JPH054282Y2 - - Google Patents
Info
- Publication number
- JPH054282Y2 JPH054282Y2 JP1984184188U JP18418884U JPH054282Y2 JP H054282 Y2 JPH054282 Y2 JP H054282Y2 JP 1984184188 U JP1984184188 U JP 1984184188U JP 18418884 U JP18418884 U JP 18418884U JP H054282 Y2 JPH054282 Y2 JP H054282Y2
- Authority
- JP
- Japan
- Prior art keywords
- plate
- processing chamber
- mounting table
- chuck ring
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000002093 peripheral effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 29
- 238000004891 communication Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は半導体ウエハーなどの板状処理物を処
理チヤンバー内において、載置台上に固定したま
まプラズマ処理、アツシング処理或いは拡散等の
各種加熱処理する際に用いるチヤツキング装置に
関する。[Detailed description of the invention] (Industrial application field) This invention applies various heat treatments such as plasma processing, ashing processing, and diffusion to plate-shaped processing objects such as semiconductor wafers in a processing chamber while fixed on a mounting table. This invention relates to a chucking device used when
（従来の技術）
LSI、超LSIを製造するには、半導体ウエハー
を処理チヤンバー内に収納し、処理チヤンバー内
を真空引きした後、処理チヤンバー内に所定の反
応ガスを導入し、プラズマエツチング、拡散、ク
リーニング或いはCVD（Chemical Vapor
Deposition）処理等を繰り返し行うようにしてい
る。(Conventional technology) To manufacture LSI and VLSI, a semiconductor wafer is housed in a processing chamber, the inside of the processing chamber is evacuated, a predetermined reaction gas is introduced into the processing chamber, and plasma etching and diffusion are performed. , cleaning or CVD (Chemical Vapor)
Deposition) processing etc. are repeated.
そして、上記各処理を行う方式として、多数枚
の半導体ウエハーを同時に処理するバツチ式と半
導体ウエハーを一枚毎処理する枚葉処理式とがあ
る。枚葉処理式にあつてはバツチ式に比べ処理の
均一化を図ることができるが、一枚毎処理チヤン
バーの載置台上に載せて行う必要がある。 As methods for carrying out each of the above-mentioned processes, there are a batch method in which a large number of semiconductor wafers are processed simultaneously and a single wafer processing method in which semiconductor wafers are processed one by one. In the single wafer processing type, processing can be made more uniform than in the batch type, but it is necessary to place each wafer on a mounting table in the processing chamber.
（考案が解決しようとする問題点）
枚葉処理式の装置によつて半導体ウエハーを一
枚毎処理するには、載置台上の定められた位置に
半導体ウエハーを確実に固定した状態で行うこと
が均一処理をなす上で必要である。(Problem to be solved by the invention) In order to process semiconductor wafers one by one using a single-wafer processing device, the semiconductor wafer must be securely fixed at a predetermined position on the mounting table. is necessary for uniform processing.
そのためには、載置台との間で半導体ウエハー
を保持するチヤツキング載置が必要となるが、処
理チヤンバー内にチヤツキング装置を駆動するシ
リンダユニツト等の駆動部材を設けることは、半
導体ウエハーが汚染することとなり、且つ処理チ
ヤンバー自体の容積も大きくしなければならず、
また処理チヤンバー外に駆動部材を設ける場合に
は、処理チヤンバー内は真空に近い状態まで吸引
されるため如何にして処理チヤンバー内外の遮断
状態を維持するかが問題となる。 To do this, a chucking device is required to hold the semiconductor wafer between it and the mounting table, but providing a driving member such as a cylinder unit that drives the chucking device inside the processing chamber may cause the semiconductor wafer to become contaminated. In addition, the volume of the processing chamber itself must be increased.
Further, when a driving member is provided outside the processing chamber, the inside of the processing chamber is suctioned to a state close to a vacuum, so there is a problem of how to maintain a state of isolation between the inside and outside of the processing chamber.
（問題点を解決するための手段）
上記問題点を解決すべく本考案は、処理チヤン
バーの外部にシリンダユニツト等の昇降装置を配
し、この昇降装置によつて昇降動せしめられるロ
ツドを処理チヤンバーの底板を貫通してその先端
部にチヤツクリングを取り付け、このチヤツクリ
ングと処理チヤンバー内に設けた載置台との間に
半導体ウエハー等の板状被処理物を保持するよう
にした。(Means for Solving the Problems) In order to solve the above problems, the present invention provides an elevating device such as a cylinder unit outside the processing chamber, and a rod that is moved up and down by this elevating device is moved into the processing chamber. A chuck ring was attached to the tip of the chuck ring through the bottom plate of the chuck ring, and a plate-shaped object to be processed, such as a semiconductor wafer, was held between the chuck ring and a mounting table provided in the processing chamber.
（実施例）
以下に本考案の実施例を添付図面に基づいて説
明する。(Example) An example of the present invention will be described below based on the accompanying drawings.
第１図は本考案に係るチヤツキング装置を適用
したプラズマ処理装置の全体斜視図であり、ボツ
クス状をなす処理装置の本体１内には合成石英か
らなる処理チヤンバー２を配し、この処理チヤン
バー２と外部とをシヤツターを備えた連通部３に
て連通・遮断するようにしている。 FIG. 1 is an overall perspective view of a plasma processing apparatus to which a chucking apparatus according to the present invention is applied. A communication section 3 equipped with a shutter connects and disconnects the communication and the outside from each other.
前記処理チヤンバー２は第２図に示すように有
底筒状をなし、上部を蓋板４にて塞いで内部を気
密とし、側面には連通部３に開口する孔５が穿設
され、この孔５を介して被処理物である半導体ウ
エハーが処理チヤンバー２内に出入りする。ま
た、孔５と反対側の側面にも孔６を穿設し、この
孔６を介して処理チヤンバー２内の空気を真空引
き装置７にて吸引するようにしている。 As shown in FIG. 2, the processing chamber 2 has a cylindrical shape with a bottom, and its upper part is closed with a lid plate 4 to make the inside airtight. A semiconductor wafer, which is an object to be processed, enters and exits the processing chamber 2 through the hole 5 . Further, a hole 6 is also formed on the side opposite to the hole 5, and the air inside the processing chamber 2 is sucked through the hole 6 by a vacuum suction device 7.
また、前記蓋板４にはシール部材８を介して軸
９を回転自在に挿通し、処理チヤンバー２内に臨
む軸９下端に、平板状の上部電極１０を取り付
け、更に軸９の周囲に反応ガスの供給パイプ１１
を処理チヤンバー２内に臨む如く貫通せしめてい
る。 Further, a shaft 9 is rotatably inserted into the lid plate 4 via a sealing member 8, and a flat upper electrode 10 is attached to the lower end of the shaft 9 facing into the processing chamber 2. Gas supply pipe 11
is passed through so as to face the inside of the processing chamber 2.
一方、処理チヤンバー２内には下部電極をなす
載置台１２が設けられている。この載置台１２の
上面は周縁部が一段凹んだ段部１３で中央部が突
出部１４となつており、突出部１４及び段部１３
の２箇所には第３図及び第４図に示す如くロツド
１５，１６，１７が貫通し、これらロツド１５，
１６，１７は処理チヤンバー２の底板２ａを貫通
して下方に伸び、本体１内に設けた支持板１８上
に固着されたシリンダユニツト１９，２０，２１
のロツドと結着するか、シリンダユニツト１９，
２０，２１のロツド自体となつている。そして、
ロツド１５，１６，１７が貫通する部分の底板２
ａ下面には蛇腹部２２…を設け、これら蛇腹部２
２…内を前記ロツド１５，１６，１７が通るよう
にし、ロツド１５，１６，１７の外周部を蛇腹部
２２…の端にて気密に保持するようにしている。 On the other hand, a mounting table 12 serving as a lower electrode is provided inside the processing chamber 2. The upper surface of this mounting table 12 has a stepped portion 13 that is recessed one step at the periphery and a protruding portion 14 at the center.
As shown in FIGS. 3 and 4, rods 15, 16, and 17 penetrate through these two locations.
Cylinder units 19, 20, 21 extend downward through the bottom plate 2a of the processing chamber 2 and are fixed on a support plate 18 provided inside the main body 1.
or connect it to the rod of the cylinder unit 19,
20 and 21 rods themselves. and,
Bottom plate 2 where rods 15, 16, 17 pass through
A bellows portions 22 are provided on the lower surface, and these bellows portions 2
The rods 15, 16, 17 pass through the insides of the bellows parts 22, and the outer peripheries of the rods 15, 16, 17 are held airtight at the ends of the bellows parts 22.
また、載置台１２の突出部１４中央を貫通する
ロツド１５の先端部には押し上げ板２３を固着
し、突出部１４上面にはこの押し上げ板２３が入
り込む凹部１４ａを形成している。一方、段部１
３を貫通するロツド１６，１７の先端部にはチヤ
ツクリング２４を固着している。このチヤツクリ
ング２４には内方に向つて突出する爪２４ａ…を
設けている。 Further, a push-up plate 23 is fixed to the tip of a rod 15 passing through the center of the protrusion 14 of the mounting table 12, and a recess 14a into which the push-up plate 23 fits is formed on the upper surface of the protrusion 14. On the other hand, step part 1
A chuck ring 24 is fixed to the tip of the rods 16 and 17 that pass through the rods 3. This chuck ring 24 is provided with claws 24a that project inward.
ここで、シリンダユニツト１９はシリンダユニ
ツト２０，２１とは独立して作動し、したがつて
ロツド１５はロツド１６，１７とは別個に昇降動
をなす。 Here, the cylinder unit 19 operates independently of the cylinder units 20 and 21, so that the rod 15 moves up and down independently of the rods 16 and 17.
ところで装置本体１の一部には第１図に示す如
く膨出部１ａを設け、この膨出部１ａ上面に半導
体ウエハーＷを上下方向に段状に収納するカセツ
ト２５，２６を左右に離間して配置している。こ
れらカセツト２５，２６は一段づつ昇降動可能と
され、カセツト２５，２６間には半導体ウエハー
Ｗの出し入れ装置２７を配置している。この出し
入れ装置２７は半導体ウエハーＷを搬送するベル
トコンベア２８と、半導体ウエハーＷの載置トレ
イ２９とからなり、図示しないシリンダユニツト
等により全体が前後方向に移動する。この載置ト
レイ２９には径方向のスリツト２９ａとこのスリ
ツト２９ａにつながる中央の孔２９ｂが形成さ
れ、スリツト２９ａは前記ロツド１５よりも幅広
で、孔２９ｂは前記押し上げ板２３よりも大径と
している。そして、連通部３のシヤツター３０
（第２図参照）を開けた状態で出し入れ装置２７
を前後に移動せしめることで、出し入れ装置２７
の載置トレイ２９上に載置した半導体ウエハーＷ
は処理チヤンバー２内に搬入され、また処理が済
んだ半導体ウエハーＷが処理チヤンバー２外に搬
出される。 By the way, as shown in FIG. 1, a part of the apparatus main body 1 is provided with a bulging part 1a, and cassettes 25 and 26 for storing semiconductor wafers W in steps in the vertical direction are spaced apart from side to side on the upper surface of this bulging part 1a. It is arranged as follows. These cassettes 25 and 26 can be moved up and down one stage at a time, and a device 27 for loading and unloading semiconductor wafers W is disposed between the cassettes 25 and 26. This loading/unloading device 27 is composed of a belt conveyor 28 for conveying the semiconductor wafer W and a mounting tray 29 for the semiconductor wafer W, and the whole is moved in the front and back direction by a cylinder unit (not shown) or the like. This mounting tray 29 has a radial slit 29a and a central hole 29b connected to the slit 29a, the slit 29a being wider than the rod 15, and the hole 29b having a larger diameter than the pushing plate 23. . And the shutter 30 of the communication part 3
(See Figure 2)
By moving back and forth, the loading/unloading device 27
The semiconductor wafer W placed on the mounting tray 29 of
is carried into the processing chamber 2, and the processed semiconductor wafer W is carried out of the processing chamber 2.
以上の如き構成からなるプラズマ処理装置の作
用を以下に述べる。 The operation of the plasma processing apparatus having the above configuration will be described below.
先ず、カセツト２５内に収納される半導体ウエ
ハーＷ…のうち、最下段に位置するものを図示し
ないコンベアベルトによつて出し入れ装置２７の
コンベアベルト２８上に移し、コンベアベルト２
８によつて半導体ウエハーＷを載置トレイ２９上
まで送る。次いで出し入れ装置２７全体を前進せ
しめるとともに、連通部３のシヤツター３０を開
き、載置トレイ２９を連通部３を介して処理チヤ
ンバー２内へ進入せしめる。 First, among the semiconductor wafers W stored in the cassette 25, the lowest one is transferred onto the conveyor belt 28 of the loading/unloading device 27 by a conveyor belt (not shown).
8, the semiconductor wafer W is sent onto the mounting tray 29. Next, the entire loading/unloading device 27 is moved forward, and the shutter 30 of the communication section 3 is opened to allow the loading tray 29 to enter the processing chamber 2 through the communication section 3.
そして上記の操作と併行して、第５図に示す如
く、シリンダユニツト２０，２１を作動し、ロツ
ド１６，１７を上昇せしめてチヤツクリング２４
を載置台１２上面よりも上方に位置せしめる。 Then, in parallel with the above operation, as shown in FIG.
is positioned above the upper surface of the mounting table 12.
この後、第６図に示す如く、シリンダユニツト
１９を作動せしめ、ロツド１５及び押し上げ板２
３を上昇させる。すると、押し上げ板２３は載置
トレイ２９の孔２９ｂよりも小径であるため、押
し上げ板２３は孔２９ｂを通過して上昇し、これ
に伴い載置トレイ２９上から半導体ウエハーＷを
取り上げる。尚、第５図及び第６図において、載
置トレイ２９は紙面垂直方向に移動するものとす
る。 After this, as shown in FIG. 6, the cylinder unit 19 is operated, and the rod 15 and the push-up plate 2 are
Raise 3. Then, since the push-up plate 23 has a smaller diameter than the hole 29b of the mounting tray 29, the push-up plate 23 passes through the hole 29b and rises, thereby picking up the semiconductor wafer W from above the mounting tray 29. In FIGS. 5 and 6, it is assumed that the loading tray 29 moves in a direction perpendicular to the plane of the paper.
そして、第６図に示す状態から載置トレイ２９
を紙面垂直方向へ移動させ、載置トレイ２９を載
置台１２上方から後退させる。尚、この場合載置
トレイ２９のスリツト２９ａの幅はロツド１５径
よりも大となつているため、載置トレイ２９の後
退動とロツド１５とが干渉することはない。 Then, from the state shown in FIG.
is moved in a direction perpendicular to the plane of the paper, and the mounting tray 29 is retreated from above the mounting table 12. In this case, since the width of the slit 29a of the loading tray 29 is larger than the diameter of the rod 15, the backward movement of the loading tray 29 and the rod 15 do not interfere with each other.
この後、第７図に示すように、シリンダユニツ
ト１９，２０，２１を作動させ、ロツド１５，１
６，１７を降下せしめ、下部電極としての載置台
１２上面とチヤツクリング２４の爪２４ａとの間
で半導体ウエハーＷを保持する。この場合、載置
トレイ２９は出し入れ装置２７の後退により連通
部３を通つて外部まで後退しており、シヤツター
３０は閉じられている。 After that, as shown in FIG. 7, the cylinder units 19, 20, 21 are operated, and the rods 15,
6 and 17 are lowered, and the semiconductor wafer W is held between the upper surface of the mounting table 12 serving as a lower electrode and the claw 24a of the chuck ring 24. In this case, the loading tray 29 has retreated to the outside through the communication section 3 due to the retreat of the loading/unloading device 27, and the shutter 30 is closed.
この後、真空引き装置７を駆動して処理チヤン
バー２内を真空するとともに反応ガス供給パイプ
１１を介して処理チヤンバー２内にC2F6又はCF4
などの反応ガスを供給し、上部電極１０と下部電
極である載置台１２間に高周波電圧を印加し、プ
ラズマを発生させ、半導体ウエハーＷ表面にマス
クのパターンに応じてエツチングを施す。 After that, the evacuation device 7 is driven to evacuate the processing chamber 2, and C 2 F 6 or CF 4 is introduced into the processing chamber 2 via the reaction gas supply pipe 11.
A high frequency voltage is applied between the upper electrode 10 and the mounting table 12, which is the lower electrode, to generate plasma, and the surface of the semiconductor wafer W is etched according to the pattern of the mask.
そして、所定時間エツチングを施したならば、
N2等の不活性ガスを導入して大気圧に戻し、再
びシリンダユニツト１９，２０，２１を作動して
載置台１２上から半導体ウエハーＷを持ち上げる
とともに、連通部３を介して出し入れ装置２７の
載置トレイ２９を載置台１２上方に臨ませ、第６
図の状態として、更にシリンダユニツト１９を作
動させ、半導体ウエハーＷを第５図に示す如く載
置トレイ２９上に移し、出し入れ装置２７を後退
させ、処理済みの半導体ウエハーＷを処理チヤン
バー２から外部へ取り出す。 Then, after etching for a predetermined period of time,
Inert gas such as N 2 is introduced to return the pressure to atmospheric pressure, and the cylinder units 19 , 20 , 21 are operated again to lift the semiconductor wafer W from the mounting table 12 . The mounting tray 29 is placed above the mounting table 12, and the sixth
In the state shown in the figure, the cylinder unit 19 is further operated, the semiconductor wafer W is transferred onto the mounting tray 29 as shown in FIG. Take it out.
この後、コンベアベルト２８を介して半導体ウ
エハーＷを載置トレイ２９から後方へ移動させ、
更に図示しないコンベアベルトを介して、処理済
みの半導体ウエハーＷを他方のカセツト２６内に
収める。 Thereafter, the semiconductor wafer W is moved backward from the mounting tray 29 via the conveyor belt 28,
Further, the processed semiconductor wafer W is placed into the other cassette 26 via a conveyor belt (not shown).
斯る操作を繰り返すことで、カセツト２５内の
半導体ウエハーＷ…を順次処理し、処理の済んだ
半導体ウエハーＷを順次カセツト２６内に収め、
これが終了したならばカセツト２６ごと次の工程
へ送る。 By repeating such operations, the semiconductor wafers W in the cassette 25 are sequentially processed, and the processed semiconductor wafers W are sequentially placed in the cassette 26.
When this is completed, the entire cassette 26 is sent to the next process.
尚、実施例にあつてはプラズマ処理装置として
本考案に係るチヤツキング装置を適用した例を示
したが、本考案に係るチヤツキング装置はプラズ
マ処理装置に限らず、真空装置が接続する各種加
熱処理装置にも適用し得る。 In the examples, an example was shown in which the chucking device according to the present invention was applied as a plasma processing device, but the chucking device according to the present invention is not limited to a plasma processing device, but can be applied to various heat treatment devices to which a vacuum device is connected. It can also be applied to
（考案の効果）
以上に説明した如く本考案によれば、チヤツキ
ング装置によつて半導体ウエハー等の板状被処理
物を処理チヤンバー内の載置台上に固定した状態
で、各種処理を行うため、処理中に被処理が動い
たりせず且つ常に同一位置に固定でき、しかもウ
エハー全面を載置台上面に密着せしめることがで
き、この載置台上面は温度コントロールが容易で
あるため処理を均等に施すことができ、また、チ
ヤツキング装置の作動せしめるシリンダユニツト
等の昇降装置を処理チヤンバー外に配したため、
被処理物が汚染することなく、更に昇降装置によ
つてチヤツクリングを昇降せしめるロツドの処理
チヤンバーの貫通部には蛇腹部を設けたため、処
理チヤンバーの気密性を保持しつつチヤツキング
装置を確実に作動せしめることができる。(Effects of the Invention) As explained above, according to the present invention, various processes are performed while a plate-shaped workpiece such as a semiconductor wafer is fixed on a mounting table in a processing chamber by a chucking device. The object to be processed does not move during processing and can always be fixed in the same position, and the entire surface of the wafer can be brought into close contact with the top surface of the mounting table. The temperature of the top surface of this mounting table can be easily controlled, so that processing can be performed evenly. In addition, since the lifting device such as the cylinder unit that operates the chucking device is placed outside the processing chamber,
The chuck ring is raised and lowered by the elevating device without contaminating the workpiece, and since a bellows part is provided in the penetrating part of the processing chamber of the rod, the chucking device can be operated reliably while maintaining the airtightness of the processing chamber. be able to.
第１図は本考案に係るチヤツキング装置を適用
したプラズマ処理装置の全体斜視図、第２図は処
理チヤンバーの縦断面図、第３図は載置台の斜視
図、第４図は載置台の拡大断面図、第５図乃至第
７図は本考案に係るチヤツキング装置の作用を説
明する断面図である。
尚、図面中１はプラズマ処理装置本体、２は処
理チヤンバー、７は真空引き装置、１０は上部電
極、１２は載置台、１３は段部、１４は突出部、
１５，１６，１７はロツド、１９，２０，２１は
シリンダユニツト、２２は蛇腹部、２９は載置ト
レイ、Ｗは半導体ウエハーである。
Fig. 1 is an overall perspective view of a plasma processing apparatus to which a chucking device according to the present invention is applied, Fig. 2 is a longitudinal sectional view of a processing chamber, Fig. 3 is a perspective view of a mounting table, and Fig. 4 is an enlarged view of the mounting table. 5 to 7 are cross-sectional views for explaining the operation of the chucking device according to the present invention. In the drawing, 1 is the main body of the plasma processing apparatus, 2 is the processing chamber, 7 is the vacuum evacuation device, 10 is the upper electrode, 12 is the mounting table, 13 is the stepped portion, 14 is the protruding portion,
15, 16, 17 are rods, 19, 20, 21 are cylinder units, 22 is a bellows, 29 is a mounting tray, and W is a semiconductor wafer.
Claims (1)
板状被処理物の載置台、押し上げ板及びチヤツ
クリングを設け、押し上げ板及びチヤツクリン
グについては処理チヤンバー外に配置した昇降
装置から処理チヤンバー内に伸びるロツドに結
着せしめることで各々独立して載置台に対し昇
降動を行うようにし、押し上げ板の上昇で載置
台から板状被処理物を持ち上げ、チヤツクリン
グの下降で載置台とチヤツクリングとの間で板
状被処理物の周縁部を保持するようにしたこと
を特徴とする板状被処理物のチヤツキング装
置。 (2) 前記載置台の上面には板状被処理物と略同径
の突出部が形成され、この突出部外周に下降し
たチヤツクリングが嵌合することを特徴とする
請求項(1)に記載の板状被処理物のチヤツキング
装置。[Scope of Claim for Utility Model Registration] (1) A platform for placing a plate-shaped object to be processed, a push-up plate, and a chuck ring are provided in a processing chamber connected to a vacuum evacuation device, and the push-up plate and chuck ring are placed outside the processing chamber for lifting and lowering. By tying them to rods extending from the device into the processing chamber, they can each independently move up and down relative to the mounting table, and when the push-up plate rises, the plate-shaped object to be processed is lifted from the mounting table, and when the chuck ring descends, it is placed. A chucking device for a plate-shaped workpiece, characterized in that a peripheral edge of the plate-like workpiece is held between a mounting table and a chuck ring. (2) According to claim (1), a protrusion having approximately the same diameter as the plate-shaped object is formed on the upper surface of the mounting table, and a lowered chuck ring is fitted to the outer periphery of the protrusion. A chucking device for plate-shaped objects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984184188U JPH054282Y2 (en) | 1984-12-04 | 1984-12-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984184188U JPH054282Y2 (en) | 1984-12-04 | 1984-12-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6197841U JPS6197841U (en) | 1986-06-23 |
| JPH054282Y2 true JPH054282Y2 (en) | 1993-02-02 |
Family
ID=30741673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984184188U Expired - Lifetime JPH054282Y2 (en) | 1984-12-04 | 1984-12-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH054282Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2058132T3 (en) * | 1986-12-19 | 1994-11-01 | Applied Materials Inc | REACTOR FOR PLASMA ATTACK INTENSIFIED BY A MAGNETIC FIELD. |
| JP2673538B2 (en) * | 1988-05-02 | 1997-11-05 | 東京エレクトロン株式会社 | Etching apparatus and etching method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5741064A (en) * | 1980-08-25 | 1982-03-06 | Nec Corp | Digital board trunk |
| JPS58178533A (en) * | 1982-04-14 | 1983-10-19 | Hitachi Ltd | Wafer push-up device |
-
1984
- 1984-12-04 JP JP1984184188U patent/JPH054282Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5741064A (en) * | 1980-08-25 | 1982-03-06 | Nec Corp | Digital board trunk |
| JPS58178533A (en) * | 1982-04-14 | 1983-10-19 | Hitachi Ltd | Wafer push-up device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6197841U (en) | 1986-06-23 |
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