JPH0616488B2 - Semiconductor manufacturing equipment - Google Patents

Description

TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus. More specifically, the present invention relates to an apparatus for automatically performing process control such as semiconductor vapor phase growth according to a preset program.

[Background technology and its problems]

In recent years, a so-called vapor phase growth apparatus for performing vapor phase growth on a semiconductor wafer has been attracting attention together with a tendency that semiconductor chips are frequently used in various industrial fields.

In the conventional vapor phase growth apparatus, as the process in the reaction furnace progresses, information such as the type of gas to be used, its flow rate and the temperature in the reaction furnace is input from the pinboard to execute a series of sequences. Therefore, there is a drawback in that the burden on the operator is large and the reliability and workability are lacking.

In order to solve this drawback, the present applicant has previously filed Japanese Patent Application No. 57-
No. 11997 was proposed. This is to prepare multiple process programs that set information such as the type of gas and its flow rate, time and heating conditions for each sequence process,
In executing a certain sequence, the process program is read, the process program is modified as necessary, and the process can be executed in accordance with the modified program. As a result, the reliability and workability of the conventional pinboard system can be significantly improved.

By the way, in the case of process control such as vapor phase growth, information such as the type of gas, its flow rate, time, and heating conditions can be set in advance for each sequence process. It is often the case that each patch is operated under different conditions in each patch or a plurality of devices (or a device equipped with a plurality of reaction furnaces).

In the conventional operation, the operator reads out the process program to be executed next from the process program group for each batch and displays it on a display device such as a CRT to confirm and correct the condition contents, and then to start switch each time. However, the burden on the operator has been a serious problem.

Since the work of loading and unloading a semiconductor substrate such as silicon also causes the generation of rubber, automatic loading and unloading devices for substrates are being adopted. However, since the driving data may change, it is not efficient and it cannot be said that it is suitable for actual production if the data is checked each time.

[Object of the Invention]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor manufacturing apparatus that solves the above-mentioned conventional drawbacks and reduces the burden on the operator while achieving full automation.

[Means and Actions for Solving Problems]

Therefore, in the present invention, the process program of the process program group and the drive program of the drive program group are
It is intended to reduce the burden on the operator and achieve full automation by designating the order in which the processes are to be executed and having a function of, for example, reserving the execution order of the processes for one day.

Specifically, a reaction furnace for semiconductor substrates, heating means for heating a substrate in the reaction furnace, gas supply means for supplying a gas necessary for a reaction in the reaction furnace, and a substrate for the reaction furnace. A substrate transfer means for carrying in and unloading the substrate from the reaction furnace, and a control device for controlling the heating means, the gas supply means and the substrate transfer means are provided, and the control device executes processing in the reaction furnace. A first memory area for storing a process program consisting of a series of process program units including information relating to the time, the used gas, the flow rate thereof, the temperature in the furnace, and the like, and a drive program for driving the substrate transfer means. An arbitrary program is read out from the second memory area to be stored and at least one of the first and second memory areas, and this program is modified and input. Modifying means for modifying the program accordingly, a third memory area for storing the modified program, a reservation means for designating the execution order of the arbitrary programs in the first, second and third memory areas, and this reservation Means for executing a program designated by the means in a designated order.

〔Example〕

FIG. 1 shows a semiconductor vapor phase growth apparatus of this example.
The apparatus includes an apparatus main body 1 having two reactors R1 and R2, a heating unit 2 for heating a wafer W as a semiconductor substrate housed in each of the reactors R1 and R2 of the apparatus main body 1, and each reaction. Gas supply means 3 for supplying a gas required for reaction into the devices R1 and R2, loading of the wafer W into the respective reaction devices R1 and R2 provided in the device body 1, and wafers W from the respective reaction devices R1 and R2. And a controller 5 for controlling the heating unit 2, the gas supply unit 3, and the substrate transport unit 4.

FIG. 2 shows the plane of the device body 1. In the figure, the reactors R1 and R2 are disposed on the left and right sides, and the substrate transfer means 4 is disposed at an intermediate position between them. Each reactor R1 and R2 has a reaction furnace 11
And a lid opening / closing device 12 that opens the ceiling lid 50 of the reaction furnace 11 upward when the wafer W is loaded and unloaded by the substrate transfer means 4. The structure of each reactor 11 is
This will be described with reference to FIG. 3 described later. The lid opening / closing device 12 is a well-known device, and can be configured by, for example, a mechanism that moves up and down while holding the ceiling lid 50.

The substrate transfer means 4 has a swivel arm 2 whose base end is provided at a central position of the apparatus main body 1 so as to be vertically movable and swivelable, and has a suction part or the like for adsorbing the wafer W at a front end.
1 between the two reactors R1 and R2 and the swing arm 21.
Of the two load tables 22 and 23 arranged on the locus through which the tip of the wafer passes, the cassettes 24 and 25 arranged corresponding to the load tables 22 and 23, and the wafer W stored in the one cassette 24. A conveyor plate 26 for picking up and placing it on the load table 22, and a swing arm 21.
And a transfer plate 27 for accommodating the wafer W unloaded from any one of the reaction furnaces 11 and placed on the load table 23 in the cassette 25.

FIG. 3 shows a cross section of each of the reaction furnaces 11. In the figure, a gas inlet 32 for vapor phase growth in the furnace is provided below the center of the bottom plate 31. The gas introduced into the inlet 32 rises in the pipe line 34 extending upward from the center of the bottom plate 31, and is discharged from the fumarole 33 at the top to the reactor 11.
Is discharged inside. The gas supply unit 16 is connected to the inlet 32 through the tube furnace 15 (see FIG. 1).
The gas supply unit 16 is responsive to a command from the controller 5 to supply gases required for the reaction in each reaction furnace 11, such as N ₂ , H ₂ , HCl, DN, DP, SiCl _4, and a mixture thereof. It supplies gas at a specified flow rate, and is constituted by a valve switching device, for example. In the present embodiment, the gas supply unit 3 is constituted by the gas supply unit 16 and the pipe lines 15 and 34 connecting the gas supply unit 16 and the inside of each reaction furnace 11.
Is configured.

A rotating member 36 that supports the susceptor 35 at its top is arranged on the outer peripheral portion of the conduit 34. The member 36 is rotated by a motor 37 with a speed reducer.
An induction heating coil 39 is arranged below the susceptor 35 with a cover 38 therebetween. In the coil 39,
Water is made to flow inside to prevent the heat generated by the high frequency current from damaging the coil itself. An insulating plate 40 also functions as a weight support for the coil 39, and is fixed above the bottom plate 31 by bolts 41. Reference numerals 42 and 43 denote connection joint portions with the outside of the induction heating coil 39. The high frequency generator 13 is connected to the joint portions 42 and 43 (see FIG. 1). The high frequency generator 13 controls the power supply to the coil 39 by turning on and off the power and adjusting the power based on the command from the controller 5. In the present embodiment, the high-frequency generator 16 and the induction heating coil 39 constitute the heating means 2.

The ceiling lid 50 facing the bottom plate 31 is composed of three layers, and the quartz layer 44 and the first stainless steel layer 4 are arranged from the inside, respectively.
5 and the second stainless layer 46. Each layer 44,
There is a gap between 45 and 46. 48 is a clamp member,
When the clamp device 49 such as an air cylinder is excited, the brim 47 of the ceiling lid 50 is pressed downward. An observation window 52 for observing the susceptor 35 and the wafer W on the susceptor 35 is attached to the ceiling lid 50, and the temperatures of the wafer W and the susceptor 35 are detected by the light entering through the quartz layer 44. Sensor TS to be
A temperature detection window 53 to which is attached is provided.

FIG. 4 shows the internal structure of the control device 5. In the figure, a central processing unit (CPU) 61 of the main computer
A data bus 62 and an i / O bus 63 are connected to each. The data bus 62 has a temporary storage unit (R
AM) 64, display device (CRT) 77, display data storage unit (CR) for temporarily storing contents to be displayed.
A T RAM) 65, a program storage unit (ROM) 66 that stores various program groups, and a program storage unit (ROM) 67 that stores a processing program for operating the present system are respectively connected. The temporary storage unit (RAM) 64 is data used during operation of the system, for example, input data from the keyboard 78, ON / OFF information of various switches, or a process given from an external storage medium such as a cassette tape. It is used for storing programs, etc.

In the program storage unit (ROM) 66, a plurality of types of process programs each consisting of a series of process program executed in the reactor 11 of each of the reactors R1 and R2, that is, a plurality of types of process programs (process program group). A first memory area 66 for storing in advance
₁ and a ₂ second memory area 66 for storing the various driving programs for driving the substrate transfer means 4 (driving programs) are provided. First memory area 6
The one process program examples in ₆₁ processes programs stored, in FIG. 5, the number 1 to 17 which represents the process program unit in the leftmost column corresponding to each sequence process is shown, that In the right TiME column, the duration of the sequence is shown numerically in units of minutes and seconds. Further, on the right side of the TiME column, there is a GAS FLOW column in which the flow rate of the gas used in the sequence is entered. On the right side of the GAS FLOW column, a temperature setting column for specifying the temperature θ ° C in the reaction furnace 11 is provided.

As the processing program stored in the storage unit 67,
A process program for reading out designated process program units from the process programs stored in the ROM 66 in sequence, and controlling the CPU 61 so that the CPU 61 decodes them into sequence instructions corresponding to each program, that is, a program processing program (PROCESS
C), a modification processing program (MODiFY) for controlling the CPU 61 to modify the contents of the process program stored in the RAM 64, a program for inputting necessary data using the keyboard 78 and generating a new process program A generation processing program (PROCESS), a RUN processing program for displaying the processing currently in progress on the CRT 77, an arbitrary process program unit PP (i) in the program, and another process program unit PP
Processing program (STEP) for converting to (j), ROM 66
Process programs in the program group stored in the external storage medium (eg, cassette magnetic tape CMT9) as a third memory area via the RAMs 64 and 96.
8) Processing program (STORE) for transferring to STORE
Processing program (STORT) that performs the opposite action of the function, R
A confirmation processing program (VERiFY) for checking the process program stored in the OM66 etc. before applying it to the processing program PROCESS C, and the execution order of the process programs in the program group stored in the ROM66 etc. Reserved program to specify (RESER
VE), a processing program (DiAGNOSiS) that performs self-diagnosis during operation of this system, a processing program (USED TIME) that calculates the process elapsed time to service the elapsed time during operation of one program, and various test functions It is a processing program (TEST) that can be executed. 1 of these
When one program is designated, the CPU 61 performs necessary arithmetic functions according to the respective processing programs.

Further, the i / O bus 63 is provided with a CRT interface 68 for giving data to be displayed on the CRT 77, a keyboard 7
In addition to the input module 69 that takes in the input data signal from 8 into the temporary storage unit (RAM) 64, the six output modules 70 to 75 and the high-speed memory data transfer unit 76 are connected. The output module 70 is provided with the high frequency generator 13 of the heating means 2, the output module 71 is provided with the gas supply unit 16 of the gas supply means 3, and the output module 7 is provided.
The drive units of the substrate transfer unit 4 are connected to the respective units 2. Further, the output module 73 is connected to the susceptor rotation motor 37 of each reactor 11 via the driver 81, the output module 74 is connected to the drive unit of the lid opening / closing device 12, and the output module 75 is connected to the clamp device 49. ing.

The high-speed memory data transfer section 76 is connected to another high-speed memory data transfer section 92 connected to a sub central processing unit (CPU) 93 via a data highway 91. The CPU 93 has a program storage unit (ROM) 95 and a temporary storage unit (RAM) via a data bus 94.
96 is connected, and the high-speed memory data transfer unit 92 and the interface 99 of the cassette magnetic tape (CMT) 98 are connected via the i / O bus 97. The CPU 93 reads various program groups recorded in the CMT 98 through the interface 99 according to the processing program stored in the ROM 95.
Transfer to AM96 or R to CMT98
Write the contents of AM96. On the other hand, the contents of the RAM 96 are transferred to the RAM 64 or vice versa.
When transferring to 96, the high-speed memory data transfer unit 7
6, 92 and data highway 91. By doing so, reading of program data from the CMT 98 (or magnetic card, etc.) and CMT
The time required to write the same data to 98 is the CPU 61
It is possible to avoid the problem of limiting the speed of the arithmetic processing of.

Next, the operation of this embodiment will be described.

Previously, the first in the memory region 66 ₁ standard process program group in ROM66 is, the ₂ second memory area 66 driving programs are stored.

Now, when the power is turned on, some mark such as a $ mark is displayed on the CRT 77. Hereinafter, it will be explained that the $ mark is displayed when the data on the CRT 77 is cleared and the page is changed.

Therefore, an arbitrary process program is read out from the process program group, and confirmation, correction, and reservation are performed. First, on the keyboard 78, a read operation for confirming the process program (for example, "V""E""CR"
Key input), and then specify the reactor (for example,
When the reactor R1 is designated, "R", "1", and "CR" are keyed in, and then the process program name is finally input (for example, "N" and "CR" are keyed in).
61 reads the process program corresponding to the process program name from the first memory area 66 ₁ and displays it on the CRT 77. Display example 6 at this time
Shown in the figure. This is a standard sequence for N-type vapor phase growth. The columns of N ₂ , H ₂ , HCl, etc. show the gas flow rate, T shows the execution time of the sequence, and TEMP shows the temperature in the sequence. ing. Also, those enclosed by a circle indicate key inputs.

Here, at CHECK OK (* Y, N) =, “Y” “C”
If you input "R", that is, without correction, RESERVE OK in the next step
The message goes to (* Y, N). If you make a reservation, select "Y" and "CR". If you do not make a reservation, select "N".
Enter "CR" respectively. If you enter "Y" or "CR", you will proceed to the RESERVE No = message in the next step.
Enter the number of the order you want to execute (eg "0""3"
Key in "CR"). Then, the process program including the reservation number is transferred to the high-speed memory data transfer unit 7
6, 92 and the data highway 91 to be stored on the cassette magnetic tape 98. That is, the third reservation is made.

On the other hand, in the above CHECK OK (* Y, N), if "N" and "CR" are input, that is, if there is a correction, the message "$ MoDiFY REACTOR = R1 PROCESS NAME = N SEQUENCE NO =" will be sent due to a page break. , Input the SEQUENCE No. to be corrected (for example, key in "1" and "CR"). Then, SEQUENCE NAME = N ₂ PURGE is displayed, and the data in each column is displayed. Correct the data in the column you want to correct. For example, T (M) = 005 → “CR” T (S) = 00 → “3” “0” “CR” N ₂ = 151 → “CR” is corrected. Finally, enter "E" or "CR" for the SEQUENCE No = message and any number for the PROCESS NAME = message (for example, "1""2").
After inputting "3", "4", "CR", CHECK OK
When "Y" and "CR" are entered in response to the (* Y, N) = message, the data (corrected data) shown in FIG. 7 is displayed. In FIG. 7, CHECK OK (* Y, N) =
Message, RESERVE OK (* Y, N) message,
The key operation for the RESERVE No = message is the same as in FIG. The corrected process program is recorded on the cassette magnetic tape 98 in the same manner and arbitrarily corrected in the same manner.

Next, an arbitrary drive program is read out from the drive program group, and confirmation, correction and reservation are performed. First, a read operation for confirming the driving program (for example, key input of “A”, “L”, and “CR”) is performed on the keyboard 78, and subsequently, designation of a reactor (eg, designation of the reactor R1 is performed by “ After doing "R""1""CR" key input,
Finally, enter the drive program name (for example, "S""T"
When the key "6" is input), the CPU 61 reads the drive program corresponding to the drive program name from the _second memory area 662 and displays it on the CRT 77. A display example at this time is shown in FIG.

Here, in CHECK OK (* Y, N), "Y""C
If you enter "R", that is, without correction, RESERVE of the next stage
The message goes to (* Y, N). If you make a reservation, select "Y" and "CR". If you do not make a reservation, select "N".
Enter "CR" respectively. If you enter "Y" or "CR", you will proceed to the RESERVE No message in the next step, so enter the number of the order you want to execute (for example, "0", "5", "C").
Key). Then, the drive program including the reservation number is transferred to the cassette magnetic tape 9 through the high-speed memory data transfer units 76 and 92 and the data highway 91.
8 is stored. That is, the fifth reservation is made.

On the other hand, in the CHECK OK (* Y, N), "N"
If you enter "R", that is, if there is a correction, the message "$ AUTO LOADER MoDiFY REACTER = R1 WAF No =" will be displayed due to a page break, so enter the WAF No to be corrected (for example, "0""1""CR Key input). Then, each column of WAF No 01 will be displayed. Correct the data in the column you want to correct. For example, Axis P → “P” “CR” PULSE = 350 → “3” “4” “0” “CR” Axis R → “CR” Axis Z → “Z” “CR” PULSE = 45 → “4” “ Modify as 0 ”and“ CR ”. Next, after keying in "0", "2" and "CR" for the WAF No = message, Axis P → "CR" Axis R → "R""CR" PULSE = 580 → "5"" Corrected as “7” “0” “CR” Axis Z → “CR”. Finally, enter "E" and "CR" for the WAF No = message and "Y" and "CR" for the CHECK OK (* Y, N) message. (Corrected data) is displayed. In Fig. 9, CHECK OK (* Y, N) message, MEMORY
(* Y, N) message, SUSCEPTER message,
The key operation for the RESERVE (* Y, N) message and the RESERVE No message is the same as in FIG. The corrected drive program is recorded on the cassette magnetic tape 98 in the same manner and arbitrarily corrected in the same manner.

On the other hand, in addition to this method, in order to make continuous reservations without confirming the contents of the program first, as shown in FIG. 10, after keying in "R" and "E", the reactor is designated. , The process program name, the carry-in / carry-out identification code, and the drive program name are input in the order in which they are to be executed, these programs are sequentially recorded in the cassette magnetic tape 98.
Will be stored in. In the figure, PROCESS NAME 0
000 shows an input example in the case of sleep.

Here, in order to confirm the program stored in the cassette magnetic tape 98, CHECK OK (*
When the user inputs "Y" and "CR" for the message (Y, N), a list as shown in FIG. 11 is displayed. In addition, as shown in FIGS. 6 to 8, for those reserved individually for confirmation of each program, after the page break, "R""V""C
When the key "R" is entered, a list as shown in FIG. 11 is displayed.

Now, in order to execute the process program and the drive program recorded on the cassette magnetic tape 98, when the start switch is pressed on the keyboard 78, the CPU 6
1 reads the program of the cassette magnetic tape 98 and executes the program in the reserved order. That is, the high frequency generator 13, the gas supply unit 16, the substrate transfer means 4, the motor 37, the lid opening / closing device 12, the clamp device 49 and the like are controlled according to the program.

For example, in executing the reservation program shown in FIG. 11, first, the clamp device 49 on the reaction device R1 side is released, the lid opening / closing device 12 is operated, and the ceiling lid 50 is opened.
The motor 37 is driven to rotate the susceptor 35, and the substrate storage pocket on the susceptor 35 is aligned with the rotating position of the rotating arm 21. Here, the wafer W placed on the load table 22 in order to perform the orientation flat alignment after being rotated on the swing arm 21 and the load table 22 and then lowered, and taken out from the cassette 24 by the transport plate 26.
Is adsorbed, then raised and then swung, and the reactor R1
The wafer W is loaded on the susceptor 35 in the reaction furnace 11. In this way, after placing a predetermined number of wafers W on the susceptor 35, the lid opening / closing device 12 is operated and the clamp device 49 is operated to seal the reaction furnace 11.

Then, the program with the reservation number No02 is executed. At this time, the reactor R by the program of reservation number No03
Regarding the loading of the wafer W to the 2 side, if the loading start condition of the wafer W to the reaction device R2 side is completed and the loading start condition of the wafer W to the reaction device R2 side is satisfied, it is loaded before the program of the reservation number No02 is started. You can use your time effectively by giving the function to start. After this program ends, the next program is executed, and the last program is executed in sequence.

In the above embodiment, the reservation of the process program and the driving program is input by the keyboard 78. However, for example, the process program shown in FIGS. 6 and 7 and the driving program shown in FIGS. By storing the data in an external storage medium and loading it in the control device 5 or by connecting a host computer to the control device 5, the input operation shown in FIG. Such a reservation may be made possible. Although another input device may be used for input to the external storage medium, the cassette magnetic tape 98 in the above-described embodiment.
You may use what was recorded on.

Further, in the above-mentioned embodiment, the reserved programs are executed continuously, but after the end of each program,
The following program may be executed by manually pressing the start switch.

When the same program is repeatedly reserved for a fixed period or continuously, a specific character, such as “L”, “O”, or “O”, is specified in the designation of the first program.
If "P" is input, the function of executing the same program can be added without the subsequent key operation.

Further, in the above embodiment, the process program and the driving program are stored in the ROM 66 in advance. However, for example, these data may be recorded in an external storage medium such as a card and input to the control device 5. Good.

Further, in the above embodiment, the vapor phase growth apparatus equipped with two reactors has been described, but only one reactor may be used, or an apparatus equipped with three or more reactors may be used.

Further, the present invention is not limited to the vapor phase growth apparatus described in the above embodiments, but can be applied to other manufacturing apparatuses such as an annealing furnace and a diffusion furnace.

〔The invention's effect〕

As described above, according to the present invention, since the reservation function is provided, it is possible to reduce the burden on the operator, reduce defects due to operation mistakes, and contribute to improving work efficiency. In addition, since the reservation can be made including the substrate transfer means, complete automation can be achieved.

[Brief description of drawings]

FIG. 1 shows an embodiment of the present invention. FIG. 1 is a diagram showing the entire system, FIG. 2 is a plan view of an apparatus main body, FIG. 3 is a sectional view of a reaction furnace, and FIG. 4 is a control device. Block diagram showing
FIG. 5 is a diagram showing a process program, and FIGS.
Each of the figures is a diagram showing a screen display example on the CRT. R1, R2 ... Reactor, 2 ... Heating means, 3 ... Gas supply means, 4 ... Substrate transfer means, 5 ... Control device, 11
...... Reactor, 66 ₁ ...... First memory area, 66 ₂ ......
Second memory area, 98 ... Cassette magnetic tape as third memory area.

Claims (4)

[Claims] 1. A reaction furnace for semiconductor substrates, a heating means for heating a substrate in the reaction furnace, a gas supply means for supplying a gas necessary for a reaction in the reaction furnace, and a substrate for the reaction furnace. And a controller for controlling the heating means, the gas supply means, and the substrate transfer means, wherein the controller executes processing in the reaction furnace. A first memory area for storing a process program consisting of a series of process program units including information relating to time, gas used, its flow rate, furnace temperature, etc .; and a drive program for driving the substrate transfer means. A second memory area to be stored, and an arbitrary program is read from at least one of the first and second memory areas, and this program is modified. Modifying means for modifying in accordance with the input, a third memory area for storing the modified program, and reservation means for designating the execution order of any program in the first, second and third memory areas, And a means for executing the program designated by the reservation means in a designated order. 2. The claim 1 according to claim 1, wherein the reservation means is capable of designating an execution order of programs according to a process program name and / or a driving program name recorded in an external storage medium. A semiconductor manufacturing apparatus characterized by: 3. The reserving means according to claim 1 or 2, wherein the reserving means can repetitively specify an arbitrary program so that the program can be reserved for a fixed period or continuously. Semiconductor manufacturing equipment characterized by the fact that 4. The program according to any one of claims 1 to 3, wherein the program whose execution order is designated by the reservation means is stored in the third memory area. A semiconductor manufacturing apparatus characterized by: