ウエハー般送ワイ
ヤーコンベアが相互に離反して開き、ウエハー
処理テーブルが上昇してプラズマ反応処理室を
密閉する工程、 (3) 被処理ウエハーに対しプラズマ処理を施す工
程および (4) プラズマ処理テーブルを下降せしめたのち、
開閉式ウエハー搬送ワイヤーコンベアが閉じて
元に戻り、ウエハー仮載置台が下降して元に戻
り、ウエハー仮載置台上からプラズマ処理が施
された処理ウエハーをウエハー搬送機構へ移送
する工程を自動制御装置により相互に連動して
被処理ウエハーをプラズマ反応処理する自動枚
葉処理型プラズマ反応処理装置。 ２ 開閉式ウエハー搬送ワイヤーコンベアの開閉
手段が昇降シリンダー、支持台、開閉アーム、ウ
エハー搬送ワイヤーコンベアアーム、モーター、
クラツチより成り昇降シリンダーの昇降と連動し
て開閉式ウエハー搬送ワイヤーコンベアが扇形状
に開閉されるものである特許請求の範囲第１項記
載の自動枚葉処理型プラズマ反応処理装置。 ３ 開閉式ウエハー搬送ワイヤーコンベアの開閉
手段がウエハー搬送ワイヤーコンベアスライドシ
ヤフト、ウエハー搬送ワイヤーコンベアアーム、
クラツチ、アーム開閉用シリンダーより成り開閉
式ウエハー搬送ワイヤーコンベアが前後水平方向
に開閉されるものである特許請求の範囲第１項記
載の自動枚葉処理型プラズマ反応処理装置。[Scope of Claims] 1. A wafer plasma reaction processing apparatus consisting of a wafer transfer mechanism, a wafer temporary mounting table, a wafer processing table, and a plasma reaction processing chamber, (1) a pair of wafers arranged at a constant interval; A process in which the wafer to be processed is transported directly above the wafer processing table disposed at the lower part of the plasma reaction processing chamber by a wafer transport mechanism including an opening/closing wafer transport wire conveyor and an opening/closing means for the wire conveyor; (2) by an elevating cylinder; A temporary wafer mounting table that is airtightly fitted in the center of the axis of a wafer processing table that moves up and down, and that moves up and down with a shaft that is integrated with the wafer processing table by an elevating cylinder, lifts the wafer that is directly above the wafer processing table onto the temporary mounting table. After the wafers are placed, the retractable wafer general wire conveyors separate from each other and open, the wafer processing table rises, and the plasma reaction processing chamber is sealed; (3) the step of performing plasma processing on the wafers to be processed; (4) After lowering the plasma treatment table,
The retractable wafer transfer wire conveyor closes and returns to its original position, the temporary wafer mounting table descends and returns to its original position, and the process of transferring plasma-treated processed wafers from the temporary wafer holding table to the wafer transport mechanism is automatically controlled. Automatic single-wafer processing type plasma reaction processing equipment that performs plasma reaction processing on wafers to be processed in conjunction with each other. 2. The opening/closing means of the opening/closing type wafer transfer wire conveyor includes an elevating cylinder, a support stand, an opening/closing arm, a wafer transfer wire conveyor arm, a motor,
2. The automatic single wafer processing type plasma reaction processing apparatus according to claim 1, wherein the opening/closing type wafer transfer wire conveyor is opened and closed in a fan shape in conjunction with the lifting and lowering of the lifting cylinder, which is comprised of a clutch. 3 The opening/closing means of the open/close type wafer transfer wire conveyor is a wafer transfer wire conveyor slide shaft, a wafer transfer wire conveyor arm,
2. The automatic single wafer processing type plasma reaction processing apparatus according to claim 1, wherein an open/close type wafer transfer wire conveyor comprising a clutch and an arm opening/closing cylinder is opened and closed in the front and rear horizontal directions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8567782A JPS5840828A (en) | 1982-05-22 | 1982-05-22 | Automatic sheet fed type plasma reaction treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8567782A JPS5840828A (en) | 1982-05-22 | 1982-05-22 | Automatic sheet fed type plasma reaction treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5840828A JPS5840828A (en) | 1983-03-09 |
| JPH0219969B2 true JPH0219969B2 (en) | 1990-05-07 |
Family
ID=13865459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8567782A Granted JPS5840828A (en) | 1982-05-22 | 1982-05-22 | Automatic sheet fed type plasma reaction treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840828A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0616488B2 (en) * | 1985-12-02 | 1994-03-02 | 東芝機械株式会社 | Semiconductor manufacturing equipment |
| JP2544145Y2 (en) * | 1988-03-31 | 1997-08-13 | 株式会社南雲製作所 | Automatic PCB chamfering device |
| JP3297831B2 (en) * | 1994-12-29 | 2002-07-02 | ソニー株式会社 | Transfer device |
| JP6379017B2 (en) * | 2014-11-20 | 2018-08-22 | 東京技研工業株式会社 | Spacing adjuster for wire conveyor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421174A (en) * | 1977-07-18 | 1979-02-17 | Tokyo Ouka Kougiyou Kk | Plasma reaction processor |
| JPS5457867A (en) * | 1977-10-17 | 1979-05-10 | Nichiden Varian Kk | Vacuum processor with automatic wafer feeder |
-
1982
- 1982-05-22 JP JP8567782A patent/JPS5840828A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421174A (en) * | 1977-07-18 | 1979-02-17 | Tokyo Ouka Kougiyou Kk | Plasma reaction processor |
| JPS5457867A (en) * | 1977-10-17 | 1979-05-10 | Nichiden Varian Kk | Vacuum processor with automatic wafer feeder |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5840828A (en) | 1983-03-09 |
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