JPS5860552A - Vertical-type automatic plasma processing device - Google Patents
Vertical-type automatic plasma processing deviceInfo
- Publication number
- JPS5860552A JPS5860552A JP15928181A JP15928181A JPS5860552A JP S5860552 A JPS5860552 A JP S5860552A JP 15928181 A JP15928181 A JP 15928181A JP 15928181 A JP15928181 A JP 15928181A JP S5860552 A JPS5860552 A JP S5860552A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chamber
- wafers
- plasma
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はLSI或いは超LSI等の大集積回路を形成し
たチップの製造に出いる半導体ウニ/・−のエツチング
、クリーニング或いはウエノ・−表面のホトレジスト層
のアッシング(灰化剥離)等に用いるプラズマ処理装置
のうち、特にプラズマ発生用チャンバーを縦方向に設置
した縦型自動プラズマ処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention is applicable to the etching and cleaning of semiconductor urchins used in the manufacture of chips forming large integrated circuits such as LSIs and ultra-LSIs, or to the ashing (ashing) of photoresist layers on the surface of wafers. Among plasma processing apparatuses used for peeling, etc., the present invention particularly relates to a vertical automatic plasma processing apparatus in which a plasma generation chamber is installed vertically.
一般にLSI等の大集積回路を形成したチップを製造す
るには、半導体ウェハーに微細パターンを形成したレジ
スト膜を介して、絶縁膜、半導体膜又は金属膜をエツチ
ングする工程、上記膜をクリーニングする工程及びエツ
チングに使用したレジスト膜をウェハー表面から除去す
るアッシング工程を必要としている。Generally, in order to manufacture a chip with a large integrated circuit such as an LSI, there is a step of etching an insulating film, a semiconductor film, or a metal film through a resist film formed with a fine pattern on a semiconductor wafer, and a step of cleaning the film. Additionally, an ashing step is required to remove the resist film used for etching from the wafer surface.
そして従来にあっては、上記各工程を、無機酸、有機溶
剤等の種々の液体化学薬品を用いた湿式処理によって行
なってきたが、湿式処理による場合には廃液処理の問題
の他に、加工精度が低いという問題がある。特に最近で
は超LSIの開発に伴ないパターンはますます微細化す
る傾向にあり、このような超LSIを製造するにあたっ
て従来の湿式処理を施すことはできなくなってきている
。Conventionally, each of the above steps has been carried out by wet processing using various liquid chemicals such as inorganic acids and organic solvents. There is a problem with low accuracy. Particularly in recent years, with the development of VLSIs, patterns have become increasingly finer, and it has become impossible to use conventional wet processing to manufacture such VLSIs.
このだめ現在では加工精度の高いプラズマを用いた乾式
処理に移行しつつあり、この乾式処理を行なうプラズマ
処理装置も種々提案されるに至っ゛ている。For this reason, there is now a shift to dry processing using plasma, which has high processing accuracy, and various plasma processing apparatuses for performing this dry processing have been proposed.
しかしながら多くのプラズマ処理装置は単にプラズマ発
生用チャンバーを備えだものに過ぎず、該チャンバー内
へのウェハーの出し入れは専ら手作業によって行なって
いる。However, many plasma processing apparatuses are simply equipped with a chamber for plasma generation, and wafers are moved in and out of the chamber exclusively by hand.
例えば、未処理ウェハー収納カセットからウェハーを1
枚毎取り出し石英まだはアルミニウム製のウェハー治具
にビンセッ″トにより移し替えを行なっている。このた
めウェハーの欠け、割れ、保持不良による落下まだは汚
染等により生産歩留りが非常に低く、さらに近年の如く
ウェハー径も4インチから5インチそして6インチと大
型化するにつれ上記した欠点は増大する。そしてさらに
プラズマ処理中は高温度となるため、処理後の取り出し
を手作業で行なうことは避けなければならず作業能率は
極めて低い。For example, remove one wafer from an unprocessed wafer storage cassette.
Each wafer is taken out and transferred to a wafer jig made of quartz or aluminum using a bin set.As a result, production yields are extremely low due to wafer chips, cracks, falling wafers due to poor holding, and contamination. As the wafer diameter increases from 4 inches to 5 inches to 6 inches, the above-mentioned drawbacks increase.Furthermore, the temperature becomes high during plasma processing, so manual removal after processing must be avoided. As a matter of fact, work efficiency is extremely low.
斯る不利を解消する自動プラズマ処理装置として、特開
昭53−90870号に示される装置があるが、この装
置は極めて構造が複雑であるとともに、プラズマ発生用
チャンバーを横向きに設置している。このため装置自体
の占有面積が大きくなり、コンパクト化を図ることがで
きない。As an automatic plasma processing apparatus that overcomes this disadvantage, there is an apparatus disclosed in Japanese Patent Laid-Open No. 53-90870, but this apparatus has an extremely complicated structure and the plasma generation chamber is installed horizontally. For this reason, the area occupied by the device itself becomes large, making it impossible to make it more compact.
本発明者等は上述の如き従来の技術的課題に鑑み、これ
を有効に解決すべく本発明を成したものであり、その目
的とする処は、簡単な構造により多数枚のウェハーを連
続して自動的に処理でき、且つコンパクト化を達成し得
る縦型自動プラズマ処理装置を提供するにある。In view of the above-mentioned conventional technical problems, the present inventors have created the present invention to effectively solve the problems. An object of the present invention is to provide a vertical automatic plasma processing apparatus that can perform automatic processing and can be made compact.
斯る目的を達成すべく本発明は装置本体内にプラズマ発
生用チャンバーを縦方向に配置するとともに、多数枚の
ウェハーを保持し得るウェハー保持体を上記プラズマ発
生用チャンバー内に挿抜自在となるように支持する一方
、第1の搬送部材によってウェハー収納カセットからウ
エハーヲ一枚毎取り出して送り出すとともに、1枚毎取
り出し、ウェハー保持体方向に移動可能とされた第2の
搬送部材に送り出し、続いて第2の搬送部材によって上
記ウェハー保持体内に送り込むようにした装置であって
、第1の搬送部材先端部は第2の搬送基端部近傍に位置
したことをその要旨としている。In order to achieve such an object, the present invention arranges a plasma generation chamber vertically within an apparatus main body, and a wafer holder capable of holding a large number of wafers can be freely inserted into and removed from the plasma generation chamber. At the same time, the first conveying member takes out each wafer from the wafer storage cassette and sends them out, and at the same time, the first conveying member takes out each wafer and sends them out to the second conveying member which is movable in the direction of the wafer holder. The gist of this apparatus is that the wafer is fed into the wafer holder by two conveying members, and the tip end of the first conveying member is located near the base end of the second conveying member.
以下に本発明の好適一実施例を添付図面に基いて詳述す
る。A preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
第1図は本発明に係る縦型自動プラズマ装置の全体斜視
図であり、図中1は略々ボックス状をした装置本体であ
る。この装置本体1内には石英からなる円筒状のプラズ
マ発生用チャンバー2を縦方向即ちチャンバー2の軸が
上下方向となるように配設し、このチャンバー2の上端
部を閉塞し下端部を開口することで、該開口から半導体
ウェハー3をチャンバー2内に装填及び取り出すように
している。また上記チャンバー2の外周部には電極板が
固定されており1本体1内に設けた高周波電源4によっ
て高周波を印加するようにしている。FIG. 1 is an overall perspective view of a vertical automatic plasma apparatus according to the present invention, and numeral 1 in the figure is a roughly box-shaped apparatus main body. Inside this device body 1, a cylindrical plasma generation chamber 2 made of quartz is arranged vertically, that is, with the axis of the chamber 2 in the vertical direction.The upper end of the chamber 2 is closed and the lower end is open. By doing so, the semiconductor wafer 3 is loaded into and taken out from the chamber 2 through the opening. Further, an electrode plate is fixed to the outer periphery of the chamber 2, and a high frequency is applied by a high frequency power source 4 provided within the main body 1.
また本体1の前面下半部には張出し部5を付設し、この
張出し部5の上面6に各種操作ボタン7・・・を取り付
けるとともに、上面6の左右の端部には半導体ウェハー
3・・・を25枚収納し得る収納カセット8,8を設け
ている。この収納カセット8はアルミ或いはテフロンな
どからなる2枚の板体8a+8aを対向し上端部を棒材
8b、8bで接続してなり、第2図に示すように一方の
板体8aの下端をアングル状の支持部材9に載置し、支
持部材9の昇降動につれて収納カセット8が上記上面6
に形成した孔1oを介して、張出し部5内へ下降動し、
また張出し部5から上方へ持ち上がるようになっている
。In addition, an overhang 5 is attached to the lower front half of the main body 1, various operation buttons 7 are attached to the upper surface 6 of the overhang 5, and semiconductor wafers 3 are attached to the left and right ends of the upper surface 6. There are storage cassettes 8, 8 that can store 25 sheets of . This storage cassette 8 is made up of two plates 8a+8a made of aluminum or Teflon, which face each other and whose upper ends are connected by rods 8b, 8b.As shown in FIG. 2, the lower end of one plate 8a is angled. The storage cassette 8 is placed on a supporting member 9 having a shape of
moves downward into the overhanging portion 5 through the hole 1o formed in the
Moreover, it is adapted to be lifted upward from the overhanging portion 5.
そして収納カセット8を構成する板体8aの内面には、
第3図に示す如く水平方向に一定間隔で突条11・・・
を設け、この突条11・・・にょって形成される肩部に
ウェハー3の端部が係止するようになっている。And on the inner surface of the plate body 8a that constitutes the storage cassette 8,
As shown in Fig. 3, the protrusions 11 are arranged at regular intervals in the horizontal direction.
are provided, and the end of the wafer 3 is secured to the shoulder formed by the protrusions 11.
まだ上記張出し部の上面6の中央には左右方向に伸びる
開口12を形成し、この開口12内に一対の第1の搬送
部材13.13を配設している。An opening 12 extending in the left-right direction is formed in the center of the upper surface 6 of the overhang, and a pair of first conveying members 13, 13 are disposed within this opening 12.
即ち搬送部材13は無端ベルトによって構成され、その
基端部13aは上記収納カセット8の下部に位置し、夫
々の搬送部材13.13の先端部13b。That is, the conveying member 13 is constituted by an endless belt, the base end 13a of which is located below the storage cassette 8, and the distal end 13b of each conveying member 13.13.
13bは上面6の中央部において離間して対向している
。また搬送部材13である無端ベルトの上面は張出し部
の上面6よりも若干上方へ突出し、収納カセット8が下
降した際に最下段のつ゛エノ・−3が無端ベルト上に載
るようにしている。13b are spaced apart from each other and face each other at the center of the upper surface 6. Further, the upper surface of the endless belt, which is the conveying member 13, protrudes slightly above the upper surface 6 of the overhanging portion, so that when the storage cassette 8 is lowered, the lowermost cassette 3 rests on the endless belt.
また上記張出し部の上面6には上記開口12と連続し後
方へ伸びる開口14を形成し、この開口14内に基端部
が上記搬送部材13.13の光漏部13b、13b間に
位置し、先端部が前記本体1の前面に形成した開口15
から本体1内に入った第2の搬送部材16を設けている
。Further, an opening 14 is formed in the upper surface 6 of the overhanging portion and extends rearward and is continuous with the opening 12, and the proximal end portion is located within this opening 14 between the light leakage portions 13b, 13b of the conveying member 13.13. , an opening 15 whose tip portion is formed in the front surface of the main body 1
A second conveying member 16 is provided which enters into the main body 1 from above.
この第2の搬送部材16は昇降部材17とアーム部材1
8とからなり、昇降部材17は略々板状をなし、その基
端部は第2図及び第4図に示す如く、第1の搬送部材1
3.13の先端部のプーリ19.19を支持するチャン
ネル状の支持ブロック20内に位置し、その下面を該支
持ブロック20の下方に配設したシリンダユニット21
のロッド22ニ固着し、シリンダユニット21の作動に
より昇降動せしめられるとともに、ロッド22が引き込
まれた状態にあっては昇降部材17の上面は第1の搬送
部材13の上面よりも若干低く位置するようになってい
る。そして昇降部材17の基端部には窓部23が穿設さ
れており、この窓部23にローラ24を嵌着し、第1の
搬送部材13上を移送されてきたウェハー3が昇降部材
17上に容易に乗り移れるようにしている。This second conveying member 16 includes a lifting member 17 and an arm member 1.
8, the elevating member 17 is approximately plate-shaped, and its base end is connected to the first conveying member 1 as shown in FIGS. 2 and 4.
Cylinder unit 21 located within a channel-shaped support block 20 that supports the pulley 19.
is fixed to the rod 22 and is moved up and down by the operation of the cylinder unit 21, and when the rod 22 is retracted, the top surface of the lifting member 17 is located slightly lower than the top surface of the first conveying member 13. It looks like this. A window 23 is bored at the base end of the elevating member 17, and a roller 24 is fitted into this window 23, so that the wafer 3 transferred on the first conveying member 13 is transferred to the elevating member 17. This allows for easy transfer to the top.
また昇降部材17の両側部には無端ベルト25゜25を
取り付け、ウエノ・−3を昇降部材17の上面に沿って
移送するようにしている。Further, endless belts 25.degree. 25 are attached to both sides of the elevating member 17, so that Ueno-3 is transported along the upper surface of the elevating member 17.
そして上記無端ベル1−25.25の外側に近接してア
ーム部材18.18が設けられている。アーム部材18
は第2図に示す如く矩形状の基端部18aの上端部から
棒状部18bを延出し、且つ基端部18aの下端に取り
付けたキャスター26によってガイドレール27上を移
動可能とされている。An arm member 18.18 is provided adjacent to the outside of the endless bell 1-25.25. Arm member 18
As shown in FIG. 2, a rod-shaped portion 18b extends from the upper end of the rectangular base end 18a, and is movable on a guide rail 27 by casters 26 attached to the lower end of the base end 18a.
まだ第2図に示す如く、本体1の底面には2本のガイド
棒28,28を立設し、このガイド棒28゜=28に前
記プラズマ発生用チャンバ″−2の蓋体29を摺動自在
に挿着している。そして蓋体29に雄ネジ部を形成しだ
ロッド30を螺合挿通し、このロッド30の下端部に嵌
着した歯車31と本体1の底面に固設しだモータ32の
歯車33とを噛合せしめ、モータ32の駆動により蓋体
29がガイド棒28,2Bに沿って昇降動するようにし
ている。As shown in FIG. 2, two guide rods 28, 28 are set up on the bottom surface of the main body 1, and the lid 29 of the plasma generation chamber ''-2 is slid onto these guide rods 28°=28. A male threaded portion is formed on the lid body 29, a rod 30 is screwed through the rod 30, and the gear 31 fitted to the lower end of the rod 30 is fixedly attached to the bottom surface of the main body 1. A gear 33 of a motor 32 is engaged with the cover body 29 so that the lid body 29 moves up and down along the guide rods 28 and 2B by driving the motor 32.
更に上記蓋体29の上面にはウェハー保持体34を立設
している。このウェハー保持体34は4本のpツ)”3
4a、34b、34c、34dと、これらロッドの上端
部を結合する部材34eとからなり、ロッド34a及び
34bは平面からみて台形の底辺の両端に位置し、ロッ
ド34c及び34dは台形の上辺の両端に位置する形状
をしている。Furthermore, a wafer holder 34 is provided upright on the upper surface of the lid 29. This wafer holder 34 has four points)"3
4a, 34b, 34c, and 34d, and a member 34e that connects the upper ends of these rods, the rods 34a and 34b are located at both ends of the bottom side of the trapezoid when viewed from the plane, and the rods 34c and 34d are located at both ends of the upper side of the trapezoid. It has a shape that is located at .
そして夫々ノ07 )”34 a 、 34bl 34
c、 34dの内側部には上下方向に亘って等間隔でウ
エノ1−3の端部が嵌り込む溝部35・・・を本実施例
にあっては50本穿設している。而して、上記アーム部
材18.18の先端部間に載置されだウエノ・−3が、
アーム部材18.18の移動によってウェハー保持体3
4内に送り込まれ、上7配溝部35・・・にその端部が
係止することで、ウエノ・−保持体34ニヨツてウェハ
ー3が保持されるようになっている。And each No.07)”34 a, 34bl 34
In this embodiment, 50 grooves 35, into which the end portions of the utensils 1-3 fit, are formed at equal intervals in the vertical direction on the inner side of the grooves 34d and 34d. Thus, the Ueno-3 placed between the tips of the arm members 18 and 18 is
The wafer holder 3 is moved by the movement of the arm member 18.18.
The wafer 3 is held by the wafer holder 34 by being fed into the wafer 4 and having its end portion locked in the upper groove 35 .
以上の如き構成からなる縦型自動プラズマ装置の作用を
以下に述べる。The operation of the vertical automatic plasma apparatus constructed as described above will be described below.
先ず25枚のウェハー3・・・を収納した左側のカセッ
ト8を若干降下せしめると、カセット8に収納されてい
るウェハー3・・・のうち最下段に位置するものが、第
1の搬送部材13上に載り1次いで搬送部材13によっ
て送り出′盪れる。そして搬送部材13の先端部13b
まで搬送されてきたウェハー3は第2の搬送部材16の
一部を構成する昇降部材17上に乗り移る。すると、リ
ミットスイッチによってシリンダユニット21が作動し
、昇降部材17が若干上昇し、これと同時に無端ベルト
25.25が駆動しウェハー3を昇降部材17の先端部
まで搬送する。First, when the left cassette 8 containing 25 wafers 3 is lowered slightly, the lowest one of the wafers 3 stored in the cassette 8 is transferred to the first transport member 13. It is placed on top and then sent out by the conveying member 13. And the tip portion 13b of the conveying member 13
The wafer 3 that has been transported up to this point is transferred onto the elevating member 17 that constitutes a part of the second transport member 16. Then, the cylinder unit 21 is actuated by the limit switch, and the elevating member 17 is slightly raised, and at the same time, the endless belts 25 and 25 are driven to convey the wafer 3 to the tip of the elevating member 17.
そしてウェハー3が昇降部材の先端部までくるとりミツ
トスイッチによシ無端ベルト25.25の駆動が停止し
、次いで昇降部材17がもとの位置まで若干降下する。Then, when the wafer 3 reaches the tip of the lifting member, the driving of the endless belt 25, 25 is stopped by the Mitswitch, and then the lifting member 17 is slightly lowered to its original position.
するとウェハー3はアーム部材18.18の先端部に乗
り移り、更にアーム部材18.18がウェハー保持体3
4に向って移動する。その結果ウエノ・−3はウエノ・
−保持体34内に送り込まれ、保持体のロッド34a+
34b。Then, the wafer 3 is transferred to the tip of the arm member 18.18, and the arm member 18.18 is further transferred to the wafer holder 3.
Move towards 4. As a result, Ueno-3 is Ueno-3.
- the rod 34a+ of the holder is fed into the holder 34;
34b.
34c、34dに形成した溝部35・・・にその両部が
係止する。この場合ウエノ・−保持体34は最も下方に
位置しているので、ウエノ・−3はウェハー保持体34
の最上段に保持されることとなる。Both parts are engaged with grooves 35 formed in 34c and 34d. In this case, Ueno-3 is located at the lowest position in the wafer holder 34.
It will be held at the top of the page.
次いでモータ32の駆動によりウエノ・−保持体34が
一段分、即ち溝部35・・・の−間隔分だけ上昇し、ア
ーム部材18.18の先端部からウエノ・−3が離れ、
またアーム部材はもとの位置まで移動し、装置は最初の
状態となる。Next, by driving the motor 32, the Ueno-holding body 34 is raised by one step, that is, the distance between the grooves 35..., and the Ueno-3 is separated from the tip of the arm member 18.18.
The arm member also moves back to its original position, and the device returns to its initial state.
この後、左側のカセット8が史に一段分降下して2枚目
のウェハーを送り出−し、とのウエノ為−を前記同様の
作用によってウエノ・−保持体34の2段目の溝部に保
持せしめる。この゛ようにして順次ウェハー3・・・を
ウエノ・−保持体34内に送り込み、左側のカセット内
のウエノ1−を全、て保持体34に収納したならば、今
度は右側のカセット8のウェハーを同様にしてウェハー
保持体34内に保持せしめ、最終的に50枚のウェハー
を保持体34に送り込む。After this, the left cassette 8 descends one stage to send out the second wafer, and the wafer is placed in the second groove of the wafer holder 34 by the same action as described above. hold it. In this way, the wafers 3... are sequentially fed into the wafer holder 34, and once all the wafers 1- in the left cassette are stored in the holder 34, it is time to move the wafers 3... into the wafer holder 34. The wafers are held in the wafer holder 34 in the same manner, and finally 50 wafers are fed into the holder 34.
−そして更にモータ32を駆動せしめて蓋体29を上昇
し、プラズマ発生用チャンバー2の下端開口部を閉塞し
、内部を密閉状態とした後、真空ポンプによりチャンバ
ー2内を真空状態としプラズマを発生せしめ、エツチン
グ、クリーニング或いはアッシング処理を行なう。-Then, the motor 32 is further driven to raise the lid 29, closing the lower end opening of the plasma generation chamber 2 and sealing the inside, and then evacuating the chamber 2 with a vacuum pump to generate plasma. Perform embossment, etching, cleaning or ashing treatment.
そして所定時間プラズマ処理を施したならば、モータ3
2を駆動せしめウェハー保持体34内の最下段のウェハ
ー3が、アーム部材18.18の上端部よりも若干高い
位置にくるまで、保持体34を降下せしめる。次いでア
ーム部材18.18を保持体34方向に移動せしめてア
ーム部材の先端部が最下段のウェハーの直下に位置する
ようにする。そして更にモータ32を駆動せしめること
で保持体を降下せしめ、アーム部材上にウエノ・−を載
せ、前記と逆の動作によりウニノ・−をカセット8内に
収納する。以後同様の作用によりプラズマ処理を終了す
る。After plasma treatment has been performed for a predetermined period of time, the motor 3
2 to lower the wafer holder 34 until the lowest wafer 3 in the wafer holder 34 is at a position slightly higher than the upper end of the arm member 18.18. The arm member 18.18 is then moved toward the holder 34 so that the tip of the arm member is positioned directly below the wafer at the bottom. Then, by further driving the motor 32, the holder is lowered, the Ueno-- is placed on the arm member, and the Uno-- is housed in the cassette 8 by the reverse operation. Thereafter, the plasma treatment is completed by the same action.
尚、以上は本発明の単なる一実施例に過ぎず、本発明は
上記のものに限られない。例えば、図示例においては第
2の搬送部材16を昇降部材17とアーム部材18の2
つの部材によって構成しだが、昇降動作とウェハー保持
体方向への移動動作の両方を行なう1つの部材によって
第2の搬送部材を構成することもできる。Note that the above is just one embodiment of the present invention, and the present invention is not limited to the above. For example, in the illustrated example, the second conveying member 16 is connected to the lifting member 17 and the arm member 18.
However, the second conveyance member can also be constituted by a single member that performs both the lifting and lowering operations and the moving operation toward the wafer holder.
まだ第1の搬送部材として無端ベルトを示したが、これ
に限らず、スイング動作によってウェハーを送り出すよ
うにしてもよく、更に昇降手段としてシリンダを用いず
にモータとロッドとを組合せるようにしてもよい。Although an endless belt is shown as the first conveying member, the present invention is not limited to this, and the wafers may be sent out by a swing motion, and furthermore, a motor and a rod may be combined as the lifting means instead of using a cylinder. Good too.
以上の説明で明らか々如<、本1発明によれば。As is clear from the above description, according to the present invention.
多数枚のウェハーを保持し得るウエノ・−保持体を、装
置本体内に縦方向に配置したプラズマ発生用チャンバー
に対し挿抜自在に設ける一方、装置本体に多数枚のウェ
ハーを収納し得るカセットを装着し、このカセットに収
納されたウエノ・−を取シ出して搬送する第1の搬送部
材を装置本体に設け、更に上記第1の搬送部材の先端部
近傍に基端部が位置し且つ上記ウェハー保持体方向へ移
動可能とされた第2の搬送部材によりウェハーをウェハ
ー保持体内に送り込むようにしだので、手作業によらず
確実にウェハーをチャンバー内に装填することができ、
作業効率の大巾な向上が図れ、且つ作業中にウェハーを
破損する虞れがなく、製品歩留りを向上せしめることが
できる。A wafer holder capable of holding a large number of wafers is provided so that it can be inserted into and removed from a plasma generation chamber arranged vertically within the main body of the apparatus, while a cassette capable of storing a large number of wafers is attached to the main body of the apparatus. A first conveying member for taking out and conveying the wafer stored in the cassette is provided in the main body of the apparatus, and further, the base end is located near the distal end of the first conveying member and the wafer is Since the wafer is fed into the wafer holder by the second transport member that is movable toward the holder, the wafer can be reliably loaded into the chamber without manual work.
Work efficiency can be greatly improved, there is no risk of damaging the wafer during work, and product yield can be improved.
そして本発明の機構は極めて簡単であり、且つf ヤ7
バー td縦型であるので、装置全体のコンパクト化
を達成し得る等多大な効果を奏す゛る。The mechanism of the present invention is extremely simple, and
Since the bar is vertical, it has great effects such as making the entire device more compact.
図面は本発明の好適一実施例を示すものであり、第1図
は本発明に係る縦型自動プラズマ処理装置の全体斜視図
、第2図は同装置の内部機構を示す斜視図、第3図はウ
ェハー収納カセットの一部ヲ示す側面図、第4図はウェ
ハーの搬送機構の要部を示す正面図である。
尚、図面中1は装置本体、2はプラズマ発生用チャンバ
ー、3はウェハー、8はウェハー収納カセット、13は
第1の搬送部材、16は第2の搬送部材、34はウェハ
ー保持体である。
特 許 出 願人 東京電子化学株式会社代理人 弁理
士 下 1)容一部
面 弁理士 大 橋 邦 音間 弁理士
小 山 有The drawings show a preferred embodiment of the present invention, and FIG. 1 is an overall perspective view of a vertical automatic plasma processing apparatus according to the present invention, FIG. 2 is a perspective view showing the internal mechanism of the apparatus, and FIG. This figure is a side view showing a part of the wafer storage cassette, and FIG. 4 is a front view showing the main part of the wafer transport mechanism. In the drawings, 1 is a main body of the apparatus, 2 is a plasma generation chamber, 3 is a wafer, 8 is a wafer storage cassette, 13 is a first transport member, 16 is a second transport member, and 34 is a wafer holder. Patent Applicant Tokyo Denshi Kagaku Co., Ltd. Agent Patent Attorney 2 1) Part 1 Patent Attorney Kuni Ohashi Onma Patent Attorney Yu Koyama
Claims (1)
バーと、多数枚のウェハーを保持し°得るとともに上記
チャンバー内に挿抜自在とされたウェハー保持体と、ウ
ェハー収納カセットからウェハーを一枚毎取り出して送
り出す第1の搬送部材と、この第1の搬送部材によって
送り出されたウェハーを上記ウェハー保持体内に送り込
むべく、第1の搬送部材の先端部近傍に基端部が位置し
、且つ上記ウェハー保持体方向へ移動可能とされた第2
の搬送部材とからなる縦型自動プラズマ処理装置。A plasma generation chamber arranged vertically inside the main body of the apparatus, a wafer holder that can hold a large number of wafers and can be inserted into and removed from the chamber, and a wafer storage cassette that holds each wafer one by one. A first conveyance member that takes out and sends out the wafer, and a proximal end portion of the first conveyance member that is located near the distal end portion of the first conveyance member to feed the wafer sent out by the first conveyance member into the wafer holder; The second part is movable toward the holding body.
A vertical automatic plasma processing device consisting of a conveying member.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15928181A JPS5860552A (en) | 1981-10-05 | 1981-10-05 | Vertical-type automatic plasma processing device |
US06/424,503 US4550239A (en) | 1981-10-05 | 1982-09-27 | Automatic plasma processing device and heat treatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15928181A JPS5860552A (en) | 1981-10-05 | 1981-10-05 | Vertical-type automatic plasma processing device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62125192A Division JPS63260047A (en) | 1987-05-22 | 1987-05-22 | Wafer holder |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5860552A true JPS5860552A (en) | 1983-04-11 |
JPS6325500B2 JPS6325500B2 (en) | 1988-05-25 |
Family
ID=15690362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15928181A Granted JPS5860552A (en) | 1981-10-05 | 1981-10-05 | Vertical-type automatic plasma processing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5860552A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60258459A (en) * | 1984-06-04 | 1985-12-20 | Deisuko Saiyaa Japan:Kk | Transferring apparatus of wafer for vertical type heat-treating furnace |
JPS63260047A (en) * | 1987-05-22 | 1988-10-27 | Tokyo Ohka Kogyo Co Ltd | Wafer holder |
JPH0195730U (en) * | 1987-12-18 | 1989-06-26 | ||
JPH0268923A (en) * | 1988-09-02 | 1990-03-08 | Tel Sagami Ltd | Vertical heat treatment device |
US4954684A (en) * | 1988-02-26 | 1990-09-04 | Tel Sagami Limited | Vertical type heat-treating apparatus and heat-treating method |
US4976613A (en) * | 1987-09-29 | 1990-12-11 | Tel Sagani Limited | Heat treatment apparatus |
JPH02146426U (en) * | 1989-05-17 | 1990-12-12 | ||
JPH0327049U (en) * | 1989-07-25 | 1991-03-19 | ||
US5083896A (en) * | 1988-09-16 | 1992-01-28 | Tokyo Ohka Kogyo Co., Ltd. | Object handling device |
US5822498A (en) * | 1995-06-22 | 1998-10-13 | Tokyo Electron Limited | Teaching method for loading arm for objects to be processed |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107678A (en) * | 1973-02-05 | 1974-10-12 | ||
JPS50126175A (en) * | 1974-03-22 | 1975-10-03 | ||
JPS513743U (en) * | 1974-06-25 | 1976-01-12 | ||
JPS5342575U (en) * | 1976-12-16 | 1978-04-12 | ||
JPS5691417A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Heating treatment device for wafer |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5342575B2 (en) * | 1973-12-10 | 1978-11-13 |
-
1981
- 1981-10-05 JP JP15928181A patent/JPS5860552A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107678A (en) * | 1973-02-05 | 1974-10-12 | ||
JPS50126175A (en) * | 1974-03-22 | 1975-10-03 | ||
JPS513743U (en) * | 1974-06-25 | 1976-01-12 | ||
JPS5342575U (en) * | 1976-12-16 | 1978-04-12 | ||
JPS5691417A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Heating treatment device for wafer |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0586066B2 (en) * | 1984-06-04 | 1993-12-09 | Disco Abrasive Systems Ltd | |
JPS60258459A (en) * | 1984-06-04 | 1985-12-20 | Deisuko Saiyaa Japan:Kk | Transferring apparatus of wafer for vertical type heat-treating furnace |
JPH0359581B2 (en) * | 1987-05-22 | 1991-09-11 | Tokyo Ohka Kogyo Co Ltd | |
JPS63260047A (en) * | 1987-05-22 | 1988-10-27 | Tokyo Ohka Kogyo Co Ltd | Wafer holder |
US4976613A (en) * | 1987-09-29 | 1990-12-11 | Tel Sagani Limited | Heat treatment apparatus |
JPH0195730U (en) * | 1987-12-18 | 1989-06-26 | ||
US4954684A (en) * | 1988-02-26 | 1990-09-04 | Tel Sagami Limited | Vertical type heat-treating apparatus and heat-treating method |
JPH0268923A (en) * | 1988-09-02 | 1990-03-08 | Tel Sagami Ltd | Vertical heat treatment device |
US5083896A (en) * | 1988-09-16 | 1992-01-28 | Tokyo Ohka Kogyo Co., Ltd. | Object handling device |
US5584647A (en) * | 1988-09-16 | 1996-12-17 | Tokyo Ohka Kogyo Co., Ltd. | Object handling devices |
JPH02146426U (en) * | 1989-05-17 | 1990-12-12 | ||
JPH0327049U (en) * | 1989-07-25 | 1991-03-19 | ||
US5822498A (en) * | 1995-06-22 | 1998-10-13 | Tokyo Electron Limited | Teaching method for loading arm for objects to be processed |
Also Published As
Publication number | Publication date |
---|---|
JPS6325500B2 (en) | 1988-05-25 |
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